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1. 发明申请

US20160225815A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20160225815A1
公开(公告)日：2016-08-04
申请号：US14973855
申请日：2015-12-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Changyong UM , Youngwoo JUNG , Jungchak AHN
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14818 , H01L27/14609 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/1464
摘要： An image sensor includes a substrate with a unit pixel defined by a first separation pattern, a photoelectric conversion part in the substrate, a photocharge storage in the substrate, the photocharge storage being adjacent to the photoelectric conversion part, a second separation pattern between the photoelectric conversion part and the photocharge storage, a shielding part on a bottom surface of the substrate to cover the photocharge storage, the shielding part including a first protrusion extending into the substrate and toward the first separation pattern, and an extension extending from the first protrusion to cover the bottom surface of the substrate; and an anti-reflection layer between the shielding part and the substrate, the anti-reflection layer having an overhang structure between the first protrusion and the extension.
摘要翻译：图像传感器包括具有由第一分离图案限定的单位像素的基板，基板中的光电转换部，基板中的光电荷存储部，与光电转换部相邻的光电荷存储部，光电转换部之间的第二分离图案转换部分和光电荷存储器，覆盖光电荷存储器的基板的底表面上的屏蔽部分，所述屏蔽部分包括延伸到基板中并朝向第一分离图案的第一突起，以及从第一突起到第覆盖基板的底面; 以及在所述屏蔽部和所述基板之间的防反射层，所述防反射层在所述第一突起和所述延伸部之间具有突出结构。

2. 发明申请

US20170040365A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS 审中-公开
标题翻译：补充金属氧化物半导体图像传感器
公开(公告)号：US20170040365A1
公开(公告)日：2017-02-09
申请号：US15298204
申请日：2016-10-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungwook LEE , Jungchak AHN , Youngwoo JUNG
IPC分类号： H01L27/146 , H01L29/423
CPC分类号： H01L27/14614 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14689 , H01L29/4236
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.
摘要翻译：提供了互补的金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有第一导电类型并具有第一和第二表面的外延层，从第一表面延伸到第二表面以限定第一和第二像素区域的第一器件隔离层，第二和第二表面的阱杂质层导电类型，形成在第一表面附近并形成在第一和第二像素区域中的每一个的外延层中，以及第二器件隔离层，形成在第一和第二像素区域中的每一个中的阱杂质层中，以限定第一和第二像素区域在第一和第二像素区域中的每一个中彼此间隔开的有源部分。

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