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1. 发明授权

US09768208B2 Method of manufacturing organic light emitting display apparatus 有权
公开(公告)号：US09768208B2
公开(公告)日：2017-09-19
申请号：US15381998
申请日：2016-12-16
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Chaun-Gi Choi
IPC分类号： H01L51/56 , H01L27/12 , H01L29/786 , H01L27/32 , H01L49/02
CPC分类号： H01L27/127 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1274 , H01L27/3262 , H01L27/3265 , H01L28/60 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/4916 , H01L29/66969 , H01L29/78675 , H01L29/7869 , H01L51/0541 , H01L51/0545 , H01L2227/323
摘要： An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching transistor and a driving transistor. The switching transistor includes a first insulating layer between a first gate electrode and an oxide semiconductor layer. The driving transistor includes a second gate electrode on an active layer. The first insulating layer is between the active layer and the second gate electrode.

2. 发明授权

US09196667B2 Organic light-emitting display with vertically stacked capacitor and capacitive feedback 有权
标题翻译：具有垂直堆叠电容器和电容反馈的有机发光显示器
公开(公告)号：US09196667B2
公开(公告)日：2015-11-24
申请号：US14026828
申请日：2013-09-13
申请人： Samsung Display Co., Ltd.
发明人： Ki-Ju Im , Chaun-Gi Choi
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L27/3279 , H01L27/3262 , H01L27/3265 , H01L51/5228 , H01L2251/5315
摘要： An organic light-emitting display device includes a first electrode disposed on a substrate; a plurality of insulating layers which are sequentially disposed on the first electrode, and on which a contact hole for exposing a part of a surface of the first electrode is formed; and an organic light-emitting diode which includes a pixel electrode disposed on the plurality of insulating layers, a second electrode facing the pixel electrode and contacting the first electrode through the contact hole, and an organic emissive layer disposed between the pixel electrode and the second electrode.
摘要翻译：一种有机发光显示装置，包括：设置在基板上的第一电极; 多个绝缘层，依次设置在第一电极上，并且形成用于暴露第一电极的一部分表面的接触孔; 以及有机发光二极管，其包括设置在所述多个绝缘层上的像素电极，与所述像素电极对置并且通过所述接触孔与所述第一电极接触的第二电极以及设置在所述像素电极与所述第二电极之间的有机发光层电极。

3. 发明授权

US08759133B2 Back panel for flat panel display apparatus, flat panel display apparatus comprising the same, and method of manufacturing the back panel 有权
标题翻译：用于平板显示装置的后面板，包括该平板显示装置的平面显示装置以及后面板的制造方法
公开(公告)号：US08759133B2
公开(公告)日：2014-06-24
申请号：US14054085
申请日：2013-10-15
申请人： Samsung Display Co., Ltd.
发明人： Sang-Ii Park , Chaun-Gi Choi , Tae-Kyung Ahn
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/3248 , H01L27/3251
摘要： A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.
摘要翻译：一种用于平板显示装置的后面板包括：设置在基板上的像素电极; 设置在所述基板上的薄膜晶体管（TFT）的第一栅极电极层; 第二栅极电极层，设置在所述第一栅极电极层上并且包括半导体材料; 第三栅电极层，设置在所述第二栅电极层上并且包括金属材料; 设置在所述第三栅电极层上的第一绝缘层; 设置在所述第一绝缘层上并包括透明导电氧化物半导体的有源层; 设置在所述有源层上的第二绝缘层; 通过第二绝缘层连接到有源层的源极和漏极; 以及覆盖源极和漏极的第三绝缘层。第一栅电极层和像素电极包括透明导电氧化物。

4. 发明授权

US11069755B2 Flexible display panel and display apparatus including electrochromic part 有权
公开(公告)号：US11069755B2
公开(公告)日：2021-07-20
申请号：US15707776
申请日：2017-09-18
申请人： Samsung Display Co., Ltd.
发明人： Seung-Ho Jung , Chaun-Gi Choi , Yo-Seoph Ko , Ji-Hun Ryu , Tae-Kyung Ahn , Joo-Hee Jeon
IPC分类号： H01L27/32 , H01L51/00 , H01L51/52
摘要： A display panel includes a flexible electrochromic substrate comprising a first flexible substrate layer, a second flexible substrate layer opposing to the first flexible substrate layer and an electrochromic part disposed between the first and second flexible substrate layers and configured to discolor in response to a driving signal, a transistor layer disposed on the flexible electrochromic substrate, the transistor layer comprising a plurality of transistors and an organic light emitting diode layer disposed on the flexible electrochromic substrate on which the transistor layer is disposed, the organic light emitting diode layer comprising a plurality of organic light emitting diodes connected to the plurality of transistors.

5. 发明授权

US10971701B2 Transparent display devices and methods of manufacturing transparent display devices 有权
公开(公告)号：US10971701B2
公开(公告)日：2021-04-06
申请号：US16695211
申请日：2019-11-26
申请人： Samsung Display Co., Ltd.
发明人： Seung-Ho Jung , Chaun-Gi Choi , Young-Sik Yoon , Joo-Hee Jeon , Hye-Young Park
IPC分类号： H01L51/52 , H01L51/56 , H01L51/00 , H01L27/32
摘要： A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.

