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1. 发明授权

US07095389B2 Active matrix display device 失效
公开(公告)号：US07095389B2
公开(公告)日：2006-08-22
申请号：US09953236
申请日：2001-09-17
申请人： Hisao Uehara , Kiyoshi Yoneda , Yasushi Miyajima , Ryoichi Yokoyama
发明人： Hisao Uehara , Kiyoshi Yoneda , Yasushi Miyajima , Ryoichi Yokoyama
IPC分类号： G09G3/18
CPC分类号： G09G3/3648 , G09G2300/0842 , G09G2330/021
摘要： The display device of this invention, in which the retaining circuit for retaining the image signal is provided for each of the pixel elements, is capable of operating under two operation modes, a normal operation mode and a memory mode. Since the placement of the retaining circuit 110, which requires relatively large area, is confined to the area for the pixel element electrode 17 not in between the neighboring pixel element electrodes 17, the required area for one pixel element is minimized, resulting in the size reduction of the liquid crystal display device. By placing at least a portion of the retaining circuit in the area of the pixel element electrode 17 of the neighboring pixel element, the detour of the wiring can be omitted, resulting in the efficient use of the space. By this, the area required for the retaining circuit is minimized, directly resulting in the reduction of the size of the liquid crystal display device.

2. 发明授权

US07081875B2 Display device and its driving method 失效
标题翻译：显示装置及其驱动方法
公开(公告)号：US07081875B2
公开(公告)日：2006-07-25
申请号：US09953584
申请日：2001-09-17
申请人： Ryoichi Yokoyama , Kiyoshi Yoneda
发明人： Ryoichi Yokoyama , Kiyoshi Yoneda
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/2011 , G09G3/32 , G09G3/3614 , G09G2300/0408 , G09G2300/0809 , G09G2300/0814 , G09G2300/0842 , G09G2300/0857 , G09G2330/02 , G09G2330/021 , G09G2340/0428
摘要： In the display device having the retaining circuit for holding the digital image data at the pixel element, the power voltage supplied to the retaining circuit 110 is set up to be at the minimum level for the retaining circuit to hold the data during the data writing period, but the voltage supplied to the retaining circuit is raised by the voltage booster 95 upon the completion of the data writing. The retaining circuit 110 takes in the digital image signal fed from the drain signal line 61 in response to the signal fed from the gate signal line 51 and holds the digital image signal. Then, the display is carried out according to the signal held by the retaining circuit 110. By this, the erroneous writing of the data to the retaining circuit is prevented. The reduction of the electric power consumption and the high density integration of the pixel elements are also possible.
摘要翻译：在具有用于将数字图像数据保持在像素元件处的保持电路的显示装置中，提供给保持电路110的电源电压被设置为在数据写入期间保持电路保持数据的最小电平但是在完成数据写入时，提供给保持电路的电压被升压器95升高。保持电路110响应于从栅极信号线51馈送的信号接收从漏极信号线61馈送的数字图像信号，并保持数字图像信号。然后，根据由保持电路110保持的信号进行显示。由此，防止了将数据写入保持电路的错误写入。像素元件的电力消耗和高密度积分的减少也是可能的。

3. 发明授权

US06812912B2 Active matrix display device with storage capacitor for each pixel 有权
标题翻译：主动矩阵显示装置，每个像素具有存储电容
公开(公告)号：US06812912B2
公开(公告)日：2004-11-02
申请号：US10113693
申请日：2002-03-28
申请人： Yasushi Miyajima , Ryoichi Yokoyama , Tsutomu Yamada , Kiyoshi Yoneda
发明人： Yasushi Miyajima , Ryoichi Yokoyama , Tsutomu Yamada , Kiyoshi Yoneda
IPC分类号： G09G336
CPC分类号： G02F1/136213
摘要： An active matrix display device employing a top gate type TFT structure has a storage capacitor Csc and a liquid crystal capacitor Clc in each pixel of a pixel section, a first electrode of the storage capacitor Csc served by a p-Si active layer of the TFT, and a second electrode formed to at least partly overlap the active layer, with an insulating layer between the active layer and the second electrode below it. When a driver section is to be built in, the driver section TFT is the same top gate type as the pixel section TFT, and an active layer is made of the same material as the active layer and has a conductive layer which is made of the same material as the second electrode with the insulating layer held between the active layer and the conductive layer below it. The pixel section can form the storage capacitor while preventing lowering of the aperture ratio. Because conditions for the polycrystalization annealing of the active layer are equal for the pixel section TFT and the driver section TFT, TFTs with the same properties can be obtained.
摘要翻译：使用顶栅型TFT结构的有源矩阵显示装置在像素部的每个像素中具有存储电容器Csc和液晶电容器Clc，由TFT的p-Si有源层服务的存储电容器Csc的第一电极以及形成为至少部分地与有源层重叠的第二电极，在其之间的有源层和第二电极之间具有绝缘层。当要构建驱动器部分时，驱动器部分TFT与像素部分TFT相同的顶栅型，并且有源层由与有源层相同的材料制成并具有导电层，该导电层由与第二电极相同的材料，其绝缘层保持在有源层和其下面的导电层之间。像素部可以形成保持电容，同时防止开口率的降低。由于有源层的多晶退火条件对于像素部分TFT和驱动部分TFT是相同的，因此可获得具有相同特性的TFT。

