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1. 发明授权

US4589261A Ice making machine and method of manufacture thereof 失效
标题翻译：制冰机及其制造方法
公开(公告)号：US4589261A
公开(公告)日：1986-05-20
申请号：US558759
申请日：1983-12-06
申请人： Ryutaro Ohashi , Hisashi Hasegawa , Masao Miyoshi , Hajime Iida , Toshiyuki Mase , Takashi Tanaka , Tsunemasa Funatsu , Tami Nakanishi
发明人： Ryutaro Ohashi , Hisashi Hasegawa , Masao Miyoshi , Hajime Iida , Toshiyuki Mase , Takashi Tanaka , Tsunemasa Funatsu , Tami Nakanishi
IPC分类号： F25C1/12 , F25C5/10
CPC分类号： F25C1/12
摘要： A ice making machine having a plurality of novel ice making plates or more preferably cylindrical ice making plates, which is formed to be longitudinal cell type wherein said ice making plates proper can be integrally fabricated by extrusion or drawing of heat conductive material, to have a means of fixing cooling tubing thereto by expanding, to be constructed said ice making plates proper and distance pieces made of heat insulating material being piled up alternately upon each other, to be constructed said cooling tubing being fixed thereto by expanding and thus to be assembled ice making plates having a predetermined size and number of ice cube making chambers therein.
摘要翻译：制冰机具有多个新颖的制冰板，或更优选圆柱形制冰板，其形成为纵槽式，其中所述制冰板本身可通过挤压或拉制导热材料而整体制造，以具有通过膨胀将冷却管固定在其上的装置，所述制冰板适当地构成，并且由绝热材料制成的距离件彼此交替堆叠，以构成所述冷却管通过膨胀固定到其上，从而组装成冰制造板具有预定尺寸和数量的制冰室。

2. 发明授权

US07432568B2 High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof 有权
标题翻译：高电压工作场效应晶体管及其偏置电路及其高电压电路
公开(公告)号：US07432568B2
公开(公告)日：2008-10-07
申请号：US11063468
申请日：2005-02-22
申请人： Yutaka Hayashi , Hisashi Hasegawa , Yoshifumi Yoshida , Jun Osanai
发明人： Yutaka Hayashi , Hisashi Hasegawa , Yoshifumi Yoshida , Jun Osanai
IPC分类号： H01L29/76
CPC分类号： H01L29/4238
摘要： A high voltage operating field effect transistor has a substrate, a semiconductor channel formation region disposed in a surface of the substrate, a source region and a drain region which are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region, a gate insulating film region disposed on the semiconductor channel formation region, a resistive gate region disposed on the gate insulating film region, a source side electrode disposed on a source region end portion side of the resistive gate region, and a drain side electrode disposed on a drain region end portion side of the resistive gate region. A signal electric potential is supplied to the source side electrode, and a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential is supplied to the drain side electrode.
摘要翻译：高电压工作场效应晶体管具有衬底，设置在衬底的表面中的半导体沟道形成区域，源极区域和漏极区域，其中半导体沟道形成区域设置在源极区域和源极区域之间，漏极区域，设置在半导体沟道形成区域上的栅极绝缘膜区域，设置在栅极绝缘膜区域上的电阻栅极区域，设置在电阻栅极区域的源极区域端部侧的源极侧电极，以及漏极区域设置在电阻栅极区域的漏区端部侧的侧面电极。信号电位被提供给源极电极，并且提供绝对值等于或大于指定电位并且根据漏极电位的增加或减小而变化的偏置电位到漏极侧电极。

