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1. 发明授权

US11365348B2 Quantum dot, production method thereof, and electronic device including the same 有权
公开(公告)号：US11365348B2
公开(公告)日：2022-06-21
申请号：US16245653
申请日：2019-01-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Young Seok Park , Eun Joo Jang , Shin Ae Jun , Nayoun Won , Jooyeon Ahn , Sung Woo Kim
IPC分类号： C09K11/70 , C09K11/02 , H01L27/32 , G02F1/13357 , F21V8/00 , C09K11/88 , H05B33/14
摘要： A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.

2. 发明申请

US20190153317A1 SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME 审中-公开
公开(公告)号：US20190153317A1
公开(公告)日：2019-05-23
申请号：US16196117
申请日：2018-11-20
申请人： Samsung Electronics Co., Ltd.
发明人： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC分类号： C09K11/88 , C09K11/56
摘要： A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

3. 发明授权

US10082303B2 Appliance for dehumidification and multi-function appliance for dehumidificaton or humidification 有权
公开(公告)号：US10082303B2
公开(公告)日：2018-09-25
申请号：US14938147
申请日：2015-11-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Heung Seob Choi , Seong Ryeol Myeong , Jun Hyoun Kwon , Sung Woo Kim , Jung Ho Kim , Euy Sung Chu
IPC分类号： F25D21/14 , F24F3/14 , B01D53/26 , B01D53/04 , F24F6/00
CPC分类号： F24F3/14 , B01D53/0438 , B01D53/261 , B01D53/265 , B01D2257/80 , F24F3/1411 , F24F13/222 , F24F2003/1446 , F24F2006/008
摘要： An appliance for dehumidification, with a body having an inflow unit and an outflow unit; a heat-exchanging apparatus to condense vapor in the air; a fan to forcedly move the air; a tray to collect condensation water descending from a cooling apparatus; a water container detachably provided at an upper portion of the body to store the condensation water; a pump to pump the condensation water from the tray to the water container; and a drain pipe to guide the condensation water from the pump to the water container. The water container may be easily separated from the appliance to empty the water container when the water container is full, and then the water container may be easily mounted again.

4. 发明申请

US20150060032A1 HEAT EXCHANGER AND VENTILATOR HAVING THE SAME 有权
标题翻译：换热器和通风机
公开(公告)号：US20150060032A1
公开(公告)日：2015-03-05
申请号：US14540435
申请日：2014-11-13
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Chul KWON , Sung Woo Kim , Euy Sung Chu , Jee Yong Kim
IPC分类号： F24F12/00 , F28D9/00
CPC分类号： F24F12/006 , F28D9/00 , F28D9/0062 , F28F9/001 , Y02B30/16 , Y02B30/563
摘要： A heat exchanger usable with a ventilator, the heat exchanger having an improved structure so that air passing through the heat exchanger may be prevented from leaking. The heat exchanger of the general inventive concept includes a heat-exchanging element having a plurality of liners stacked in a uniformly spaced state and a plurality of spacers disposed between the liners to define air passages, and corner guides respectively coupled to corners of the heat-exchanging element. Each of the corner guides includes a guide channel forming a space to receive the corner of the heat-exchanging element so that the corner guides securely come into close contact with the heat-exchanging element, and to minimize a loosening of the corner guide due to an adhesive applied between the heat-exchanging element and the corner guide.
摘要翻译：一种与呼吸机一起使用的热交换器，该热交换器具有改进的结构，使得可以防止通过热交换器的空气泄漏。总体发明构思的热交换器包括具有以均匀间隔的状态堆叠的多个衬垫的热交换元件和设置在衬套之间的多个间隔件以限定空气通道，以及分别连接到热交换器的角部的拐角导向器，交换元素每个拐角引导件包括形成用于接收热交换元件的角部的空间的引导通道，使得角部引导件牢固地与热交换元件紧密接触，并且最小化角引导件的松动，由于施加在热交换元件和拐角引导件之间的粘合剂。

5. 发明授权

US11566345B2 Cadmium-free semiconductor nanocrystal particles having high quantum efficiency, production methods thereof, and devices including the same 有权
公开(公告)号：US11566345B2
公开(公告)日：2023-01-31
申请号：US16281232
申请日：2019-02-21
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC分类号： B32B5/16 , B05D7/00 , B82Y20/00 , C30B29/48 , C01G9/08 , H01L51/50 , H01L33/28 , C09K11/02 , C09K11/56 , C09K11/88 , H01L33/06 , B82Y40/00
摘要： A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

6. 发明授权

US11563143B2 Semiconductor nanocrystal particle, method for preparing same, and device including same 有权
公开(公告)号：US11563143B2
公开(公告)日：2023-01-24
申请号：US16998262
申请日：2020-08-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
IPC分类号： H01L33/06 , H01L33/20 , H01L33/26 , C09K11/88 , C01B19/04
摘要： A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

7. 发明授权

US10954440B2 Quantum dots and devices including the same 有权
公开(公告)号：US10954440B2
公开(公告)日：2021-03-23
申请号：US16298108
申请日：2019-03-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
IPC分类号： H01L51/50 , C09K11/88 , C09K11/02 , H05B33/14 , B82Y20/00 , B82Y40/00
摘要： A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

8. 发明授权

US10818858B2 Electroluminescent device and display device comprising the same 有权
公开(公告)号：US10818858B2
公开(公告)日：2020-10-27
申请号：US16058176
申请日：2018-08-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Tae Ho Kim , Chan Su Kim , Kun Su Park , Eun Joo Jang , Sung Woo Kim , Hongkyu Seo
IPC分类号： H01L29/06 , H01L51/50 , H01L51/56 , H01L51/52 , H01L51/00
摘要： An electroluminescent device and a display device including the same are disclosed. The electroluminescent device includes a first electrode, an electron transport layer disposed on the first electrode and including inorganic oxide particles, a self-assembled monolayer disposed on the electron transport layer, an emission layer disposed on the self-assembled monolayer and including light emitting particles, a hole transport layer disposed on the emission layer, and a second electrode disposed on the hole transport layer.

9. 发明授权

US10396306B2 Electroluminescent device capable of improving luminous efficiency by preventing a leakage current and improving electron transport properties and a display device including the same 有权
公开(公告)号：US10396306B2
公开(公告)日：2019-08-27
申请号：US15970252
申请日：2018-05-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Sung Woo Kim , Tae Ho Kim , Kun Su Park , Chan Su Kim , Eun Joo Jang
IPC分类号： H01L51/54 , H01L51/50 , G09G3/3208 , H05B33/20 , H01L51/52
摘要： An electroluminescent device, a method of manufacturing the same, and a display device including the same are disclosed. The electroluminescent device electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer and including at least two light emitting particles; a first electron transport layer disposed on the emission layer and including at least two inorganic-organic composite particles; a second electron transport layer disposed on the first electron transport layer and including at least two inorganic oxide particles; and a second electrode disposed on the second electron transport layer, wherein the first electron transport layer has a lower work function than the second electron transport layer.

10. 发明授权

US11566176B2 Semiconductor nanocrystal particles and devices including the same 有权
公开(公告)号：US11566176B2
公开(公告)日：2023-01-31
申请号：US16851495
申请日：2020-04-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jeong Hee Lee , Hyo Sook Jang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang , Yong Seok Han
IPC分类号： C09K11/88 , H01L33/00 , H01L33/28 , H01L33/06
摘要： A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.

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