4. 发明授权

US06451636B1 Semiconductor device and display device having laser-annealed semiconductor element 有权
标题翻译：具有激光退火半导体元件的半导体器件和显示器件
公开(公告)号：US06451636B1
公开(公告)日：2002-09-17
申请号：US09151081
申请日：1998-09-10
申请人： Yasuo Segawa , Ryoichi Yokoyama , Kiyoshi Yoneda , Tsutomu Yamada
发明人： Yasuo Segawa , Ryoichi Yokoyama , Kiyoshi Yoneda , Tsutomu Yamada
IPC分类号： H01L21338
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78621 , H01L29/78678 , H01L29/78696
摘要： Regarding an element having a channel width W greater than a pitch P of a pulse laser beam, a direction of the channel width W of a channel region CH is inclined with respect to a direction of a major axis of a line beam LB. Consequently, even if a defective crystallization region R is caused by an nonuniform intensity of an irradiated region in laser annealing forming p-Si of a p-Si TFT LCD, the whole channel width W of the channel region CH does not overlap the defective crystallization region R. Therefore, even if the defective crystallization region R is generated, element characteristics are not affected. Thus, the manufacturing yield of an excellent p-Si LCD can be enhanced.
摘要翻译：关于通道宽度W大于脉冲激光束的间距P的元件，沟道区域CH的沟道宽度W的方向相对于线束LB的长轴的方向倾斜。因此，即使在由p-Si TFT LCD形成p-Si的激光退火的照射区域的不均匀强度引起有缺陷的结晶区域R的情况下，沟道区域CH的整个沟道宽度W也不会与缺陷结晶因此，即使产生不良结晶区域R，元件特性也不受影响。因此，可以提高优异的p-Si LCD的制造成品率。

5. 发明授权

US07439114B2 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US07439114B2
公开(公告)日：2008-10-21
申请号：US11207458
申请日：2005-08-18
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

6. 发明授权

US07199514B2 Display device with anti-reflection structure 有权
标题翻译：具有防反射结构的显示装置
公开(公告)号：US07199514B2
公开(公告)日：2007-04-03
申请号：US10444090
申请日：2003-05-23
申请人： Kiyoshi Yoneda
发明人： Kiyoshi Yoneda
IPC分类号： H01J1/62
CPC分类号： H01L27/3272 , H01L51/0059 , H01L51/0077 , H01L51/5284 , H05B33/22
摘要： An organic EL element with an emissive layer and a second electrode layer is formed on a device glass substrate in an organic EL display device. The second electrode layer covers the emissive layer. An anti-reflection layer for preventing the reflection of light by the second electrode layer is formed on the device glass substrate except the region where the emissive layer is formed. Since this layer prevents the reflection of light by the second electrode layer, only the light from the emissive layer radiates outwards through the device glass substrate, improving the contrast of the organic EL display device.
摘要翻译：在有机EL显示装置中的器件玻璃基板上形成具有发光层和第二电极层的有机EL元件。第二电极层覆盖发光层。在除了形成发光层的区域之外，在器件玻璃基板上形成防止第二电极层反射光的防反射层。由于该层防止第二电极层反射光，所以只有来自发光层的光通过装置玻璃基板向外辐射，改善了有机EL显示装置的对比度。

