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1. 发明授权

US08951815B2 Method for producing liquid-discharge-head substrate 有权
标题翻译：液体排出头基板的制造方法
公开(公告)号：US08951815B2
公开(公告)日：2015-02-10
申请号：US13526958
申请日：2012-06-19
申请人： Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
发明人： Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
IPC分类号： H01L21/00 , B41J2/16
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1634 , B41J2/1639
摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.
摘要翻译：一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。

2. 发明申请

US20120329181A1 METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE 有权
标题翻译：生产液体放电头基板的方法
公开(公告)号：US20120329181A1
公开(公告)日：2012-12-27
申请号：US13526958
申请日：2012-06-19
申请人： Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
发明人： Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
IPC分类号： H01L21/02
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1634 , B41J2/1639
摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.
摘要翻译：一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。

3. 发明授权

US08492281B2 Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate 有权
标题翻译：液体组合物，硅基板的制造方法以及液体排出头基板的制造方法
公开(公告)号：US08492281B2
公开(公告)日：2013-07-23
申请号：US13556991
申请日：2012-07-24
申请人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
发明人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： H01L21/311
CPC分类号： H01L21/30608 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1635 , B41J2/1639 , B41J2/1645 , C09K13/02
摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
摘要翻译：用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

4. 发明申请

US20120289055A1 LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE 有权
标题翻译：液体组合物，生产硅基材的方法以及生产液体放电头基材的方法
公开(公告)号：US20120289055A1
公开(公告)日：2012-11-15
申请号：US13556991
申请日：2012-07-24
申请人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
发明人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： H01L21/306
CPC分类号： H01L21/30608 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1635 , B41J2/1639 , B41J2/1645 , C09K13/02
摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
摘要翻译：用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

5. 发明授权

US08429820B2 Method of manufacturing liquid discharge head 有权
标题翻译：液体排放头的制造方法
公开(公告)号：US08429820B2
公开(公告)日：2013-04-30
申请号：US13219502
申请日：2011-08-26
申请人： Shuji Koyama , Sakai Yokoyama , Kenji Fujii , Jun Yamamuro , Keiji Matsumoto , Tetsuro Honda , Kouji Sasaki , Kenta Furusawa , Keisuke Kishimoto
发明人： Shuji Koyama , Sakai Yokoyama , Kenji Fujii , Jun Yamamuro , Keiji Matsumoto , Tetsuro Honda , Kouji Sasaki , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： B21D53/76 , B23P17/00
CPC分类号： B41J2/1604 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1635 , B41J2/1639 , B41J2/1643 , B41J2/1645 , B41J2/1646 , Y10T29/49401
摘要： The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member is disposed to surround a region that becomes the flow path, and a metal layer made of a metal or a metal compound is disposed inside of the region, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold in contact with the solid member and the mold wherein the solid member and the metal are formed with a distance therebetween, and removing the mold to form the flow path.
摘要翻译：本发明是一种液体排出头的制造方法，其特征在于，具备：设置固体部件的基板，围绕成为流路的区域，金属或金属化合物构成的金属层配置在内部在该区域内形成由金属或金属化合物制成的模具，设置由树脂制成的覆盖层以覆盖固体构件和与实心构件和模具接触的模具，其中固体构件和金属形成在它们之间的距离，并且移除模具以形成流动路径。

6. 发明申请

US20120047738A1 METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD 有权
标题翻译：制造液体放电头的方法
公开(公告)号：US20120047738A1
公开(公告)日：2012-03-01
申请号：US13219502
申请日：2011-08-26
申请人： Shuji Koyama , Sakai Yokoyama , Kenji Fujii , Jun Yamamuro , Keiji Matsumoto , Tetsuro Honda , Kouji Sasaki , Kenta Furusawa , Keisuke Kishimoto
发明人： Shuji Koyama , Sakai Yokoyama , Kenji Fujii , Jun Yamamuro , Keiji Matsumoto , Tetsuro Honda , Kouji Sasaki , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： B23P17/00
CPC分类号： B41J2/1604 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1635 , B41J2/1639 , B41J2/1643 , B41J2/1645 , B41J2/1646 , Y10T29/49401
摘要： The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member that becomes a flow path wall member is disposed to surround a region that becomes a flow path, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold, and removing the mold to form the flow path.
摘要翻译：本发明是一种液体排出头的制造方法，其特征在于，提供一种基板，在该基板上设置成为流路壁部件的实心部件，以围绕成为流路的区域，形成由金属制成的模具，在该区域内部的金属化合物，设置由树脂制成的覆盖层以覆盖实心构件和模具，并且移除模具以形成流路。

7. 发明申请

US20110183448A1 LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE 审中-公开
标题翻译：液体组合物，生产硅基材的方法以及生产液体放电头基材的方法
公开(公告)号：US20110183448A1
公开(公告)日：2011-07-28
申请号：US13014647
申请日：2011-01-26
申请人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
发明人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： H01L21/306 , C09K13/02
CPC分类号： H01L21/30608 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1635 , B41J2/1639 , B41J2/1645 , C09K13/02
摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
摘要翻译：用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

8. 发明授权

US08771531B2 Method of producing substrate for liquid ejection head 有权
标题翻译：液体喷射头用基材的制造方法
公开(公告)号：US08771531B2
公开(公告)日：2014-07-08
申请号：US13433806
申请日：2012-03-29
申请人： Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
发明人： Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1645
摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
摘要翻译：一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

9. 发明申请

US20120267342A1 METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD 有权
标题翻译：生产用于液体喷射头的基材的方法
公开(公告)号：US20120267342A1
公开(公告)日：2012-10-25
申请号：US13433806
申请日：2012-03-29
申请人： Kenta Furusawa , Shuj i Koyama , Hiroyuki Abo , Taichi Yonemoto
发明人： Kenta Furusawa , Shuj i Koyama , Hiroyuki Abo , Taichi Yonemoto
IPC分类号： B44C1/22
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1645
摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
摘要翻译：一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

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