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1. 发明授权

US11315961B2 Field-effect transistor, method for producing same, display element, display device, and system 有权
公开(公告)号：US11315961B2
公开(公告)日：2022-04-26
申请号：US16486224
申请日：2018-03-15
申请人： Sadanori Arae , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Naoyuki Ueda , Ryoichi Saotome , Minehide Kusayanagi
发明人： Sadanori Arae , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Naoyuki Ueda , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号： H01L27/12 , H01L29/417
摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

2. 发明授权

US11069780B2 Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor 有权
公开(公告)号：US11069780B2
公开(公告)日：2021-07-20
申请号：US16353872
申请日：2019-03-14
申请人： Ryoichi Saotome , Naoyuki Ueda , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
发明人： Ryoichi Saotome , Naoyuki Ueda , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L21/02 , H01L29/24 , H01L29/66 , H01L21/28 , H01L29/786
摘要： A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

3. 发明授权

US11049951B2 Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same 有权
公开(公告)号：US11049951B2
公开(公告)日：2021-06-29
申请号：US16425446
申请日：2019-05-29
申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi , Yuichi Ando
发明人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi , Yuichi Ando
IPC分类号： H01L29/51 , H01L21/02 , C09D1/00 , C09D5/00 , H01L29/66 , H01L29/786 , H01L21/318
摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

4. 发明授权

US07538780B2 Drawing processing apparatus, display apparatus, drawing processing method and navigation apparatus 有权
标题翻译：绘图处理装置，显示装置，绘图处理方法和导航装置
公开(公告)号：US07538780B2
公开(公告)日：2009-05-26
申请号：US11364193
申请日：2006-03-01
申请人： Takeshi Ota , Takumi Arie , Isao Watanabe , Hiroshi Amano , Yuichi Ando
发明人： Takeshi Ota , Takumi Arie , Isao Watanabe , Hiroshi Amano , Yuichi Ando
IPC分类号： G09G5/00
CPC分类号： G06T17/05
摘要： A drawing processing apparatus and method wherein scrolling display which provides no sense of incongruity is achieved in 3D display. 3D information is produced using information in a drawing object range extracted as a predetermined range on map data. The drawing object range of an object of the 3D drawing process is moved in response to a scrolling operation. While the drawing object range is moved, 3D image data are successively produced using the drawing object range at every point of time and outputted to implement 3D display on a display screen. Thereupon, the drawing object range to be used for the 3D drawing is moved such that individual portions in the drawing object range are moved by movement amounts determined with reference to a distance in a perpendicular direction at a reference position in the drawing object range.
摘要翻译：在3D显示中实现了不具有不协调感的滚动显示的绘图处理装置和方法。使用在地图数据上作为预定范围提取的绘图对象范围内的信息生成3D信息。响应于滚动操作，移动3D绘图处理的对象的绘制对象范围。当绘图对象范围移动时，使用每个时间点的绘制对象范围连续地生成3D图像数据，并输出以在显示屏幕上实现3D显示。于是，用于3D绘图的绘制对象范围被移动，使得绘制对象范围内的各个部分以参考在绘制对象范围内的基准位置的垂直方向的距离确定的移动量移动。

5. 发明授权

US5531261A Process for diecasting graphite cast iron at solid-liquid coexisting state 失效
标题翻译：在固液共存状态下压铸石墨铸铁的工艺
公开(公告)号：US5531261A
公开(公告)日：1996-07-02
申请号：US366672
申请日：1994-12-30
申请人： Chisato Yoshida , Yuichi Ando , Kunio Kitamura , Seiro Yahata
发明人： Chisato Yoshida , Yuichi Ando , Kunio Kitamura , Seiro Yahata
IPC分类号： B22D17/00 , B22D27/09 , B22C9/00 , B22D23/06
CPC分类号： B22D17/007 , Y10S164/90
摘要： Graphite cast iron is diecast at a solid-liquid coexisting state with a mold having a gate opened at an area of not more than 1/10 of a pressurized area of a plunger tip.
摘要翻译：石墨铸铁在固体 - 液体共存状态下压铸，其中模具具有在柱塞尖端的加压区域的不大于1/10的面积处开口的模具。

