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1. 发明公开

US20240321577A1 METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR EVALUATING METAL OXIDE FILM 审中-公开
公开(公告)号：US20240321577A1
公开(公告)日：2024-09-26
申请号：US18668768
申请日：2024-05-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Toshimitsu OBONAI , Yasuharu HOSAKA , Kenichi OKAZAKI , Masahiro TAKAHASHI , Tomonori NAKAYAMA , Tomosato KANAGAWA , Shunpei YAMAZAKI
IPC分类号： H01L21/02 , C23C14/00 , C23C14/08 , C23C14/34 , H01L21/66
CPC分类号： H01L21/02554 , C23C14/081 , C23C14/086 , C23C14/087 , C23C14/34 , H01L21/02488 , H01L21/02565 , H01L21/02595 , H01L21/02609 , H01L21/02631 , H01L22/12 , C23C14/0036 , C23C14/08
摘要： A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

2. 发明公开

US20240306410A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20240306410A1
公开(公告)日：2024-09-12
申请号：US18663359
申请日：2024-05-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shingo EGUCHI , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC分类号： H10K50/11 , H01L27/12 , H01L29/786 , H10K59/121 , H10K59/126 , H10K59/131 , H10K77/10
CPC分类号： H10K50/11 , H01L27/12 , H01L27/1225 , H10K59/1213 , H10K59/126 , H10K59/131 , H10K77/111 , H01L27/124 , H01L29/78678 , H01L29/7869
摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

3. 发明公开

US20240276789A1 DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240276789A1
公开(公告)日：2024-08-15
申请号：US18567650
申请日：2022-06-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kenichi OKAZAKI , Daiki NAKAMURA , Nozomu SUGISAWA
IPC分类号： H10K59/122 , H10K59/80
CPC分类号： H10K59/122 , H10K59/80521
摘要： A high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device positioned next to the first light-emitting device, a third light-emitting device positioned next to the second light-emitting device, a first insulating layer, and a second insulating layer. The first insulating layer includes a first region between the first light-emitting device and the second light-emitting device and a second region between the second light-emitting device and the third light-emitting device. The second insulating layer includes a region positioned over a lower electrode of the third light-emitting device. A thickness of a third organic compound layer of the third light-emitting device is different from a thickness of a first organic compound layer of the first light-emitting device. The thickness of the third organic compound layer of the third light-emitting device is different from a thickness of a second organic compound layer of the second light-emitting device. In a cross-sectional view, the first insulating layer is provided so that a height from a bottom surface of the lower electrode of the third light-emitting device is equal to a height from a bottom surface of a lower electrode of the second light-emitting device.

4. 发明公开

US20240268180A1 DISPLAY APPARATUS, DISPLAY MODULE, ELECTRONIC DEVICE, AND FABRICATION METHOD OF DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240268180A1
公开(公告)日：2024-08-08
申请号：US18566682
申请日：2022-05-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takayuki IKEDA , Kenichi OKAZAKI , Yoshiaki OIKAWA , Natsuko TAKASE , Kensuke YOSHIZUMI
IPC分类号： H10K59/38 , H10K50/13 , H10K50/19 , H10K71/60
CPC分类号： H10K59/38 , H10K50/13 , H10K50/19 , H10K71/60
摘要： A display apparatus with high resolution or high definition is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first EL layer, and a common electrode that are stacked in this order. The second light-emitting device includes a second pixel electrode, a second EL layer, and the common electrode that are stacked in this order. The first coloring layer overlaps with the first light-emitting device. The second coloring layer transmitting light of a color different from a color of light transmitted by the first coloring layer overlaps with the second light-emitting device. The first EL layer and the second EL layer have the same structure and are separated from each other. An end portion of the first EL layer is positioned over the first pixel electrode. An end portion of the second EL layer is positioned over the second pixel electrode. The first insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first EL layer, and the second EL layer. The common electrode is positioned over the first insulating layer.

