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    • 3. 发明授权
    • Nonvolatile memory devices, memory systems and related control methods
    • 非易失存储器件,存储器系统和相关控制方法
    • US09520168B2
    • 2016-12-13
    • US15151687
    • 2016-05-11
    • SAMSUNG ELECTRONICS CO., LTD.
    • Donghun KwakHyun Jun YoonDongkyo Shim
    • G11C7/00G11C5/06G11C7/22G11C7/10
    • G11C7/22G11C7/10G11C7/1063G11C16/0483G11C16/26
    • A nonvolatile memory device includes a cell array including a plurality of cell strings extending on a substrate in a vertical direction, a page buffer connected to a plurality of bit lines and configured to store sensing data of the cell array in a sensing operation, a voltage generator configured to provide voltages to a plurality of word lines and the plurality of bit lines, and an input/output buffer configured to temporarily store the sensing data received in a data dump from the page buffer and to output the temporarily stored data to an external device. The nonvolatile memory device further includes control logic configured to set a status of the nonvolatile memory device to a ready state after the sensing data is dumped to the input/output buffer and before recovery of the cell array from a bias voltage of the sensing operation is complete.
    • 一种非易失性存储器件,包括一个单元阵列,该单元阵列包括在垂直方向上在基片上延伸的多个单元串,连接到多个位线的一个页缓冲器,并且被配置为在感测操作中存储该单元阵列的感测数据, 发生器,其被配置为向多个字线和所述多个位线提供电压;以及输入/输出缓冲器,被配置为临时存储从所述页缓冲器接收的数据转储中的感测数据,并将所述临时存储的数据输出到外部 设备。 非易失性存储装置还包括控制逻辑,其被配置为在将感测数据转储到输入/输出缓冲器之后并且在从感测操作的偏置电压恢复单元阵列之前将非易失性存储器件的状态设置为就绪状态 完成。