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1. 发明申请

US20170250217A1 METHOD OF FORMING A SHALLOW PINNED PHOTODIODE 审中-公开
公开(公告)号：US20170250217A1
公开(公告)日：2017-08-31
申请号：US15595356
申请日：2017-05-15
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Eric G. STEVENS
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14643 , H01L21/2255 , H01L27/14603 , H01L27/1461 , H01L27/14616 , H01L27/14689 , H01L27/14806 , H01L27/14812 , H01L27/14831
摘要： An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning layer for the photodiode may be formed by implanting dopants of a second type through the same one or more dielectric layers. The pinning layer may be formed over a photodiode region of the substrate. The concentration of dopants of the second type may have a maximum value in dielectric layers over the photodiode that exceeds the concentration of dopants of the second type in the substrate below. The photodiode and pinning layer may both be formed by implanting ions of the first and second type respectively through a dielectric layer formed after etching away a portion of another dielectric layer, having a different thickness, and having different optical transmission properties than the another dielectric layer.

2. 发明申请

US20180048835A1 METHODS AND APPARATUS FOR A CCD IMAGE SENSOR 审中-公开
公开(公告)号：US20180048835A1
公开(公告)日：2018-02-15
申请号：US15235876
申请日：2016-08-12
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Shen WANG , Eric J. MEISENZAHL , Eric G. STEVENS
IPC分类号： H04N5/359 , H04N5/372 , H01L27/148
CPC分类号： H04N5/3591 , H01L27/14818 , H01L27/14887 , H04N5/372
摘要： Various embodiments of the present technology may comprise methods and apparatus for a CCD image sensor. The image sensor may comprise a center channel disposed along a horizontal center line of the pixel array for collecting and transferring charge. The center channel is electrically coupled to a lateral overflow drain. In various embodiments, the image sensor may comprise a light shield under a gap between neighboring microlenses, such as a gap along the center line, to block light, such as to maintain a uniform, spatial sampling pattern across the device. In various embodiments, the image sensor may comprise a barrier region disposed between the center channel and the lateral overflow drain, for example to prevent charge from the lateral overflow drain being injected back into the center channel and adjacent pixels.

3. 发明申请

US20160293660A1 METHOD OF FORMING A SHALLOW PINNED PHOTODIODE 有权
标题翻译：形成一个小的PINNED光电子的方法
公开(公告)号：US20160293660A1
公开(公告)日：2016-10-06
申请号：US14675363
申请日：2015-03-31
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Eric G. STEVENS
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L21/2255 , H01L27/14603 , H01L27/1461 , H01L27/14616 , H01L27/14689 , H01L27/14806 , H01L27/14812 , H01L27/14831
摘要： An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning layer for the photodiode may be formed by implanting dopants of a second type through the same one or more dielectric layers. The pinning layer may be formed over a photodiode region of the substrate. The concentration of dopants of the second type may have a maximum value in dielectric layers over the photodiode that exceeds the concentration of dopants of the second type in the substrate below. The photodiode and pinning layer may both be formed by implanting ions of the first and second type respectively through a dielectric layer formed after etching away a portion of another dielectric layer, having a different thickness, and having different optical transmission properties than the another dielectric layer.
摘要翻译：具有钉扎光电二极管的图像传感器包括通过在衬底上形成的一个或多个介电层注入第一类型的掺杂剂而形成在衬底中的光电二极管。可以通过将相同的一个或多个电介质层注入第二类型的掺杂剂来形成用于光电二极管的钉扎层。钉扎层可以形成在衬底的光电二极管区域上。第二类型的掺杂剂的浓度可以在光电二极管上的电介质层中具有超过下面的衬底中的第二类型的掺杂剂的浓度的最大值。光电二极管和钉扎层可以分别通过将蚀刻掉具有不同厚度的另一个介电层的一部分形成的电介质层分别注入第一和第二类型的离子而形成，并具有不同于另一个介电层。

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