5. 发明公开

US20240192558A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20240192558A1
公开(公告)日：2024-06-13
申请号：US18527464
申请日：2023-12-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136277 , G02F1/134372 , G02F2202/02 , G02F2202/10
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

6. 发明公开

US20240188404A1 Display Apparatus 审中-公开
公开(公告)号：US20240188404A1
公开(公告)日：2024-06-06
申请号：US18285529
申请日：2022-03-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kenichi OKAZAKI , Koji KUSUNOKI , Hideaki KUWABARA , Yoshiaki OIKAWA
IPC分类号： H10K59/95 , H10K102/00
CPC分类号： H10K59/95 , H10K2102/311
摘要： A display apparatus with a novel structure is provided. The display apparatus includes a display surface, a flexible non-rectangular substrate over which part of the display surface is formed, and a light-emitting device formed over the flexible substrate. The light-emitting device includes pixel regions formed in a matrix. The display surface has a convex or concave region when part of the flexible non-rectangular substrate is bent. A novel light-emitting apparatus, a novel display apparatus, a novel input/output apparatus, or a novel semiconductor apparatus can be achieved. The display apparatus enables the degree of design flexibility of a display apparatus to be increased and design of the display apparatus to be improved.

7. 发明公开

US20240164175A1 DISPLAY APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240164175A1
公开(公告)日：2024-05-16
申请号：US18284612
申请日：2022-04-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Kenichi OKAZAKI , Daisuke KUBOTA
IPC分类号： H10K59/65 , H10K50/19 , H10K71/16 , H10K71/20 , H10K71/60
CPC分类号： H10K59/65 , H10K50/19 , H10K71/166 , H10K71/231 , H10K71/60
摘要： A display apparatus having an image capturing function is provided. A display apparatus or an imaging device with a high aperture ratio is provided. The display apparatus includes a first light-emitting element and a light-receiving element. The first light-emitting element is formed by stacking a first pixel electrode, a first organic layer, and a common electrode in this order. The light-receiving element is formed by stacking a second pixel electrode, a second organic layer, and the common electrode in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and contains the same material as the first organic layer. The second layer overlaps with the first organic layer and contains the same material as the second organic layer. In the region between the first light-emitting element and the light-receiving element, an end portion of the first organic layer and an end portion of the first layer face each other and an end portion of the second organic layer and an end portion of the second layer face each other.

8. 发明公开

US20240164169A1 DISPLAY APPARATUS, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240164169A1
公开(公告)日：2024-05-16
申请号：US18281329
申请日：2022-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kenichi OKAZAKI , Daiki NAKAMURA , Rai SATO
IPC分类号： H10K59/38 , H04R1/22 , H10K50/15 , H10K50/16 , H10K50/17 , H10K59/12 , H10K59/131 , H10K59/65 , H10K71/20 , H10K71/60
CPC分类号： H10K59/38 , H04R1/222 , H10K50/15 , H10K50/16 , H10K50/171 , H10K59/1201 , H10K59/131 , H10K59/65 , H10K71/20 , H10K71/60 , H04R2499/15
摘要： A higher-definition or higher-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. The first insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The first coloring layer is placed to overlap with the first light-emitting device. The second coloring layer is placed to overlap with the second light-emitting device. The first light-emitting device and the second light-emitting device have a function of emitting white light. The first coloring layer and the second coloring layer have a function of transmitting visible light of different colors.

9. 发明公开

US20240164166A1 DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240164166A1
公开(公告)日：2024-05-16
申请号：US18279925
申请日：2022-02-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Daisuke KUBOTA , Taisuke KAMADA , Akio YAMASHITA , Kenichi OKAZAKI , Koji KUSUNOKI , Tomoaki ATSUMI
IPC分类号： H10K59/35 , G09G3/3225 , H10K39/34
CPC分类号： H10K59/353 , G09G3/3225 , H10K39/34 , G09G2300/0452 , G09G2300/0842 , G09G2310/08
摘要： A semiconductor device having a light detection function and including a high-resolution display portion is provided. The semiconductor device is a display apparatus including a light-emitting device, a light-receiving device, and a substrate. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode stacked in this order over the substrate. The light-receiving device includes a third electrode, an active layer, a first hole-transport layer, the electron-injection layer, and the second electrode stacked in this order over the substrate. The first electrode is supplied with a first potential. The second electrode is preferably supplied with a second potential lower than the first potential. The third electrode is preferably supplied with a third potential higher than the second potential.

10. 发明公开

US20240154041A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：US20240154041A1
公开(公告)日：2024-05-09
申请号：US18542870
申请日：2023-12-18
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA , Kenichi OKAZAKI , Masami JINTYOU
IPC分类号： H01L29/786 , H01L21/02 , H01L21/425 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L21/425 , H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78696 , H01L21/473
摘要： A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

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