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1. 发明申请

US20210066066A1 SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE 有权
公开(公告)号：US20210066066A1
公开(公告)日：2021-03-04
申请号：US16853796
申请日：2020-04-21
申请人： Samsung Electronics Co., Ltd.
发明人： Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L21/02 , H01L21/768 , H01L21/12 , H01L21/302
摘要： Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

2. 发明申请

US20150044970A1 METHOD AND APPARATUS FOR ESTABLISHING SHORT RANGE COMMUNICATION 有权
标题翻译：建立短距离通信的方法与装置
公开(公告)号：US20150044970A1
公开(公告)日：2015-02-12
申请号：US14453451
申请日：2014-08-06
申请人： Samsung Electronics Co., Ltd.
发明人： Gwang-Ha Park , Do-Hun Kim , Jin-Ho Ahn , Dai-IL Oh , Jae-In Lee , Hyun-Suk Lee
IPC分类号： H04W76/02 , H04B10/11 , H04W4/00
CPC分类号： H04W76/14 , H04B5/00 , H04B10/11 , H04M1/7253 , H04M2250/04 , H04W4/80 , H04W8/005 , H04W76/10 , H04W88/06
摘要： A method for establishing a short range connection includes transmitting a first data to an external device through infrared communication, the first data including information on a short range wireless communication other than the infrared communication, the short range wireless communication being supported by an electronic device, establishing the short range wireless communication with the external device on the basis of the first data, and transmitting a second data to the external device through the short range wireless communication. An electronic device includes at least one processor configured to transmit a first data to an external device through infrared communication, the first data including information on a short range wireless communication other than the infrared communication, the short range wireless communication being supported by an electronic device, establish the short range wireless communication with the external device on the basis of the first data.
摘要翻译：用于建立短距离连接的方法包括：通过红外通信将第一数据发送到外部设备，所述第一数据包括关于红外通信以外的短距离无线通信的信息，所述短距离无线通信由电子设备支持，基于第一数据建立与外部设备的短距离无线通信，并通过短距离无线通信将外部设备发送第二数据。电子设备包括至少一个处理器，其被配置为通过红外通信将第一数据发送到外部设备，所述第一数据包括关于红外通信以外的短距离无线通信的信息，所述短距离无线通信由电子设备支持根据第一个数据建立与外部设备的短距离无线通信。

3. 发明申请

US20150061074A1 MIM Capacitors with Diffusion-Blocking Electrode Structures and Semiconductor Devices Including the Same 有权
标题翻译：具有扩散阻挡电极结构的MIM电容器和包括其的半导体器件
公开(公告)号：US20150061074A1
公开(公告)日：2015-03-05
申请号：US14340923
申请日：2014-07-25
申请人： Samsung ELectronics Co., Ltd.
发明人： Hyun-Suk Lee , Tae-Kyun Kim , Jin-Su Lee , Dong-Kyun Park , Jong-Myeong Lee
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/75 , H01L27/1085 , H01L28/90
摘要： A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.
摘要翻译：半导体器件在衬底上包括MIM电容器。 MIM电容器包括电介质区域和在电介质区域的相对侧上的第一和第二电极。第一电极和第二电极中的至少一个，例如上电极，包括氧离子阻挡材料，例如氧原子，其浓度在远离电介质区域的方向上减小。第一和第二电极中的至少一个可以包括具有第一浓度的氧扩散阻挡材料的第一层和第一层上的第二层，并且具有小于第一浓度的第二浓度的氧扩散阻挡材料。第一和第二电极中的至少一个还可以包括第二层上的第三层，并且具有小于第二浓度的氧扩散阻塞材料的浓度。

4. 发明申请

US20220037325A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220037325A1
公开(公告)日：2022-02-03
申请号：US17220411
申请日：2021-04-01
申请人： Samsung Electronics Co., Ltd.
发明人： Jun Goo Kang , Sang Hyuck Ahn , Sang Yeol Kang , Jin-Su Lee , Hyun-Suk Lee , Gi Hee Cho , Hong Sik Chae
IPC分类号： H01L27/108 , H01L49/02
摘要： A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