3. 发明申请

US20070272984A1 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20070272984A1
公开(公告)日：2007-11-29
申请号：US11805195
申请日：2007-05-21
申请人： Akiko Tsukamoto , Hisashi Hasegawa , Jun Osanai
发明人： Akiko Tsukamoto , Hisashi Hasegawa , Jun Osanai
IPC分类号： H01L29/76 , H01L21/20 , H01L29/94 , H01L31/00
CPC分类号： H01L27/0629 , H01L28/20 , H01L29/4238 , H01L29/7833
摘要： Provided is a semiconductor device manufacturing method including a field oxide insulation film forming step including forming a field oxide insulation film (12) so that, in an active region (13), a portion (13a), which corresponds to a side surface portion of the active region (13) opposing a rotation center (O) in spin-coating on the surface of the semiconductor substrate (11) in a centrifugal force acting direction (F) along the surface of the semiconductor substrate (11) and located in a forward side of the centrifugal force acting direction (F), has a curved surface convex to the forward side of the centrifugal force acting direction (F) when the semiconductor substrate (11) is seen in a plan view.
摘要翻译：提供一种包括场氧化物绝缘膜形成步骤的半导体器件制造方法，包括形成场氧化物绝缘膜（12），使得在有源区域（13）中，对应于侧表面部分的部分（13a）在所述半导体衬底（11）的表面上沿离心力作用方向（F）在所述半导体衬底（11）的表面上旋转旋转的旋转中心（O）的有源区域（13）离心力作用方向（F）的前方具有在俯视图中看到半导体基板（11）时朝向离心力作用方向（F）的前方凸出的曲面。

4. 发明申请

US20060196914A1 X-ray inspection device and x-ray inspection method 有权
标题翻译： X射线检查装置和X射线检查方法
公开(公告)号：US20060196914A1
公开(公告)日：2006-09-07
申请号：US11357045
申请日：2006-02-21
申请人： Tomoyuki Hiramatsu , Yoshinori Hayashi , Hisashi Hasegawa
发明人： Tomoyuki Hiramatsu , Yoshinori Hayashi , Hisashi Hasegawa
IPC分类号： B23K31/12 , G01B7/00
CPC分类号： B23K31/12 , H05K1/0269 , H05K3/3436
摘要： A X-ray inspection device for inspecting a solder connection portion between a circuit device having a solder ball and a printed circuit board having a land includes: X-ray irradiating means for irradiating X-ray to the solder connection portion between the solder ball and the land; X-ray detecting means for detecting the X-ray transmitted through the solder connection portion and for outputting a detection signal; and image forming means for forming and outputting a horizontal tomographic image of the solder connection portion on the basis of the detection signal. The horizontal tomographic image shows existence or nonexistence of a solder bump disposed on a side of the land.
摘要翻译：一种用于检查具有焊球的电路装置和具有焊盘的印刷电路板之间的焊料连接部分的X射线检查装置包括：X射线照射装置，用于将X射线照射到焊球和焊球之间的焊料连接部分那片土地; X射线检测装置，用于检测通过焊料连接部分透射的X射线，并输出检测信号; 以及图像形成装置，用于根据检测信号形成和输出焊料连接部分的水平断层图像。水平断层摄影图像显示存在或不存在设置在台面一侧的焊料凸块。

5. 发明授权

US07002235B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07002235B2
公开(公告)日：2006-02-21
申请号：US10395675
申请日：2003-03-24
申请人： Hisashi Hasegawa
发明人： Hisashi Hasegawa
IPC分类号： H01L27/01 , H01L29/00
CPC分类号： H01L28/20 , H01L21/84 , H01L27/1203 , H01L27/13
摘要： A semiconductor device has a semiconductor support substrate, a buried insulation film disposed on the semiconductor support substrate, and a single-crystal silicon active layer disposed on the buried insulation film. The buried insulation film has portions which have been removed so that remaining portions of the buried insulating film form buried insulating film island regions. The single-crystal silicon active layer has portions which have been removed so that remaining portions of the single-crystal silicon active layer form single-crystal silicon active layer island regions defining single-crystal silicon resistors of a resistance circuit.
摘要翻译：半导体器件具有半导体支撑衬底，设置在半导体支撑衬底上的掩埋绝缘膜和设置在掩埋绝缘膜上的单晶硅有源层。掩埋绝缘膜具有已经被去除的部分，使得埋入绝缘膜的剩余部分形成掩埋绝缘膜岛区域。单晶硅有源层具有被去除的部分，使得单晶硅有源层的剩余部分形成限定电阻电路的单晶硅电阻器的单晶硅有源层岛状区域。

