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1. 发明公开

US20240051079A1 CHEMICAL MECHANICAL POLISHING APPARATUS AND CHEMICAL MECHANICAL POLISHING SYSTEM USING THE SAME 审中-公开
公开(公告)号：US20240051079A1
公开(公告)日：2024-02-15
申请号：US18296021
申请日：2023-04-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Eunkyoung Kim , Kiho Bae , Hoyoung Kim , Boumyoung Park , Boun Yoon
IPC分类号： B24B37/005 , G05D11/13
CPC分类号： B24B37/0056 , G05D11/138 , H01L21/31053
摘要： A chemical mechanical polishing apparatus includes: supply pipes to which a slurry stock solution and a diluent are supplied; flow rate control units, respectively disposed on the supply pipes to control flow rates of the slurry stock solution and the diluent; a mixer connected to the flow rate control units and configured to mix the slurry stock solution and the diluent, supplied from the supply pipes, to prepare a slurry; a slurry storage unit connected to the mixer and configured to store the slurry prepared in the mixer; a slurry supply unit configured to draw out the slurry stored in the slurry storage unit and to supply the slurry to a polishing pad; and a control unit configured to control the flow rate control units to control a mixing ratio of the slurry stock solution and the diluent and a flow rate of the slurry to the polishing pad.

2. 发明授权

US09972696B2 Etching method and method of fabricating a semiconductor device using the same 有权
公开(公告)号：US09972696B2
公开(公告)日：2018-05-15
申请号：US15229930
申请日：2016-08-05
申请人： Samsung Electronics Co., Ltd.
发明人： Hoyoung Kim , Sang Won Bae , Jae-Jik Baek , Wonsang Choi
IPC分类号： H01L21/3213 , H01L29/66 , H01L21/28 , H01L21/3205 , C09K13/00
CPC分类号： H01L29/66545 , C09K13/00 , H01L21/28017 , H01L21/28255 , H01L21/32055 , H01L21/32134 , H01L29/66553 , H01L29/66795 , H01L29/7848
摘要： The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

3. 发明授权

US09898838B2 Graphics processing apparatus and method for determining level of detail (LOD) for texturing in graphics pipeline 有权
公开(公告)号：US09898838B2
公开(公告)日：2018-02-20
申请号：US15073731
申请日：2016-03-18
申请人： Samsung Electronics Co., Ltd.
发明人： Heejun Shim , Kwontaek Kwon , Sunmin Kwon , Hoyoung Kim , Seonghun Jeong
IPC分类号： G06T15/04 , G06T11/00 , G06T1/20
CPC分类号： G06T11/001 , G06T1/20 , G06T11/40 , G06T15/04 , G06T2210/36
摘要： A method of determining a level of detail (LOD) for a texturing includes: acquiring texture coordinate data on pixels included in an upper block; determining a reference quad among quads included in the upper block; determining a similarity between the determined reference quad and the upper block using texture coordinates of the determined reference quad and the upper block; and determining LODs of remaining quads among the quads included in the upper block to be the same as an LOD of the determined reference quad in response to the determining of the similarity including determining that the determined reference quad and the upper block are similar.

