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1. 发明授权

US12087865B2 Thin film transistor and thin film transistor array panel including the same 有权
公开(公告)号：US12087865B2
公开(公告)日：2024-09-10
申请号：US18176454
申请日：2023-02-28
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/12 , H01L29/417 , H01L29/66 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

2. 发明申请

US20200233512A1 TOUCH PANEL INCLUDING MESH HAVING A TRAPEZOID SHAPE 审中-公开
公开(公告)号：US20200233512A1
公开(公告)日：2020-07-23
申请号：US16840891
申请日：2020-04-06
申请人： Samsung Display Co., Ltd.
发明人： Gwang Bum KO , Hyun Jae Na
IPC分类号： G06F3/044 , G06F3/047
摘要： A touch panel including a sensing cell and a sensing line disposed on a transparent substrate. Each of the sensing cell and the sensing line includes at least one pattern line. The at least one pattern line includes unit patterns, each of the unit patterns including a first line extending in a first direction, a second line connected to the first line and extending in a second direction intersecting the first direction, a third line connected to the first line and extending in a third direction intersecting the first direction, and a fourth line connected to the third line and extending in the first direction. The first line, the second line, the third line, and an extension of the fourth line form a trapezoid. The unit patterns are repeatedly arranged and adjacent unit patterns are connected each other.

3. 发明授权

US09548034B2 Display device and method of driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US09548034B2
公开(公告)日：2017-01-17
申请号：US14715490
申请日：2015-05-18
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Ji Hun Lim , Hyun Jae Na , Dong Hwan Shim , Byung Du Ahn
IPC分类号： G09G3/36 , H01L31/0224
CPC分类号： G09G3/3648 , G09G2330/021 , G09G2360/144 , H01L31/022466
摘要： A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.
摘要翻译：显示装置包括耦合到第一扫描线和第一数据线的第一像素。第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

4. 发明授权

US09502574B2 Thin film transistor and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09502574B2
公开(公告)日：2016-11-22
申请号：US14249329
申请日：2014-04-09
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seung-Hwan Cho , Young Ki Shin , Dong Hwan Shim , Yoon Ho Khang , Hyun Jae Na
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.
摘要翻译：薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体层，第二半导体层是晶体管沟道层。

5. 发明授权

US09147741B2 Thin film transistor display panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管显示面板及其制造方法
公开(公告)号：US09147741B2
公开(公告)日：2015-09-29
申请号：US13892574
申请日：2013-05-13
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyun Jae Na , Yoon Ho Khang , Sang Ho Park , Dong Hwan Shim , Se Hwan Yu , Yong Su Lee , Myoung Geun Cha
IPC分类号： H01L21/84 , H01L21/20 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78633
摘要： A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。

6. 发明授权

US10613681B2 Touch screen having sensing electrode having electrically separated first and second regions 有权
公开(公告)号：US10613681B2
公开(公告)日：2020-04-07
申请号：US15595839
申请日：2017-05-15
申请人： Samsung Display Co., Ltd.
发明人： Hyun Jae Na , Gwang Bum Ko , Hyoung Wook Jang , Ye Ri Jeong , Jeong Yun Han
IPC分类号： G06F3/045 , G06F3/041 , G06F3/044
CPC分类号： G06F3/0418 , G06F3/044 , G06F2203/04112
摘要： A touch screen including a plurality of first sensing electrode columns having a plurality of first sensing electrodes, the plurality of first sensing electrode columns extending in one direction, and a plurality of second sensing electrode columns alternately disposed with the first sensing electrode columns, the plurality of second sensing electrode columns including a plurality of second sensing electrodes having a plurality of sub-electrodes. Sub-electrodes of one of adjacent second sensing electrodes are electrically connected to sub-electrodes of another of the adjacent second sensing electrodes. At least some of the first sensing electrodes include a first region and a second region electrically separated from the first region.

7. 发明授权

US10579174B2 Touch sensor including touch sensing electrodes and display device having the same 有权
公开(公告)号：US10579174B2
公开(公告)日：2020-03-03
申请号：US15794829
申请日：2017-10-26
申请人： Samsung Display Co., Ltd.
发明人： Kwan Ho Kim , Jin Hee Park , Ho Seok Son , Sung Yeon Cho , Jae Hyung Cho , Hyun Jae Na
IPC分类号： G06F3/041 , G06F3/044 , G09G3/3225 , H01L51/52 , H01L27/32
摘要： A touch sensor includes a touch sensing column, a touch sensing row, and connectors. The touch sensing column has a plurality of first touch sensing electrodes extending in one direction. The touch sensing row has a plurality of second sensing electrodes extending in a direction intersecting the touch sensing column. The connectors connect adjacent first touch sensing electrodes or adjacent second touch sensing electrodes. Here, at least some of the first touch sensing electrodes or the second touch sensing electrodes include a first region connected to the connectors and having a first line resistance, and a second region adjacent the first region and having a second line resistance. The first line resistance is different from the second line resistance.

8. 发明授权

US09768309B2 Thin film transistor and thin film transistor array panel including the same 有权
公开(公告)号：US09768309B2
公开(公告)日：2017-09-19
申请号：US15194841
申请日：2016-06-28
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

9. 发明申请

US20150348494A1 DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20150348494A1
公开(公告)日：2015-12-03
申请号：US14715490
申请日：2015-05-18
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Ji Hun Lim , Hyun Jae Na , Dong Hwan Shim , Byung Du Ahn
IPC分类号： G09G5/00 , G09G5/18 , G09G3/36
CPC分类号： G09G3/3648 , G09G2330/021 , G09G2360/144 , H01L31/022466
摘要： A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.
摘要翻译：显示装置包括耦合到第一扫描线和第一数据线的第一像素。第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

10. 发明授权

US09034691B2 Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same 有权
标题翻译：薄膜晶体管，包括其的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09034691B2
公开(公告)日：2015-05-19
申请号：US14468472
申请日：2014-08-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang
IPC分类号： H01L21/02 , H01L29/66 , H01L27/12 , H01L29/786 , H01L21/385 , H01L21/441
CPC分类号： H01L29/7869 , H01L21/0262 , H01L21/385 , H01L21/441 , H01L27/1214 , H01L27/1225 , H01L27/1259 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/786 , H01L29/78633 , H01L29/78696
摘要： A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.
摘要翻译：提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界基本对齐。

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