6. 发明申请

US20060035421A1 Semiconductor device and method therefore 有权
标题翻译：因此，半导体器件和方法
公开(公告)号：US20060035421A1
公开(公告)日：2006-02-16
申请号：US11209057
申请日：2005-08-22
申请人： Hisashi Hasegawa
发明人： Hisashi Hasegawa
IPC分类号： H01L21/84 , H01L21/8244 , H01L21/8238
CPC分类号： H01L28/20 , H01L21/84 , H01L27/1203 , H01L27/13
摘要： Where the silicon active layer of an SOI substrate is used as a resistor, it is difficult to form small wells densely in a semiconductor support substrate portion under the resistor because of the presence of a buried insulation film. It is also difficult to control the potential division of the wells. Therefore, there is the problem that the resistance value is varied by potential variations. Island-like silicon active layer and buried insulation film are formed by etching. Side spacers made of polycrystalline silicon are formed on the sidewalls of step portions of the island-like silicon active layer, buried insulation film, and semiconductor support substrate. The potentials at the side spacers are controlled. Thus, resistance value variations due to variations in the potential difference between the semiconductor support substrate and the resistor can be suppressed. Furthermore, accurate potential division owing to each resistor is facilitated.
摘要翻译：在SOI衬底的硅有源层用作电阻器的情况下，由于存在掩埋绝缘膜，难以在电阻器下面的半导体支撑衬底部分中密集地形成小孔。也难以控制井的潜在分配。因此，存在电阻值随电位变化而变化的问题。岛状硅有源层和掩埋绝缘膜通过蚀刻形成。在岛状硅有源层，埋入绝缘膜和半导体支撑基板的台阶部分的侧壁上形成由多晶硅制成的侧面间隔物。控制侧面间隔物的电位。因此，可以抑制由于半导体支撑衬底和电阻器之间的电位差的变化引起的电阻值变化。此外，由于每个电阻器的精确电位分配便利。

7. 发明申请

US20050184350A1 High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof 有权
标题翻译：高电压工作场效应晶体管及其偏置电路及其高电压电路
公开(公告)号：US20050184350A1
公开(公告)日：2005-08-25
申请号：US11063468
申请日：2005-02-22
申请人： Yutaka Hayashi , Hisashi Hasegawa , Yoshifumi Yoshida , Jun Osanai
发明人： Yutaka Hayashi , Hisashi Hasegawa , Yoshifumi Yoshida , Jun Osanai
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/08 , H01L27/092 , H01L29/423 , H01L29/76 , H01L29/78 , H01L29/786
CPC分类号： H01L29/4238
摘要： A high voltage operating field effect transistor is formed in an IC or LSI by utilizing a constituent portion of a transistor for a standard power supply voltage of the IC or LSI or by utilizing it's process technique. In order to increase an operating voltage of a field effect transistor, a measure is taken in which a gate is provided with an electric potential distribution varying in accordance with the drain electric potential.
摘要翻译：通过利用IC或LSI的标准电源电压的晶体管的组成部分或利用其工艺技术，在IC或LSI中形成高电压工作场效应晶体管。为了增加场效应晶体管的工作电压，采取一种措施，其中栅极具有根据漏极电位而变化的电位分布。

8. 发明授权

US4244933A Calcium carbonate particles and processes for preparing same 失效
标题翻译：碳酸钙颗粒及其制备方法
公开(公告)号：US4244933A
公开(公告)日：1981-01-13
申请号：US23962
申请日：1979-03-26
申请人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa , Satoshi Kondo
发明人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa , Satoshi Kondo
IPC分类号： C01F11/18 , C08K3/26 , C09C1/02 , D21H19/38 , D21H21/52 , C01F5/24
CPC分类号： D21H21/52 , C01F11/18 , C01F11/183 , C08K3/26 , C09C1/021 , D21H19/385 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C01P2006/14 , C01P2006/19
摘要： The invention provides calcium carbonate particles comprising a core and projections formed thereon, and process for preparing same. The calcium carbonates of this invention are useful as fillers and pigments for rubbers, plastics, papers, etc. because of their peculiar configuration and unique properties.
摘要翻译：本发明提供了包含芯和形成在其上的突起的碳酸钙颗粒及其制备方法。本发明的碳酸钙由于其特殊的构造和独特的性质而可用作橡胶，塑料，纸等的填料和颜料。

