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1. 发明授权

US09111627B2 Fast-reading NAND flash memory 有权
标题翻译：快速读取NAND闪存
公开(公告)号：US09111627B2
公开(公告)日：2015-08-18
申请号：US14631027
申请日：2015-02-25
申请人： SanDisk Technologies Inc.
发明人： Yacov Duzly , Alon Marcu , Yuval Kenan , Yan Li , Man Mui , Seungpil Lee
IPC分类号： G11C11/34 , G11C16/26 , G11C16/08 , G11C11/56 , G11C16/04
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10
摘要： In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old selected word line from a discrimination voltage to a read voltage and transitioning the new selected word line from the read voltage to a discrimination voltage.
摘要翻译：在闪速存储器中，通过在多页读取期间保持全局字线电压，并且通过同时将旧的所选字线从识别电压转换到读取电压并转换新的选择字，快速连续读取平面中的两页或多页从读取电压到鉴别电压。

2. 发明申请

US20150170752A1 FAST-READING NAND FLASH MEMORY 有权
标题翻译：快速读取NAND FLASH存储器
公开(公告)号：US20150170752A1
公开(公告)日：2015-06-18
申请号：US14631027
申请日：2015-02-25
申请人： SanDisk Technologies Inc.
发明人： Yacov Duzly , Alon Marcu , Yuval Kenan , Yan Li , Man Mui , Seungpil Lee
IPC分类号： G11C16/26 , G11C16/08
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10
摘要： In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old selected word line from a discrimination voltage to a read voltage and transitioning the new selected word line from the read voltage to a discrimination voltage.
摘要翻译：在闪速存储器中，通过在多页读取期间保持全局字线电压，并且通过同时将旧的所选字线从识别电压转换到读取电压并转换新的选择字，快速连续读取平面中的两页或多页从读取电压到鉴别电压。

3. 发明授权

US08995195B2 Fast-reading NAND flash memory 有权
公开(公告)号：US08995195B2
公开(公告)日：2015-03-31
申请号：US13765349
申请日：2013-02-12
申请人： SanDisk Technologies Inc.
发明人： Yacov Duzly , Alon Marcu , Yuval Kenan , Yan Li , Man Lung Mui , Seungpil Lee
IPC分类号： G11C11/34 , G11C16/10 , G11C11/56 , G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10
摘要： In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old selected word line from a discrimination voltage to a read voltage and transitioning the new selected word line from the read voltage to a discrimination voltage.

4. 发明申请

US20140226402A1 Fast-Reading NAND Flash Memory 有权
标题翻译：快速读取NAND闪存
公开(公告)号：US20140226402A1
公开(公告)日：2014-08-14
申请号：US13765349
申请日：2013-02-12
申请人： SANDISK TECHNOLOGIES INC.
发明人： Yacov Duzly , Alon Marcu , Yuval Kenan , Yan Li , Man Lung Mui , Seungpil Lee
IPC分类号： G11C16/10
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10
摘要： In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old selected word line from a discrimination voltage to a read voltage and transitioning the new selected word line from the read voltage to a discrimination voltage.
摘要翻译：在闪速存储器中，通过在多页读取期间保持全局字线电压，并且通过同时将旧的所选字线从识别电压转换到读取电压并转换新的选择字，快速连续读取平面中的两页或多页从读取电压到鉴别电压。

5. 发明申请

US20170068451A1 Storage Device and Method for Detecting and Handling Burst Operations 审中-公开
标题翻译：用于检测和处理突发操作的存储设备和方法
公开(公告)号：US20170068451A1
公开(公告)日：2017-03-09
申请号：US14871575
申请日：2015-09-30
申请人： SanDisk Technologies Inc.
发明人： Yuval Kenan , Micha Yonin
IPC分类号： G06F3/06
CPC分类号： G06F3/0613 , G06F3/0659 , G06F3/0679
摘要： A storage device and method for detecting and handling burst operations are provided. In one embodiment, a method for operating a storage device in burst mode is provided. The storage device senses a change in behavior of a host in communication with the storage device, determines whether the sensed change in behavior of the host is indicative of the host's need for the storage device to operate in burst mode by comparing the sensed change in behavior with prior changes in behavior that triggered prior burst modes in the storage device, and in response to determining that the sensed change in behavior of the host is indicative of the host's need for the storage device to operate in burst mode, operates the storage device in burst mode. Other embodiments are provided.
摘要翻译：提供了一种用于检测和处理突发操作的存储装置和方法。在一个实施例中，提供了以突发模式操作存储设备的方法。存储设备感测与存储设备通信的主机的行为变化，确定所感测到的主机行为的改变是否表示主机对于存储设备以突发模式操作的需要，通过比较感测的行为变化在存储设备中触发先前突发模式的行为的先前变化，并且响应于确定所感测到的主机行为的改变指示主机对存储设备在突发模式下操作的需要，将存储设备操作在突发模式。提供其他实施例。

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