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1. 发明授权

US09245995B2 Semiconductor device having power metal-oxide-semiconductor transistor 有权
标题翻译：具有功率金属氧化物半导体晶体管的半导体器件
公开(公告)号：US09245995B2
公开(公告)日：2016-01-26
申请号：US13921412
申请日：2013-06-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jae-june Jang , Kyu-heon Cho , Min-hwan Kim , Dong-eun Jang , Hoon Chang
IPC分类号： H01L29/78 , H01L29/40 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/49 , H01L29/08
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0878 , H01L29/402 , H01L29/4238 , H01L29/4983 , H01L29/66681
摘要： A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.
摘要翻译：半导体器件包括：包含半导体衬底的功率金属氧化物半导体（MOS）晶体管，半导体衬底上的杂质区域，具有第一导电性的杂质区域，杂质区域中的漂移区域，具有第一电导率，与漂移区相邻的杂质区域中的体区，具有不同于第一导电性的第二电导率的体区，漂移区上的漏极延伸绝缘层，顺序地层叠在栅极绝缘层上的栅电极所述体区的一部分和所述漂移区的一部分，所述漏极延伸绝缘层上的漏极延伸电极，与所述体区的相反侧的所述漂移区的漏极区域，所述漏极区具有所述第一导电性，以及源区域，源区域具有第二导电性。

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