9. 发明授权

US4240870A Filled paper 失效
标题翻译：填充纸
公开(公告)号：US4240870A
公开(公告)日：1980-12-23
申请号：US74317
申请日：1979-09-11
申请人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa
发明人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa
IPC分类号： C09C1/00 , C09C1/02 , D21H17/67 , D21H3/78
CPC分类号： D21H17/675
摘要： The filled paper is filled with at least one of (i) a calcium carbonate in the form of particles comprising a core about 0.5 to about 6.5 .mu.m in average diameter and about 100 to about 4000 projections formed on the surface of the core and having a length (L) of about 0.25 to about 2.00 .mu.m, a diameter (D) of about 0.08 to about 0.20 .mu.m and an aspect ratio (L/D) of about 3 to about 10, the calcium carbonate having a void volume of about 1.0 to about 1.8 ml/g and an oil absorption of about 45 to about 60 ml/100 g, and (ii) a calcium carbonate in the form of particles comprising a core about 0.2 to about 2.0 .mu.m in average diameter and about 100 to about 4000 projections formed on the surface of the core and having a length (L) of about 0.15 to about 4.00 .mu.m, a diameter (D) of about 0.05 to about 0.20 .mu.m and an aspect ratio (L/D) of about 3 to about 20, the calcium carbonate having a void volume of about 1.8 to about 3.3 ml/g and an oil absorption of about 50 to about 100 ml/100 g.The paper has increased stiffness and enhanced opacity with reduced weight.
摘要翻译：填充的纸填充有以下中的至少一种：（i）颗粒形式的碳酸钙，其包含平均直径约0.5至约6.5μm的芯和在芯的表面上形成的约100至约4000个突起，并且具有约0.25至约2.00μm的长度（L），约0.08至约0.20μm的直径（D）和约3至约10的纵横比（L / D），所述碳酸钙具有空隙体积约1.0至约1.8ml / g，吸油量为约45至约60ml / 100g，和（ii）包含平均直径为约0.2至约2.0μm的芯颗粒形式的碳酸钙，以及在芯的表面上形成约100至约4000个突起，其长度（L）为约0.15至约4.00μm，直径（D）为约0.05至约0.20μm，纵横比（L / D ）为约3至约20，碳酸钙具有约1.8至约3.3ml / g的空隙体积和约50至约100ml / 100的吸油量 G。该纸具有增加的刚度和增强的不透明度，减轻重量。

10. 发明授权

US4133894A Process for preparing precipitated calcium carbonate 失效
标题翻译：沉淀碳酸钙的制备方法
公开(公告)号：US4133894A
公开(公告)日：1979-01-09
申请号：US832902
申请日：1977-09-13
申请人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa , Satoshi Kondo
发明人： Hiroji Shibazaki , Setsuji Edagawa , Hisashi Hasegawa , Satoshi Kondo
IPC分类号： C01F11/18
CPC分类号： C01F11/18 , C01P2004/61 , C01P2004/62
摘要： Precipitated calcium carbonate of uniform particle size is produced by contacting a suspension of calcium hydroxide with a carbon dioxide-containing gas in three steps. The particle size of precipitated calcium carbonate can be optionally selected by suitably adjusting reaction conditions.
摘要翻译：通过三步骤将氢氧化钙悬浮液与含二氧化碳气体接触来制备粒度均匀的沉淀碳酸钙。沉淀碳酸钙的粒度可以通过适当调节反应条件来任意选择。

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