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1. 发明申请

US20220021831A1 DEPTH PIXEL HAVING MULTI-TAP STRUCTURE AND TIME-OF-FLIGHT SENSOR INCLUDING THE SAME 有权
公开(公告)号：US20220021831A1
公开(公告)日：2022-01-20
申请号：US17173290
申请日：2021-02-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号： H04N5/369 , H04N5/341 , G01S17/894 , G01S7/4863 , G01S7/4865
摘要： A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

2. 发明授权

US11627266B2 Depth pixel having multi-tap structure and time-of-flight sensor including the same 有权
公开(公告)号：US11627266B2
公开(公告)日：2023-04-11
申请号：US17173290
申请日：2021-02-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号： H04N5/369 , H04N5/341 , G01S7/4865 , G01S7/4863 , G01S17/894
摘要： A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

3. 发明授权

US11265496B2 Image sensor including pixels mirror symmetric with each other 有权
公开(公告)号：US11265496B2
公开(公告)日：2022-03-01
申请号：US17019954
申请日：2020-09-14
申请人： Samsung Electronics Co., Ltd.
发明人： Munhwan Kim , Jooyeong Gong , Youngsun Oh , Yujung Choi , Hana Choi
IPC分类号： H04N5/374 , H04N9/04 , H01L27/146 , H04N5/369 , H04N5/378
摘要： An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.

4. 发明授权

US11665443B2 Image sensor 有权
公开(公告)号：US11665443B2
公开(公告)日：2023-05-30
申请号：US17674045
申请日：2022-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Youngsun Oh , Hyungjin Bae , Moosup Lim
IPC分类号： H04N25/585 , H04N25/75 , H04N25/77
CPC分类号： H04N25/585 , H04N25/75 , H04N25/77
摘要： An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

5. 发明授权

US11552122B2 Image sensor and operating method 有权
公开(公告)号：US11552122B2
公开(公告)日：2023-01-10
申请号：US16865618
申请日：2020-05-04
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Munhwan Kim , Youngsun Oh
IPC分类号： H01L27/146 , H04N5/374 , H04N5/355 , H04N5/378 , H04N5/3745
摘要： An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.

6. 发明授权

US11812175B2 Image sensor and method of operating the same 有权
公开(公告)号：US11812175B2
公开(公告)日：2023-11-07
申请号：US17673390
申请日：2022-02-16
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Munhwan Kim , Youngsun Oh , Jongyoon Shin , Honghyun Jeon , Hana Choi
IPC分类号： H04N25/766 , H01L27/146 , H04N25/11 , H04N25/75 , H04N25/79 , H04N25/778
CPC分类号： H04N25/766 , H01L27/1463 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H04N25/11 , H04N25/75 , H04N25/778 , H04N25/79
摘要： An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

7. 发明申请

US20220360731A1 IMAGE SENSOR AND METHOD OF OPERATING THE SAME 有权
公开(公告)号：US20220360731A1
公开(公告)日：2022-11-10
申请号：US17673390
申请日：2022-02-16
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Munhwan Kim , Youngsun Oh , Jongyoon Shin , Honghyun Jeon , Hana Choi
IPC分类号： H04N5/374 , H01L27/146 , H04N5/378 , H04N5/369 , H04N9/04 , H04N5/3745
摘要： An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

8. 发明申请

US20220328557A1 IMAGE SENSOR 有权
公开(公告)号：US20220328557A1
公开(公告)日：2022-10-13
申请号：US17533468
申请日：2021-11-23
申请人： Samsung Electronics Co., Ltd.
发明人： Junghoon Park , Hyungjin Bae , Seungho Shin , Youngsun Oh , Moosup Lim
IPC分类号： H01L27/146
摘要： An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

9. 发明授权

US09293494B2 Image sensors 有权
标题翻译：图像传感器
公开(公告)号：US09293494B2
公开(公告)日：2016-03-22
申请号：US14675915
申请日：2015-04-01
申请人： Samsung Electronics Co., Ltd.
发明人： Jungchak Ahn , Youngsun Oh , Kyungho Lee , Dongyoung Jang
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14612 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： An image sensor includes a substrate including a pixel region and a peripheral circuit region, and a first device isolation layer disposed in the substrate to define a plurality of unit pixels that are adjacent to each other in a first direction in the pixel region. Each of the plurality of unit pixels includes at least one light sensing element disposed in the substrate. The image sensor includes an interlayer insulating structure on the substrate, and a first blocking structure disposed on the first device isolation layer and penetrating the interlayer insulating structure. The first blocking structure is disposed between the plurality of unit pixels when viewed from a plan view. The first blocking structure extends in a second direction intersecting the first direction when viewed from a plan view.
摘要翻译：图像传感器包括：基板，包括像素区域和外围电路区域;以及第一器件隔离层，设置在所述基板中，以限定像素区域中沿着第一方向彼此相邻的多个单位像素。多个单位像素中的每一个包括设置在基板中的至少一个感光元件。图像传感器包括在基板上的层间绝缘结构，以及设置在第一器件隔离层上并穿透层间绝缘结构的第一阻挡结构。当从平面图观察时，第一阻挡结构设置在多个单位像素之间。当从俯视图观察时，第一阻挡结构沿与第一方向交叉的第二方向延伸。

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