5. 发明申请

US20180242349A1 INTERFACE DEVICE AND METHOD IN WIRELESS COMMUNICATION NETWORK 审中-公开
公开(公告)号：US20180242349A1
公开(公告)日：2018-08-23
申请号：US15899870
申请日：2018-02-20
申请人： Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
发明人： Hoon-Dong NOH , Jang-Won Lee , Youn-Sun Kim , Hyun-Suk Lee , Young-Woo Kwak , Seok-Jae Moon
IPC分类号： H04W72/12 , H04W72/10 , H04L29/06
CPC分类号： H04W72/1278 , H04L69/22 , H04W72/10 , H04W88/08
摘要： A signal processing device of a base station being connected to one or more wireless devices of the base station is provided. The signal processing device includes a memory and a processor configured to transmit wireless device setting information to the one or more wireless devices via a front-haul interface during a predetermined time frame, transmit a downlink packet, which is obtained by packetizing downlink baseband data, to the one or more wireless devices via the front-haul interface, receive an uplink packet through the front-haul interface, obtain uplink baseband data and inherent control information by performing uplink packetization on the received uplink packet, and process the uplink baseband data based on analysis of the obtained inherent control information.

6. 发明授权

US09997591B2 Capacitor and a semiconductor device including the same 有权
公开(公告)号：US09997591B2
公开(公告)日：2018-06-12
申请号：US15212299
申请日：2016-07-18
申请人： Samsung Electronics Co., Ltd.
发明人： Jin-su Lee , Gihee Cho , Dongkyun Park , Hyun-Suk Lee , Heesook Park , Jongmyeong Lee
IPC分类号： H01L49/02
CPC分类号： H01L28/75
摘要： A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes a lower electrode, a dielectric layer disposed on the lower electrode, and an upper electrode disposed on the dielectric layer. The upper electrode includes a first electrode on the dielectric layer and a second electrode on the first electrode, such that the first electrode is disposed between the dielectric layer and the second electrode. The first electrode contains metal oxynitride having a formula of MxOyNz, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) is a value in the range from 0.5 to 2.

7. 发明申请

US20220328303A1 SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE 有权
公开(公告)号：US20220328303A1
公开(公告)日：2022-10-13
申请号：US17851244
申请日：2022-06-28
申请人： Samsung Electronics Co., Ltd.
发明人： Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L21/02 , H01L21/302 , H01L21/12 , H01L21/768
摘要： Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

8. 发明授权

US11411075B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US11411075B2
公开(公告)日：2022-08-09
申请号：US17189700
申请日：2021-03-02
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Gihee Cho , Sangyeol Kang , Jungoo Kang , Taekyun Kim , Jiwoon Park , Sanghyuck Ahn , Jin-Su Lee , Hyun-Suk Lee , Hongsik Chae
IPC分类号： H01L49/02 , H01L27/108
摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

9. 发明授权

US09773861B2 Capacitors and semiconductor devices including the same 有权
公开(公告)号：US09773861B2
公开(公告)日：2017-09-26
申请号：US15064253
申请日：2016-03-08
申请人： Samsung Electronics Co., Ltd.
发明人： Hyun-Suk Lee , Jun-Goo Kang
IPC分类号： H01L29/94 , H01L49/02 , H01L27/06 , H01L27/108
CPC分类号： H01L28/75 , H01L27/0629 , H01L27/10852 , H01L28/90
摘要： A capacitor may include a lower electrode structure, a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer. The lower electrode structure may include first to third lower electrodes sequentially stacked, a first oxidation barrier pattern structure between the first lower electrode and the second lower electrode, and a second oxidation barrier pattern structure between the second lower electrode and the third lower electrode. The first oxidation barrier pattern structure may include first and second oxidation barrier patterns sequentially stacked on the first lower electrode, and the second oxidation barrier pattern structure may include third and fourth oxidation barrier patterns sequentially stacked on the second lower electrode.

10. 发明授权

US11342329B2 Semiconductor memory device and method of fabricating the same 有权
公开(公告)号：US11342329B2
公开(公告)日：2022-05-24
申请号：US16903586
申请日：2020-06-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Gihee Cho , Jungoo Kang , Hyun-Suk Lee , Sanghyuck Ahn
IPC分类号： H01L27/108 , H01L49/02 , H01L21/02
摘要： A semiconductor memory device includes a capacitor having a bottom electrode and a top electrode, a dielectric layer between the bottom and top electrodes, and an interface layer between the top electrode and the dielectric layer, the interface layer including a metal oxide and an additional constituent at a grain boundary of the interface layer.

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