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1. 发明授权

US10026473B2 Non-volatile memory device for selectively performing recovery operation and method of operating the same 有权
公开(公告)号：US10026473B2
公开(公告)日：2018-07-17
申请号：US15288758
申请日：2016-10-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyun-Jun Yoon , Jae-Woo Im
IPC分类号： G11C11/56 , G11C16/20 , G11C16/34 , G11C16/04 , G11C7/08 , G11C16/32
摘要： A non-volatile memory device for selectively performing a recovery operation and a method of operating the same are provided. The method of operating a non-volatile memory device includes receiving a first read command, performing a first sensing operation in response to the first read command, and receiving a second read command. The method further includes completing a memory operation corresponding to the first read command without performing a recovery operation when the second read command is received before the first sensing operation is completed, and performing a second sensing operation in response to the second read command.

2. 发明授权

US09177660B2 Method of operating memory device 有权
标题翻译：操作存储设备的方法
公开(公告)号：US09177660B2
公开(公告)日：2015-11-03
申请号：US14069588
申请日：2013-11-01
申请人： Samsung Electronics Co., Ltd
发明人： Hyun-Jun Yoon , Jae-Yong Jeong , Myung-Hoon Choi , Bo-Geun Kim , Ki-Tae Park
IPC分类号： G06F11/10 , G11C16/26 , G11C16/04 , G11C29/00
CPC分类号： G11C16/26 , G06F11/1048 , G06F11/1072 , G11C16/0483 , G11C29/00
摘要： A method of operating a memory device includes changing a first read voltage, which determines a first voltage state or a second voltage state, to a voltage within a first range and determining the voltage as a first select read voltage, and changing a second read voltage, which is used to determine whether the data stored in the memory cells is a third different voltage state or a fourth different voltage state, to a voltage within a second different range and determining the voltage as a second select read voltage. The first voltage state overlaps the second voltage. The third voltage state overlaps the fourth voltage state. A difference between a voltage at an intersection of the third and fourth voltage states and the second read voltage is greater than a difference between a voltage at an intersection of the first and second voltage states and the first read voltage.
摘要翻译：一种操作存储器件的方法包括将确定第一电压状态或第二电压状态的第一读取电压改变为第一范围内的电压并将电压确定为第一选择读取电压，并且改变第二读取电压，其用于确定存储在存储单元中的数据是否是第三不同电压状态或第四不同电压状态，以及第二不同范围内的电压，并将电压确定为第二选择读取电压。第一电压状态与第二电压重叠。第三电压状态与第四电压状态重叠。第三和第四电压状态的交点处的电压与第二读取电压之间的差异大于第一和第二电压状态与第一读取电压的交点处的电压之间的差。

3. 发明授权

US09947394B2 Nonvolatile memory device including page buffer and method for reading data without a dumping process for backing up data 有权
公开(公告)号：US09947394B2
公开(公告)日：2018-04-17
申请号：US15361451
申请日：2016-11-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyun-Jun Yoon
IPC分类号： G11C11/34 , G11C11/56 , G11C16/08 , G11C16/34
CPC分类号： G11C11/5642 , G11C11/5628 , G11C16/08 , G11C16/24 , G11C16/26 , G11C16/3459 , G11C2211/5642 , G11C2211/5643
摘要： A nonvolatile memory device including a page buffer and a method of operating the nonvolatile memory device, the method including performing a first sensing operation using a first sensing voltage; precharging some bit lines from among a plurality of bit lines, according to first data stored in a first latch unit of a page buffer due to the first sensing operation; resetting the first latch unit; and performing a second sensing operation using a second sensing voltage.

4. 发明申请

US20170125091A1 NON-VOLATILE MEMORY DEVICE FOR SELECTIVELY PERFORMING RECOVERY OPERATION AND METHOD OF OPERATING THE SAME 有权
公开(公告)号：US20170125091A1
公开(公告)日：2017-05-04
申请号：US15288758
申请日：2016-10-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyun-Jun Yoon , Jae-Woo Im
IPC分类号： G11C11/56 , G11C16/20 , G11C16/34 , G11C16/04
CPC分类号： G11C11/5642 , G11C7/08 , G11C11/5628 , G11C16/0483 , G11C16/20 , G11C16/32 , G11C16/3404
摘要： A non-volatile memory device for selectively performing a recovery operation and a method of operating the same are provided. The method of operating a non-volatile memory device includes receiving a first read command, performing a first sensing operation in response to the first read command, and receiving a second read command. The method further includes completing a memory operation corresponding to the first read command without performing a recovery operation when the second read command is received before the first sensing operation is completed, and performing a second sensing operation in response to the second read command.

5. 发明授权

US09147483B2 Apparatus and method of operating memory device 有权
标题翻译：操作存储器件的装置和方法
公开(公告)号：US09147483B2
公开(公告)日：2015-09-29
申请号：US14068122
申请日：2013-10-31
申请人： Samsung Electronics Co., Ltd.
发明人： Hyun-Jun Yoon , Jae-Yong Jeong , Myoung-Hoon Choi , Bo-Geun Kim , Ki-Tae Park
IPC分类号： G11C16/26 , G06F11/10 , G11C11/56 , G11C16/34 , G11C29/04
CPC分类号： G11C16/26 , G06F11/1048 , G11C11/5642 , G11C16/3422 , G11C2029/0411 , G11C2211/5641
摘要： A memory device useable with a memory system includes a voltage generator to a plurality of first candidate voltages and a plurality of second candidate voltages, and an X decoder to sequentially apply each of the plurality of first candidate voltages and each of the plurality of second candidate voltages to one or more cells of a memory cell array, and then to apply one of the plurality of first candidate voltages and one of the plurality of second candidate voltages as a first read voltage and a second voltage, respectively, to read data from the cells of the memory cell array according to a characteristic of the cells of the memory cell array.
摘要翻译：可与存储器系统一起使用的存储装置包括电压发生器到多个第一候选电压和多个第二候选电压，以及X解码器，以顺序地施加多个第一候选电压中的每一个，并且多个第二候选电压到存储单元阵列的一个或多个单元，然后分别施加多个第一候选电压和多个第二候选电压中的一个作为第一读取电压和第二电压以从根据存储单元阵列的单元的特性，存储单元阵列的单元。

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