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1. 发明申请

US20040089220A1 Materials for use in optical and optoelectronic applications 审中-公开
标题翻译：用于光电和光电应用的材料
公开(公告)号：US20040089220A1
公开(公告)日：2004-05-13
申请号：US10669145
申请日：2003-09-23
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC.
发明人： Milan R. Kokta , Dennis L. Peressini , Jeffrey Cooke , Kevin L. Goodnight
IPC分类号： C30B001/00 , H01S003/11 , C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04 , C01B033/26
CPC分类号： H01S3/113 , H01S3/1608
摘要： A single crystal ceramic material for optical and optoelectronic applications is d, including a single crystal spinel having a general formula aADnullbE2D3, wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof. A ratio b:a>1:1 such that the spinel is rich in E2D3, and the single crystal spinel is formed by a melt process
摘要翻译：用于光电和光电应用的单晶陶瓷材料是d，包括具有通式aAD.bE2D3的单晶尖晶石，其中A选自Mg，Ca，Zn，Mn，Ba，Sr，Cd，Fe 及其组合，E选自Al，In，Cr，Sc，Lu，Fe及其组合，D选自O，S，Se及其组合。比率b：a> 1：1，使得尖晶石富含E2D3，单晶尖晶石通过熔融法形成

2. 发明申请

US20030188678A1 Spinel substrate and heteroepitaxial growth of III-V materials thereon 有权
标题翻译：尖晶石衬底和其上III-V材料的异质外延生长
公开(公告)号：US20030188678A1
公开(公告)日：2003-10-09
申请号：US10115719
申请日：2002-04-03
申请人： Saint-Gobain Ceramics & Plastics, Inc.
发明人： Milan R. Kokta , Hung T. Ong
IPC分类号： C30B001/00 , C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B15/00 , C30B29/26 , Y10T428/12076 , Y10T428/12528 , Y10T428/12667
摘要： A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1nullwnullwAlxnullynullyOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than about 4 and equal to or less than about 13, null is a divalent cationic element having an ionic radius greater than divalent magnesium, and null is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral and octahedral positions, and most of the magnesium and null occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, null and null can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of a spinel composition. A composite includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
摘要翻译：本发明的尖晶石组合物包括具有式Mg1-walphawAlx-ybetayOz的单晶晶格，其中w大于0且小于1，x大于2且小于约8，y小于x，z等于或大于约4且等于或小于约13，α是具有大于二价镁的离子半径的二价阳离子元素，β是离子半径大于三价铝的三价阳离子元素。单晶晶格具有四面体和八面体位置，大多数镁和α占据四面体位置。在一个实施方案中，可以在单晶晶格生长期间控制铝与镁，α和β的量的摩尔比，从而形成适用于III-V材料的异质外延生长的尖晶石衬底。本发明的方法包括形成尖晶石组合物的单晶晶格。复合材料包括在尖晶石层的表面处的尖晶石组成层和III-V层。形成复合材料的方法包括使用异质外延技术将III-V层沉积到尖晶石组合物的表面上。

3. 发明申请

US20030007520A1 Cobalt-doped saturable absorber Q-switches and laser systems 有权
标题翻译：钴掺杂可饱和吸收体Q开关和激光系统
公开(公告)号：US20030007520A1
公开(公告)日：2003-01-09
申请号：US09863013
申请日：2001-05-22
申请人： Saint-Gobain Ceramics & Plastics, Inc.
发明人： Milan R. Kokta , Dennis L. Peressini , Jeffrey A. Cooke , Kevin L. Goodnight
IPC分类号： H01S003/11 , H01S003/113 , H01S003/08
CPC分类号： H01S3/113 , H01S3/1608
摘要： A saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg1-xCoxAlyOz where x is greater than 0 and less than 1, y is greater than 2 and less than about 8, and z is between about 4 and 13. The lattice has tetrahedral and octahedral positions, and most of the magnesium and cobalt occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the combined amount of magnesium and cobalt in the monocrystalline lattice can be controlled during growth of the monocrystalline lattice to thereby form a saturable absorber Q-switch that exhibits a 4T1 spectrum for the cobalt ion of at least about 1544 nullm. In another embodiment, a laser system, such as an Er:Yr:glass laser system, includes a saturable absorber Q-switch that includes a monocrystalline lattice wherein the molar ratio of aluminum to the combined amounts of magnesium and cobalt exceeds 2:1, and preferably is about 6:1, and wherein essentially all of the magnesium and cobalt components of the monocrystalline occupy tetrahedral positions of the lattice.
摘要翻译：饱和吸收剂Q开关包括具有式Mg1-xCoxAlyOz的单晶晶格，其中x大于0且小于1，y大于2且小于约8，z在约4和13之间。晶格具有四面体和八面体位置，大部分镁和钴占据四面体位置。在一个实施方案中，可以在单晶晶格的生长期间控制铝与单晶晶格中镁和钴的组合量的摩尔比，从而形成饱和吸收剂Q开关，其显示出对于钴离子的4T1光谱至少约1544个妈妈。在另一个实施例中，诸如Er：Yr：玻璃激光系统的激光系统包括可饱和吸收器Q开关，其包括单晶晶格，其中铝与镁和钴的组合量的摩尔比超过2:1，并且优选为约6:1，并且其中单晶的基本上所有的镁和钴组分占据晶格的四面体位置。

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