4. 发明授权

US09006067B2 Semiconductor device and method of fabricationg the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US09006067B2
公开(公告)日：2015-04-14
申请号：US14146185
申请日：2014-01-02
申请人： Samsung Electronics Co., Ltd.
发明人： Bo Kyeong Kang , Jaeseok Kim , Boun Yoon , Hoyoung Kim , Ilyoung Yoon
IPC分类号： H01L21/8234
CPC分类号： H01L21/823431 , H01L21/823456 , H01L21/823481
摘要： A method of fabricating a semiconductor device includes forming first gate patterns on a semiconductor substrate using an etch mask pattern, forming a trench in the semiconductor substrate between the first gate patterns, forming an insulating layer in the trench, such that the insulating layer fills the trench and is disposed on the etch mask pattern, planarizing the insulating layer until a top surface of the etch mask pattern is exposed, etching a portion of the planarized insulating layer to form a device isolation layer in the trench, forming a second gate layer covering the etch mask pattern and disposed on the device isolation pattern, and planarizing the second gate layer until the top surface of the etch mask pattern is exposed, such that a second gate pattern is formed.
摘要翻译：制造半导体器件的方法包括使用蚀刻掩模图案在半导体衬底上形成第一栅极图案，在第一栅极图案之间的半导体衬底中形成沟槽，在沟槽中形成绝缘层，使得绝缘层填充沟槽并且设置在蚀刻掩模图案上，使绝缘层平坦化，直到暴露蚀刻掩模图案的顶表面，蚀刻平坦化绝缘层的一部分以在沟槽中形成器件隔离层，形成第二栅极层覆盖层蚀刻掩模图案并且设置在器件隔离图案上，并且平坦化第二栅极层，直到暴露出蚀刻掩模图案的顶表面，使得形成第二栅极图案。

5. 发明授权

US12069011B2 Electronic device and method for controlling electronic device 有权
公开(公告)号：US12069011B2
公开(公告)日：2024-08-20
申请号：US17503819
申请日：2021-10-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jiyeon Lee , Hoyoung Kim , Jaehyung An , Dongil Yang , Cheolseung Jung
IPC分类号： H04L51/04 , G06F40/20 , G06F40/30
CPC分类号： H04L51/04 , G06F40/20 , G06F40/30
摘要： An electronic device and a method for controlling thereof are provided. The electronic device may include: a memory and a processor configured to: input sentences input into a plurality of conversation rooms generated through a messenger application into a first model and acquire characteristic information of conversations conducted in the plurality of respective conversation rooms, based on a first sentence being input, input the first sentence and the characteristic information into a second model and acquire first scores indicating a similarity between the first sentence and the characteristics of the conversations conducted in the plurality of respective conversation rooms, input the first sentence and the sentences input into the plurality of conversation rooms into a third model and acquire second scores indicating relevance between the first sentence and the sentences input into the plurality of conversation rooms, identify a conversation room as a conversation room corresponding to the first sentence among the plurality of conversation rooms based on the characteristic information, the first scores, and the second scores, and input the first sentence into the identified conversation room.

6. 发明公开

US20230191555A1 CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME 审中-公开
公开(公告)号：US20230191555A1
公开(公告)日：2023-06-22
申请号：US17940403
申请日：2022-09-08
申请人： Samsung Electronics Co., Ltd.
发明人： Chaelyoung Kim , Jinyoung Park , Jaehyug Lee , Hoyoung Kim
IPC分类号： B24B37/04 , B24B37/10 , B24B57/02 , H01L21/3105
CPC分类号： B24B37/046 , B24B37/105 , B24B37/044 , B24B57/02 , H01L21/31053 , H01L21/3212
摘要： A chemical mechanical polishing apparatus, includes: a platen having a polishing pad attached to an upper surface thereof, and rotatably installed in one direction by a driving means, a slurry supply unit supplying a slurry including an abrasive and an additive having a zeta potential of a first polarity to the polishing pad, an electrode disposed below the polishing pad, a power supply unit applying a voltage including a DC pulse of a second polarity, opposite to the first polarity, to the electrode, and a polishing head installed on the polishing pad, and rotating a semiconductor substrate in contact with the polishing pad.

7. 发明授权

US10153214B2 Patterning method and a method of fabricating a semiconductor device using the same 有权
公开(公告)号：US10153214B2
公开(公告)日：2018-12-11
申请号：US15386843
申请日：2016-12-21
申请人： Samsung Electronics Co., Ltd.
发明人： Se Jung Park , Ju-Hyun Kim , Hoyoung Kim , Boun Yoon , TaeYong Kwon , Sangkyun Kim , Sanghyun Park
IPC分类号： H01L27/088 , H01L29/78 , H01L21/8238 , H01L29/66 , H01L21/84 , H01L21/3105 , H01L21/306 , H01L27/092
摘要： A patterning method for fabricating a semiconductor device includes forming, for example sequentially forming, a lower buffer layer, a first channel semiconductor layer, and a capping insulating layer on a substrate, forming an opening to penetrate the capping insulating layer and the first channel semiconductor layer and expose a portion of the lower buffer layer, forming a second channel semiconductor layer to fill the opening and include a first portion protruding above the capping insulating layer, performing a first CMP process to remove at least a portion of the first portion, removing the capping insulating layer, and performing a second CMP process to remove at least a portion of a second portion of the second channel semiconductor layer protruding above the first channel semiconductor layer.