6. 发明授权

US10020352B2 Substrate structure 有权
公开(公告)号：US10020352B2
公开(公告)日：2018-07-10
申请号：US15210563
申请日：2016-07-14
申请人： Samsung Display Co., Ltd.
发明人： Yung-Bin Chung , Bo-Geon Jeon , Eun-Jeong Cho , Hye-Hyang Park , Sung-Hoon Yang , Woo-Seok Jeon , Joo-Hee Jeon , Chaun-Gi Choi
IPC分类号： H01L27/14 , H01L27/32 , H01L51/52
CPC分类号： H01L27/3258 , H01L27/1218 , H01L27/1248 , H01L27/1255 , H01L27/326 , H01L27/3262 , H01L29/7869 , H01L51/5253
摘要： A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

7. 发明授权

US09214564B2 Thin film transistor and organic light emitting diode display having minimal overlap of gate electrode by source and drain electrodes 有权
标题翻译：薄膜晶体管和有机发光二极管显示器通过源电极和漏电极具有最小的栅电极重叠
公开(公告)号：US09214564B2
公开(公告)日：2015-12-15
申请号：US14096939
申请日：2013-12-04
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Chaun-Gi Choi , Sun-Kwang Kim , Hui-Won Yang , Sang-Il Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/08 , H01L35/24 , H01L51/00 , H01J1/62 , H01J63/04 , H01L29/786 , H01L27/32 , H01L29/417 , H01L21/00 , H01L21/84
CPC分类号： H01L29/7869 , H01L27/3244 , H01L27/3262 , H01L29/41733
摘要： A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.
摘要翻译：薄膜晶体管（TFT）包括设置在基板上的栅电极。氧化物半导体层设置在栅电极上。在氧化物半导体层上设置绝缘层。绝缘层包括第一接触孔，其暴露与栅电极的第一端相对应的氧化物半导体层的第一部分，以及第二接触孔，其暴露与栅极的相对端对应的氧化物半导体层的第二部分电极。源电极设置在绝缘层上，并通过第一接触孔与氧化物半导体层的第一部分接触。漏电极设置在绝缘层上，并通过第二接触孔与氧化物半导体层的第二部分接触。

8. 发明申请

US20140312320A1 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND THIN-FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED USING THE METHODS 有权
标题翻译：制造薄膜晶体管的方法，制造包括其的有机发光显示装置的方法和薄膜晶体管以及使用该方法制造的有机发光显示装置
公开(公告)号：US20140312320A1
公开(公告)日：2014-10-23
申请号：US14034291
申请日：2013-09-23
申请人： Samsung Display Co., LTD.
发明人： Hui-Won Yang , Chaun-Gi Choi
IPC分类号： H01L29/786 , H01L27/32 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L27/3244 , H01L29/66969
摘要： A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.
摘要翻译：制造薄膜晶体管的方法包括：在衬底上形成包括第一区域和第二区域的氧化物半导体图案; 在所述基板上形成绝缘膜以覆盖所述氧化物半导体图案; 通过图案去除第二区域上的绝缘膜; 通过退火处理来增加氧化物半导体图案的第一区域的载流子密度; 在所述绝缘膜上形成栅电极，使得所述栅电极与所述氧化物半导体图案绝缘并且与所述第二区域重叠; 以及形成与栅电极绝缘的源电极和漏极，并与第一区接触。

9. 发明申请

US20140038332A1 BACK PANEL FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE BACK PANEL 有权
标题翻译：用于平板显示装置的后面板，包括其的平面板显示装置和制造后面板的方法
公开(公告)号：US20140038332A1
公开(公告)日：2014-02-06
申请号：US14054085
申请日：2013-10-15
申请人： Samsung Display Co., Ltd.
发明人： Sang-Il PARK , Chaun-Gi Choi , Tae-Kyung Ahn
IPC分类号： H01L27/12
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/3248 , H01L27/3251
摘要： A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.
摘要翻译：一种用于平板显示装置的后面板包括：设置在基板上的像素电极; 设置在所述基板上的薄膜晶体管（TFT）的第一栅极电极层; 第二栅极电极层，设置在所述第一栅极电极层上并且包括半导体材料; 第三栅电极层，设置在所述第二栅电极层上并且包括金属材料; 设置在所述第三栅电极层上的第一绝缘层; 设置在所述第一绝缘层上并包括透明导电氧化物半导体的有源层; 设置在所述有源层上的第二绝缘层; 通过第二绝缘层连接到有源层的源极和漏极; 以及覆盖源极和漏极的第三绝缘层。第一栅电极层和像素电极包括透明导电氧化物。

10. 发明授权

US11626461B2 Display device 有权
公开(公告)号：US11626461B2
公开(公告)日：2023-04-11
申请号：US17338577
申请日：2021-06-03
申请人： Samsung Display Co., Ltd.
发明人： Hye-Hyang Park , Joo-Hee Jeon , Seung-Ho Jung , Chaun-Gi Choi , Hyeon-Sik Kim , Hui-Won Yang , Eun-Young Lee
IPC分类号： H01L27/32 , H01L51/00 , H01L51/52 , H01L29/786 , H01L27/12 , H01L29/51
摘要： A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

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