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1. 发明申请

US20210359136A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20210359136A1
公开(公告)日：2021-11-18
申请号：US17149164
申请日：2021-01-14
申请人： Samsung Display Co., LTD.
发明人： Ji Hye HAN , Jung Yun JO , Chul Min BAE
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12
摘要： A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

2. 发明申请

US20180033755A1 INTEGRATED CIRCUIT CHIP AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：US20180033755A1
公开(公告)日：2018-02-01
申请号：US15656849
申请日：2017-07-21
申请人： Samsung Display Co., Ltd.
发明人： Jeong Do YANG , Jeong Ho HWANG , Sang Hyeon SONG , Jung Yun JO , Seung-Hwa HA
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L2224/03622 , H01L2224/0401 , H01L2224/05013 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05166 , H01L2224/1145 , H01L2224/1146 , H01L2224/13013 , H01L2224/13017 , H01L2224/13023 , H01L2224/13026 , H01L2224/16145 , H01L2224/16227 , H01L2924/14 , H01L2924/1426 , H01L2924/3512
摘要： An exemplary embodiment provides a driving circuit chip including: a substrate; a terminal electrode disposed on the substrate; and an electrode pad disposed on the terminal electrode, wherein the electrode pad includes: a bump structure protruded from the substrate to include a short side and a long side; and a bump electrode disposed on the bump structure and connected with the terminal electrode around a short edge portion of the bump structure, wherein the bump electrode is disposed to not cover at least a part of a long edge portion of the bump structure.

3. 发明申请

US20160223872A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20160223872A1
公开(公告)日：2016-08-04
申请号：US14808570
申请日：2015-07-24
申请人： Samsung Display Co., Ltd.
发明人： Woo-Seok JEON , Sung Hoon YANG , Chang Ok KIM , Jung Yun JO
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1368 , H01L27/12 , G02F1/1362
CPC分类号： G02F1/134309 , G02F1/133345 , G02F1/134363 , G02F1/13439 , G02F1/136286 , G02F1/1368 , H01L27/124 , H01L27/1248
摘要： A liquid crystal display device includes a substrate; a gate line and a data line positioned on the substrate; a thin film transistor connected to the gate line and the data line; a passivation layer positioned on the gate line, the data line, and the thin film transistor; a first electrode positioned on the passivation layer; an interlayer insulating layer positioned on the first electrode; and a second electrode positioned on the interlayer insulating layer, wherein the first electrode includes a first layer made of an indium-zinc oxide in which a weight ratio of an indium oxide is 20 wt % or less or made of a transparent metal oxide that does not contain an indium oxide.
摘要翻译：液晶显示装置包括：基板; 位于基板上的栅极线和数据线; 连接到栅极线和数据线的薄膜晶体管; 位于栅极线，数据线和薄膜晶体管上的钝化层; 位于所述钝化层上的第一电极; 位于所述第一电极上的层间绝缘层; 以及位于所述层间绝缘层上的第二电极，其中，所述第一电极包括由氧化铟重量比为20重量％以下或由透明金属氧化物构成的铟 - 锌氧化物制成的第一层，不含氧化铟。

4. 发明申请

US20220140262A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20220140262A1
公开(公告)日：2022-05-05
申请号：US17404004
申请日：2021-08-17
申请人： Samsung Display Co., Ltd.
发明人： Chul Min BAE , Eun Jin KWAK , Jin Suk LEE , Jung Yun JO , Ji Hye HAN , Young In HWANG
IPC分类号： H01L51/00 , H01L27/32 , H01L51/52 , H01L51/56 , C23C16/40 , C23C16/34 , C23C14/18 , C23C28/00
摘要： A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

5. 发明申请

US20160379997A1 DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20160379997A1
公开(公告)日：2016-12-29
申请号：US15175839
申请日：2016-06-07
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun JO , Su Bin BAE , Sang Hyeon SONG , Cheol Geun AN
IPC分类号： H01L27/12 , G06F3/041
CPC分类号： H01L27/124 , G06F3/0416 , G06F2203/04103 , H01L27/1262
摘要： An exemplary embodiment of the described technology relates generally to a display apparatus including a plurality of pixels and corresponding to one area of a substrate for displaying an image, and a pad area corresponding to another area of the substrate, the pad area including a lower electrode configured to transmit an electric signal to the pixels, and a plurality of pad electrodes electrically connecting the lower electrode and a driving chip, wherein each of the pad electrodes includes a first contact surface for contacting the lower electrode, a second contact surface for contacting the driving chip, and an oxide layer on a surface of the pad electrode that is exposed to the outside, and that connects the first contact surface and the second contact surface.
摘要翻译：所描述的技术的示例性实施例一般涉及包括多个像素并且对应于用于显示图像的基板的一个区域的显示装置以及对应于该基板的另一个区域的焊盘区域，该焊盘区域包括下部电极被配置为向所述像素发送电信号，以及电连接所述下电极和驱动芯片的多个焊盘电极，其中每个焊盘电极包括用于接触所述下电极的第一接触表面，用于接触所述下电极的第二接触表面驱动芯片和暴露于外部的焊盘电极的表面上的氧化物层，并且连接第一接触表面和第二接触表面。