7. 发明授权

US07163850B2 Bottom gate-type thin-film transistor and method for manufacturing the same 失效
标题翻译：底栅型薄膜晶体管及其制造方法
公开(公告)号：US07163850B2
公开(公告)日：2007-01-16
申请号：US10945233
申请日：2004-09-20
申请人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1248 , H01L29/78621 , H01L29/78678
摘要： In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 1018 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.
摘要翻译：在底栅型薄膜晶体管制造方法中，在离子掺杂之后，去除离子塞（55）。离子限制器（55）不会留在位于栅电极正上方的层间绝缘膜（8）中。薄膜晶体管具有这样的结构：离子阻挡层（55）和层间绝缘层至少与半导体层（4）的沟道区域直接接触。层间绝缘膜与半导体层4之间的界面附近的杂质浓度为10原子/ cc以下。这种结构可以防止反向通道现象，并减少由制造变化引起的特性变化。

8. 发明授权

US06924508B2 Organic electroluminescence panel 有权
标题翻译：有机电致发光面板
公开(公告)号：US06924508B2
公开(公告)日：2005-08-02
申请号：US10627116
申请日：2003-07-24
申请人： Kiyoshi Yoneda , Ryuji Nishikawa
发明人： Kiyoshi Yoneda , Ryuji Nishikawa
IPC分类号： H05B33/04 , H01J1/62 , H01L27/01 , H01L27/32 , H01L29/04 , H01L35/24 , H01L51/00 , H01L51/50 , H01L51/52 , H05B33/14
CPC分类号： H01L51/5253 , H01L27/3244 , H01L51/524
摘要： A first moisture blocking layer formed of a silicon type nitride film such as SiNx or the like is formed over the entire surface so as to cover a drain electrode and a source electrode of a TFT. On the first moisture blocking layer, a first planarization film formed of an organic material is provided. On the first planarization film, a second moisture blocking layer formed of SiNx or the like is provided. In the peripheral region, the second moisture blocking layer extends down on the first moisture blocking layer and is connected with the first moisture blocking layer. Also, a sealing glass is bonded to the second moisture blocking layer using the sealing member. By enclosing the first planarization film by the first moisture blocking layer and the second moisture blocking layer, intrusion of external moisture can be effectively prevented.
摘要翻译：在整个表面上形成由诸如SiNx等的氮化硅膜形成的第一湿气阻挡层，以覆盖TFT的漏电极和源电极。在第一湿气阻挡层上，提供由有机材料形成的第一平坦化膜。在第一平面化膜上，设置由SiNx等形成的第二湿气阻挡层。在周边区域中，第二湿气阻挡层在第一湿气阻挡层上向下延伸并与第一湿气阻挡层连接。此外，使用密封构件将密封玻璃结合到第二湿气阻挡层。通过由第一湿气阻挡层和第二湿气阻挡层包围第一平坦化膜，可以有效地防止外部湿气的侵入。

9. 发明授权

US06501448B1 Electroluminescence display device with improved driving transistor structure 有权
标题翻译：具有改进的驱动晶体管结构的电致发光显示装置
公开(公告)号：US06501448B1
公开(公告)日：2002-12-31
申请号：US09493893
申请日：2000-01-28
申请人： Naoaki Komiya , Tsutomu Yamada , Kiyoshi Yoneda
发明人： Naoaki Komiya , Tsutomu Yamada , Kiyoshi Yoneda
IPC分类号： G09G330
CPC分类号： G09G3/3233 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , G09G2320/043 , H01L27/3262
摘要： An organic EL display device comprises a first TFT (30), which is a switching TFT, an organic EL element driving TFT, and an organic EL element (60) having an anode (61), a cathode (66), and an emissive element layer (65) interposed between both electrodes. The EL element driving TFT comprises a second and third TFTs (35, 40) connected in parallel. Because electrical current to the organic EL element (60) is supplied from a plurality of TFTs (35, 40), variation in the total current value can be suppressed to therefore reduce the variation in luminance, even when characteristics vary among the TFTs driving the organic EL element.
摘要翻译：有机EL显示装置包括作为开关TFT的第一TFT（30），有机EL元件驱动TFT和具有阳极（61），阴极（66）和发光二极管（60）的有机EL元件（60）元件层（65）插入在两个电极之间。 EL元件驱动TFT包括并联连接的第二TFT和第三TFT（35,40）。由于从多个TFT（35,40）供给到有机EL元件（60）的电流，因此即使当驱动TFT的TFT之间的特性变化时，也可以抑制总电流值的变化，从而降低亮度的变化有机EL元件。

10. 发明授权

US06500704B1 Semiconductor device, display device and method of fabricating the same 失效
标题翻译：半导体装置，显示装置及其制造方法
公开(公告)号：US06500704B1
公开(公告)日：2002-12-31
申请号：US09056604
申请日：1998-04-08
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78648 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

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