8. 发明授权

US09997412B1 Methods of manufacturing semiconductor devices 有权
公开(公告)号：US09997412B1
公开(公告)日：2018-06-12
申请号：US15646300
申请日：2017-07-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ki Ho Bae , Jaeseok Kim , Hoyoung Kim , Boun Yoon , KyungTae Lee , Kwansung Kim , Eunji Park
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/522 , H01L21/321 , H01L29/66
CPC分类号： H01L21/823475 , H01L21/823418 , H01L21/823437
摘要： A method of manufacturing a semiconductor device includes forming on a substrate gate electrodes extending in a first direction and spaced apart from each other in a second direction, forming capping patterns on the gate electrodes, forming interlayer dielectric layer filling spaces between adjacent gate electrodes, forming a hardmask on the interlayer dielectric layer with an opening selectively exposing second to fourth capping patterns, using the hardmask as an etch mask to form holes in the interlayer dielectric layer between the second and third gate electrodes and between the third and fourth gate electrodes, forming a barrier layer and a conductive layer in the holes, performing a first planarization to expose the hardmask, performing a second planarization to expose a portion of the barrier layer covering the second to fourth capping patterns, and performing a third planarization to completely expose the first to fourth capping patterns.

9. 发明授权

US11700311B2 Electronic apparatus and operating method thereof for determining session duration time of chatbot 有权
公开(公告)号：US11700311B2
公开(公告)日：2023-07-11
申请号：US17584967
申请日：2022-01-26
申请人： Samsung Electronics Co., Ltd.
发明人： Hoyoung Kim , Dongil Yang , Jaehyung An , Jiyeon Lee , Cheolseung Jung
IPC分类号： H04L67/143 , H04L51/02 , H04L51/216 , H04L67/50
CPC分类号： H04L67/143 , H04L51/02 , H04L51/216 , H04L67/535
摘要： An electronic apparatus and an operation method thereof for determining a session duration time according to a characteristic of a response message in a chatbot are provided. The electronic apparatus is configured to determine a default session time based on a difficulty level of the response message, determine an additional session time based on conversation history information through the chatbot prior to outputting of the response message, determine a session duration time, which is a sum of the default session time and the additional session time, and provide the session duration time.

10. 发明授权

US11486082B2 Dryer and controlling method thereof 有权
公开(公告)号：US11486082B2
公开(公告)日：2022-11-01
申请号：US17078403
申请日：2020-10-23
申请人： Samsung Electronics Co., Ltd.
发明人： Taegyoon Noh , Doyoon Kim , Dohaeng Kim , Hoyoung Kim , Junhoe Choi , Jeongsu Han
IPC分类号： D06F58/38 , D06F58/22 , D06F58/02 , D06F103/34
摘要： A dryer is disclosed. The dryer includes a heat exchanger configured to remove moisture from air flowing and heat and discharge the moisture-removed air, a drum containing a material to be dried, a humidity sensor configured to detect a humidity of the air flowing from the drum, a fan configured to generate a flow of the air flowing along a flow path formed so that the air discharged from the heat exchanger flows to the heat exchanger via the drum and the humidity sensor, and a processor configured to determine a dried state of the material to be dried based on the humidity detected through the humidity sensor, and the humidity sensor is disposed at a position where a flow velocity of the air is equal to or higher than a predetermined velocity in the flow path formed between the drum and the heat exchanger.

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