6. 发明申请

US20160211353A1 METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR 审中-公开
标题翻译：氧化物薄膜晶体管的制造方法
公开(公告)号：US20160211353A1
公开(公告)日：2016-07-21
申请号：US14966125
申请日：2015-12-11
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun JO , Su Bin BAE , Ki Seong SEO
IPC分类号： H01L29/66 , H01L29/45 , H01L29/786 , H01L29/24 , H01L21/475 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L29/41733 , H01L29/45 , H01L29/78606 , H01L29/7869
摘要： There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.
摘要翻译：提供一种制造氧化物薄膜晶体管（TFT）的方法。该方法包括在衬底上形成栅电极，在栅电极上形成一绝热层，在栅极绝缘层上形成包括沟道层的氧化物半导体层，形成在其上分离的源极和漏电极氧化半导体层，在碳（C）气氛下对其上形成有源电极和漏电极的基板进行等离子体处理，其次，在氮氧化物气氛下等离子体处理基板，依次形成第一保护层和第二保护层层。

7. 发明申请

US20220013595A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220013595A1
公开(公告)日：2022-01-13
申请号：US17349530
申请日：2021-06-16
申请人： Samsung Display Co., LTD.
发明人： Jung Yun JO , Ji Hye HAN
IPC分类号： H01L27/32 , H01L51/56
摘要： A display device includes a substrate including pixels; a buffer layer disposed on the substrate; an etch stopper layer disposed between the substrate and the buffer layer; and at least one penetrating-hole penetrating the substrate, the buffer layer, and the etch stopper layer, wherein the etch stopper layer includes amorphous carbon.

8. 发明申请

US20180166526A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20180166526A1
公开(公告)日：2018-06-14
申请号：US15836715
申请日：2017-12-08
申请人： Samsung Display Co., Ltd.
发明人： Byoung Yong KIM , Seung-Soo RYU , Jung Yun JO , Jeong Ho HWANG
IPC分类号： H01L27/32 , H01L51/52 , G06F3/041
CPC分类号： H01L27/3276 , G06F3/03547 , G06F3/041 , G06F3/0412 , G06F3/044 , H01L27/32 , H01L27/323 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/52 , H01L51/5256 , H01L2251/5392 , H01L2251/558
摘要： A display device includes: a substrate; a pad portion in a non-display area of the substrate and including a plurality of pads; a driver arranged at the pad portion to contact the pads; an interlayer insulating layer on the substrate; and an auxiliary layer in the non-display area, and each of the pads includes a first pad electrode, a second pad electrode, and a third pad electrode, which are sequentially arranged on the substrate, a width of the third pad electrode is greater than a width of the second pad electrode and a width of the first pad electrode, and a thickness of the auxiliary layer between the third pad electrode and the interlayer insulating layer is thicker than a thickness of the auxiliary layer between the third pad electrode and the second pad electrode.

9. 发明申请

US20180019220A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20180019220A1
公开(公告)日：2018-01-18
申请号：US15616639
申请日：2017-06-07
申请人： Samsung Display Co., Ltd.
发明人： Seung-Soo RYU , Jeong Do YANG , Jung Yun JO
IPC分类号： H01L23/00 , H01L21/48 , H01L23/498 , H01L27/12 , G02F1/1333 , G02F1/1362 , G02F1/1345 , G02F1/1335 , G02F1/1368
CPC分类号： H01L24/13 , G02F1/133305 , G02F1/133514 , G02F1/13452 , G02F1/13454 , G02F1/136286 , G02F1/1368 , G02F2201/121 , G02F2201/123 , H01L21/4853 , H01L23/4985 , H01L24/11 , H01L27/1214 , H01L2224/10125 , H01L2224/11011 , H01L2224/11334 , H01L2224/13019 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169
摘要： A display device includes: a flexible substrate having a display area for displaying an image and a peripheral area outside the display area; a first pad electrode in the peripheral area of the flexible substrate; and a driver connected to the first pad electrode. The driver includes: a circuit board including a driving circuit; a second pad electrode on one side of the circuit board and facing the first pad electrode; a convex structure on one side of the second pad electrode and having an oval cross-section; and a bump electrode on one side of the convex structure and connected to the first pad electrode. The bump electrode includes a column covering the convex structure and a convex portion extending from one side of the column and protruding to the first pad electrode.

10. 发明申请

US20160204266A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20160204266A1
公开(公告)日：2016-07-14
申请号：US14879283
申请日：2015-10-09
申请人： Samsung Display CO., Ltd.
发明人： Ki Seong SEO , Jung Yun JO
IPC分类号： H01L29/786 , H01L23/31 , H01L21/425 , H01L29/66 , H01L29/423 , H01L29/24 , H01L23/29
CPC分类号： H01L29/7869 , H01L21/425 , H01L23/291 , H01L23/3171 , H01L27/1248 , H01L29/24 , H01L29/42384 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A thin film transistor array panel and method of manufacturing. The thin film transistor array panel includes a substrate, a first gate electrode positioned on the substrate, a gate insulating layer positioned on the first gate, an oxide semiconductor positioned on the gate insulating layer and including a channel region, at least one etch stopper positioned on the oxide semiconductor, a second gate electrode, a source electrode and a drain electrode positioned on the at least one etch stopper, a passivation layer formed on the second gate electrode, the source electrode and the drain electrode; and a pixel electrode positioned on the passivation layer and connected to the drain electrode, in which the oxide semiconductor includes an N+ region formed in a portion exposed through the at least one etch stopper.
摘要翻译：一种薄膜晶体管阵列面板及其制造方法。薄膜晶体管阵列面板包括基板，位于基板上的第一栅极电极，位于第一栅极上的栅极绝缘层，位于栅极绝缘层上并包括沟道区域的氧化物半导体，至少一个位于在所述氧化物半导体上，位于所述至少一个蚀刻停止器上的第二栅电极，源电极和漏电极，形成在所述第二栅电极，所述源电极和所述漏电极上的钝化层; 以及位于所述钝化层上并连接到所述漏电极的像素电极，其中所述氧化物半导体包括形成在暴露于所述至少一个蚀刻停止件的部分中的N +区域。

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