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1. 发明申请

US20140217594A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140217594A1
公开(公告)日：2014-08-07
申请号：US14172229
申请日：2014-02-04
申请人： Seiko Instruments Inc.
发明人： Keisuke UEMURA , Jun OSANAI
IPC分类号： H01L23/00 , H01L23/48
CPC分类号： H01L23/564 , H01L23/293 , H01L23/481 , H01L24/05 , H01L2224/02163 , H01L2224/02233 , H01L2224/02255 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2924/00014
摘要： Provided is a semiconductor device configured to prevent a penetration of moisture into an internal circuit. The moisture from a bonding pad to the internal circuit is blocked by providing an underlying polysilicon film (10) formed as a lower layer of a bonding pad, a bonding pad (1) formed above the underlying polysilicon film (10) through intermediation of an inter-layer insulation film (21), and an outer circumferential interconnecting line (3) formed so as to surround an outer side of the bonding pad 1, and by connecting the outer circumferential interconnecting line (3) and the underlying polysilicon film (10) with a continuous outer circumferential contact.
摘要翻译：提供了一种被配置为防止湿气渗入内部电路的半导体器件。通过提供形成为焊盘的下层的下面的多晶硅膜（10），通过形成在下面的多晶硅膜（10）上方的接合焊盘（1），从而将焊接焊盘到内部电路的水分阻挡层间绝缘膜（21）和形成为包围接合焊盘1的外侧的外周互连线（3），并且通过连接外周互连线（3）和下面的多晶硅膜（10））具有连续的外圆周接触。

2. 发明申请

US20130207636A1 REFERENCE VOLTAGE GENERATOR 有权
标题翻译：参考电压发生器
公开(公告)号：US20130207636A1
公开(公告)日：2013-08-15
申请号：US13755545
申请日：2013-01-31
申请人： SEIKO INSTRUMENTS INC.
发明人： Hideo YOSHINO , Jun OSANAI , Masayuki HASHITANI , Yoshitsugu HIROSE
IPC分类号： G05F3/02
CPC分类号： G06F3/02 , G05F3/02 , G05F3/24 , H01L27/088 , H01L27/0883
摘要： Provided is a reference voltage generator having flat temperature characteristics. The reference voltage generator includes: a depletion mode MOS transistor (10) of a first conductivity type, which is connected to function as a current source and allows a constant current to flow; and an enhancement mode MOS transistor (20) of the first conductivity type, which has a diode connection, has a mobility substantially equal to a mobility of the depletion mode MOS transistor (10), and generates a reference voltage (VREF) based on the constant current. The depletion mode NMOS transistor (10) and the enhancement mode NMOS transistor (20) have substantially equal mobilities, and thus have substantially equal temperature characteristics so that the temperature characteristics of the reference voltage (VREF) become flat.
摘要翻译：提供具有平坦温度特性的参考电压发生器。参考电压发生器包括：第一导电类型的耗尽型MOS晶体管（10），其连接用作电流源并允许恒定电流流动; 和具有二极管连接的第一导电类型的增强型MOS晶体管（20）的迁移率基本上等于耗尽型MOS晶体管（10）的迁移率，并且基于恒流。耗尽型NMOS晶体管（10）和增强型NMOS晶体管（20）具有基本相等的迁移率，因此具有基本相等的温度特性，使得参考电压（VREF）的温度特性变得平坦。

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