6. 发明授权

US5308781A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5308781A
公开(公告)日：1994-05-03
申请号：US4176
申请日：1993-01-13
申请人： Yuichi Ando , Koichi Sogawa , Norio Yoshida , Masao Kiyohara
发明人： Yuichi Ando , Koichi Sogawa , Norio Yoshida , Masao Kiyohara
IPC分类号： H01L21/768 , H01L21/8234 , H01L21/8246 , H01L21/265 , H01L27/02
CPC分类号： H01L27/11293 , H01L21/8234 , Y10S148/116 , Y10S148/163 , Y10S438/981
摘要： A semiconductor memory device comprising a substrate, a longitudinal source diffusion layer for a plurality of memory transistor source regions continuously formed on the substrate, and a longitudinal drain diffusion layer for a plurality of memory transistor drain regions continuously formed on the substrate in parallel to the source diffusion layer. A word line is formed crossing over the diffusion layers. And an electrically insulating film is interposed between the word line and the diffusion layers. The insulating film is thicker than a gate oxide film formed between the diffusion layers.
摘要翻译：一种半导体存储器件，包括衬底，用于连续地形成在衬底上的多个存储晶体管源区的纵向源极扩散层和用于连续形成在衬底上的多个存储晶体管漏区的纵向漏极扩散层，源扩散层。跨越扩散层形成字线。并且在字线和扩散层之间插入有电绝缘膜。绝缘膜比在扩散层之间形成的栅极氧化膜厚。

7. 发明授权

US08791956B2 Navigation device and map scroll processing method 有权
标题翻译：导航设备和地图滚动处理方法
公开(公告)号：US08791956B2
公开(公告)日：2014-07-29
申请号：US13111118
申请日：2011-05-19
申请人： Yuichi Ando , Satoshi Yamazaki
发明人： Yuichi Ando , Satoshi Yamazaki
IPC分类号： G06F3/04883 , G06F3/0485
CPC分类号： G08G1/0969 , G01C21/3664 , G01C21/367 , G06F3/0488 , G09B29/10
摘要： A navigation device that obtains the current position based on information from a satellite, and guides a travel path from the current position to the destination on a map image includes: a display unit that displays the map image; a touch sensor unit that is arranged on the front surface of the display unit; an icon generation unit that generates a smooth scroll operation icon which is available for continuous performs smooth scroll processing for the map image and displays the smooth scroll operation icon on the map image; and a scroll control unit that executes the smooth scroll processing when the touch sensor unit detects that the smooth scroll operation icon is touched to be operated, and executes a predetermined scroll processing when the touch sensor unit detects that a region other than the smooth scroll operation icon is touched to be operated on the screen of the display unit.
摘要翻译：一种导航装置，其基于来自卫星的信息获取当前位置，并且在地图图像上引导从当前位置到目的地的行进路径包括：显示单元，显示地图图像; 触摸传感器单元，布置在所述显示单元的前表面上; 生成可用于连续的平滑滚动操作图标的图标生成单元，对地图图像进行平滑滚动处理，并在地图图像上显示平滑滚动操作图标; 以及滚动控制单元，其在触摸传感器单元检测到平滑滚动操作图标被触摸操作时执行平滑滚动处理，并且当触摸传感器单元检测到平滑滚动操作之外的区域时执行预定的滚动处理触摸图标以在显示单元的屏幕上操作。

8. 发明申请

US20060167629A1 Map display apparatus and map display method 有权
标题翻译：地图显示装置和地图显示方式
公开(公告)号：US20060167629A1
公开(公告)日：2006-07-27
申请号：US11320642
申请日：2005-12-30
申请人： Keisuke Ishii , Kenji Nagashima , Yuichi Ando
发明人： Keisuke Ishii , Kenji Nagashima , Yuichi Ando
IPC分类号： G01C21/32
CPC分类号： G01C21/32
摘要： The present invention allows a user to easily find out destinations on maps without forcing him/her to perform troublesome operations. An apparatus displays a main map image 21 showing a current position at substantially a center of a screen. The apparatus also disposes a plurality of map images 22 through 29 around the main map image 21 in thumbnail format such that each map image 22 through 29 corresponds to each direction on the main map image 21. In this manner, the apparatus provides the user with information about wider area than the main map image 21 by showing him/her the thumbnails 22 through 29, which are disposed around the main map image 21 such that each thumbnail 22 through 29 corresponds to each direction on the main map image 21. That allows the user to easily find out destinations on maps without forcing him/her to perform troublesome operations.
摘要翻译：本发明允许用户在地图上轻松找到目的地，而不强迫他/她执行麻烦的操作。装置显示主画面图21，其显示大致在屏幕中心的当前位置。该设备还以缩略图格式在主地图图像21周围配置多个地图图像22至29，使得每个地图图像22至29对应于主地图图像21上的每个方向。以这种方式，该装置通过向他们显示关于主地图图像21周围的缩略图22至29，使得每个缩略图22至29对应于每个图像的每个缩略图22至29，向用户提供关于比主地图图像21更宽的区域的信息主图上的方向图21。这样，用户就可以轻松找到地图上的目的地，而不会强迫他/她执行麻烦的操作。

