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1. 发明申请

US20180284831A1 CURRENT REFERENCE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME 审中-公开
公开(公告)号：US20180284831A1
公开(公告)日：2018-10-04
申请号：US15995189
申请日：2018-06-01
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： HO-YOUNG SHIN
IPC分类号： G05F3/24 , G05F3/26
CPC分类号： G05F3/242 , G05F3/245 , G05F3/262
摘要： A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.

2. 发明申请

US20180026627A1 LEVEL SHIFTER 审中-公开
公开(公告)号：US20180026627A1
公开(公告)日：2018-01-25
申请号：US15452736
申请日：2017-03-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： HO-YOUNG SHIN
IPC分类号： H03K17/16 , H03K19/0185
CPC分类号： H03K17/165 , H03K19/018521
摘要： A level shifter includes a driving circuit, which receives an input signal and outputs a driving signal in response to a first voltage level of the input signal; a level shifting circuit, which outputs an output signal of a second voltage level in response to the driving signal; and a leakage prevention circuit, which prevents a leakage current of the driving circuit, wherein the driving circuit may include at least one native transistor.

3. 发明申请

US20170075377A1 CURRENT REFERENCE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME 有权
标题翻译：电流参考电路和半导体集成电路，包括它们
公开(公告)号：US20170075377A1
公开(公告)日：2017-03-16
申请号：US15236502
申请日：2016-08-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： HO-YOUNG SHIN
IPC分类号： G05F3/26
CPC分类号： G05F3/242 , G05F3/245 , G05F3/262
摘要： A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.
摘要翻译：包括电流参考电路的电流参考电路和半导体IC，所述电流参考电路包括与绝对温度（PTAT）电流发生器成比例的电流发生器，其被配置为在输出分支中产生与温度成比例的第一电流; 以及电流减法器，被配置为通过从在所述输出分支中流动的所述第一电流中减去基于在所述PTAT电流发生器的内部分支中流动的电流而生成的第二电流来生成参考电流。第二电流被设置为具有与第一电流相同的基于温度的变化特性和与第一电流的电平不同的电平。

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