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1. 发明申请

US20230114604A1 SEMICONDUCTOR NANOCRYSTAL PARTICLE, METHOD FOR PREPARING SAME, AND DEVICE INCLUDING SAME 有权
公开(公告)号：US20230114604A1
公开(公告)日：2023-04-13
申请号：US18065910
申请日：2022-12-14
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yong Seok HAN , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG
IPC分类号： H01L33/06 , H01L33/20 , C09K11/88 , C01B19/04 , H01L33/26
摘要： A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

2. 发明申请

US20230086635A1 SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME 有权
公开(公告)号：US20230086635A1
公开(公告)日：2023-03-23
申请号：US18059075
申请日：2022-11-28
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Garam PARK , Eun Joo JANG , Yongwook KIM , Jihyun MIN , Hyo Sook JANG , Shin Ae JUN , Taekhoon KIM , Yuho WON
IPC分类号： C09K11/88 , C09K11/70
摘要： A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

3. 发明申请

US20230079704A1 ELECTROLUMINESCENT DEVICE AND SEMICONDUCTOR NANOPARTICLE 有权
公开(公告)号：US20230079704A1
公开(公告)日：2023-03-16
申请号：US17897609
申请日：2022-08-29
申请人： Samsung Electronics Co., Ltd.
发明人： Sung Woo KIM , Yuho WON , Eun Joo JANG , Hyo Sook JANG
IPC分类号： C09K11/88 , C01B19/00 , H01L51/50
摘要： A semiconductor nanoparticle, a production method thereof, and an electroluminescent device including the same. The production method includes: combining a magnesium precursor and an additive with a chalcogen precursor in a reaction medium including an organic solvent and an organic ligand; heating the reaction medium to a reaction temperature; and reacting the magnesium precursor and the chalcogen precursor in the presence of the additive to form a magnesium chalcogenide, wherein the semiconductor nanoparticle comprises the magnesium chalcogenide, wherein the magnesium chalcogenide comprises magnesium; and selenium, sulfur, or a combination thereof, and wherein the additive includes a hydride compound including an alkali metal, calcium, barium, aluminum, or a combination thereof.

4. 发明申请

US20230074734A1 ELECTROLUMINESCENT DEVICE AND SEMICONDUCTOR NANOPARTICLE 有权
公开(公告)号：US20230074734A1
公开(公告)日：2023-03-09
申请号：US17895253
申请日：2022-08-25
申请人： Samsung Electronics Co., Ltd.
发明人： Yuho WON , Sung Woo KIM , Eun Joo JANG , Hyo Sook JANG
IPC分类号： H01L51/50 , H01L51/56 , B82Y40/00 , H01L51/00
摘要： An electroluminescent device includes a first electrode; a second electrode spaced apart from the first electrode; and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer includes semiconductor nanoparticles, wherein the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles have a core shell structure, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, wherein in a two dimensional image obtained by an electron microscopy analysis, the semiconductor nanoparticles show an average value of a circularity defined by the following equation of greater than or equal to about 0.8 and less than or equal to about 1: circularity = 4 ⁢ π × Area [ Perimeter ] 2 wherein Area is an area of a two dimensional image of an individual semiconductor nanoparticle, and Perimeter is a circumference of the two dimensional image of the individual semiconductor nanoparticle.

5. 发明申请

US20220416187A1 DISPLAY DEVICE AND LIGHT EMITTING DEVICE 有权
公开(公告)号：US20220416187A1
公开(公告)日：2022-12-29
申请号：US17851211
申请日：2022-06-28
申请人： Samsung Electronics Co., Ltd.
发明人： Tae Hyung KIM , Heejae CHUNG , Eun Joo JANG , Sujin PARK , Yuho WON
IPC分类号： H01L51/50
摘要： An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.

6. 发明申请

US20220246876A1 SEMICONDUCTOR NANOCRYSTAL PARTICLE AND PRODUCTION METHODS THEREOF 有权
公开(公告)号：US20220246876A1
公开(公告)日：2022-08-04
申请号：US17727940
申请日：2022-04-25
申请人： Samsung Electronics Co., Ltd. , The Governing Council of the University of Toronto
发明人： Jihyun MIN , Eun Joo JANG , Edward H. SARGENT , Hyo Sook JANG , Makhsud I. SAIDAMINOV , Sjoerd HOOGLAND , Ankit JAIN , Andrew JOHNSTON , Oleksandr VOZNYY
IPC分类号： H01L51/50 , H01L51/00
摘要： A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1

7. 发明申请

US20220204844A1 CORE SHELL QUANTUM DOT AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20220204844A1
公开(公告)日：2022-06-30
申请号：US17558774
申请日：2021-12-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yuho WON , Hwea Yoon KIM , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG
IPC分类号： C09K11/88 , C09K11/02 , C01G9/00
摘要： A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

8. 发明申请

US20220137286A1 LIGHT SOURCE, AND BACK LIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE LIGHT SOURCE 有权
公开(公告)号：US20220137286A1
公开(公告)日：2022-05-05
申请号：US17576895
申请日：2022-01-14
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Tae Hyung KIM , Eun Joo JANG , Shin Ae JUN , Hyun A KANG , Yongwook KIM , Na Youn WON , Hyo Sook JANG
IPC分类号： F21V8/00 , G02F1/13357 , G02F1/1335
摘要： A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65

9. 发明申请

US20220017818A1 CADMIUM FREE QUANTUM DOTS 有权
公开(公告)号：US20220017818A1
公开(公告)日：2022-01-20
申请号：US17490552
申请日：2021-09-30
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yuho WON , Nayoun WON , Sungwoo HWANG , Eun Joo JANG , Soo Kyung KWON , Yong Wook KIM , Jihyun MIN , Garam PARK , Shang Hyeun PARK , Hyo Sook JANG , Shin Ae JUN , Yong Seok HAN
IPC分类号： C09K11/08 , C08L57/10 , G02F1/13357 , H01L51/50 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14
摘要： A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

10. 发明申请

US20210222061A1 QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20210222061A1
公开(公告)日：2021-07-22
申请号：US17226154
申请日：2021-04-09
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyo Sook JANG , Yuho WON , Sungwoo HWANG , Ji Yeong KIM , Eun Joo JANG
IPC分类号： C09K11/08 , C08L57/10 , G02F1/13357 , H01L51/50 , H01L27/32 , C09D133/00 , C08F220/06 , C09D133/02
摘要： A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

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