9. 发明授权

US5268662A Plunger type electromagnet 失效
标题翻译：柱塞式电磁铁
公开(公告)号：US5268662A
公开(公告)日：1993-12-07
申请号：US919588
申请日：1992-07-24
申请人： Tokio Uetsuhara , Yuichi Ando , Kenji Iio , Kenichiro Kinoshita
发明人： Tokio Uetsuhara , Yuichi Ando , Kenji Iio , Kenichiro Kinoshita
IPC分类号： H01F7/122 , H01F7/13 , H01F7/16 , H01F7/00 , H01F7/08
CPC分类号： H01F7/1615 , H01F7/13
摘要： A plunger type electromagnet is provided with an attractive plate connected to the plunger, with an improved configuration of plunger and stationary element, or with a flanged tubular member of magnetic material affixed to the axial end of a coiling bobbin, in order to increase the rate of change in the permeance of the magnetic circuit at the time of attractive operation and to enhance the sensitivity of the electromagnet.Furthermore, the surface area of the abutment faces of the stationary and movable elements is calibrated so as to control the attractive and retaining force thereof.In some embodiments, a permanent magnet is provided which is shaped in the form of an annulus and is magnetized in the direction of thickness of the annulus, so as to facilitate magnetization of the permanent magnet, to reduce the number of component parts, and to provide an electromagnet which is compact in size, light in weight, and suitable for mass production.
摘要翻译：柱塞式电磁体设置有连接到柱塞的吸引板，具有柱塞和固定元件的改进的构造，或者具有固定到卷绕线轴的轴向端的磁性材料的带凸缘的管状构件，以便提高速率在有吸引力的操作时磁路的磁导率的变化并且提高电磁体的灵敏度。此外，固定和可移动元件的邻接面的表面积被校准，以便控制其吸引力和保持力。在一些实施例中，提供永磁体，其形成为环形的形状，并且沿着环的厚度的方向被磁化，以便于永磁体的磁化，以减少部件的数量，并且提供尺寸紧凑，重量轻的电磁铁，并适合批量生产。

10. 发明授权

US5119165A Semiconductor integrated circuit device using a planar structure with reduced bit line and word line resistance 失效
标题翻译：半导体集成电路器件采用具有降低的位线和字线电阻的平面结构
公开(公告)号：US5119165A
公开(公告)日：1992-06-02
申请号：US726155
申请日：1991-07-03
申请人： Yuichi Ando
发明人： Yuichi Ando
IPC分类号： H01L21/8246 , H01L23/522 , H01L23/532 , H01L27/112
CPC分类号： H01L27/112 , H01L23/522 , H01L23/53271 , H01L2924/0002
摘要： A semiconductor integrated circuit device which comprises a substrate, a first continuous longitudinal diffusion layer formed in the substrate and a second continuous longitudinal diffusion layer constitutes source areas of a plurality of MOS transistors. The second diffusion layer constitutes drain areas of the transistors. The device further comprises a first polycide layer formed on and along each of the first and second diffusion layers in contact therewith and a second polycide layer for constituting a gate electrode of each of the transistors. The second polycide layer is formed on and transversing the first polycide layers in a direction perpendicular to the first and second diffusion layers. An insulation layer is interposed between the first and second polycide layers.
摘要翻译：一种半导体集成电路器件，包括衬底，形成在衬底中的第一连续纵向扩散层和第二连续纵向扩散层构成多个MOS晶体管的源极区域。第二扩散层构成晶体管的漏极区域。该器件还包括在与其接触的第一和第二扩散层中的每一个上形成的第一多晶硅化物层和用于构成每个晶体管的栅电极的第二多晶硅化物层。第二多晶硅化物层在与第一和第二扩散层垂直的方向上形成并横穿第一多晶硅化物层。绝缘层介于第一和第二多晶硅层之间。

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