专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06340641B1 Substrate flattening method and film-coated substrate made thereby 有权
标题翻译：底材平整方法和由此制成的薄膜包衣基材
公开(公告)号：US06340641B1
公开(公告)日：2002-01-22
申请号：US09297343
申请日：1999-04-29
申请人： Ryo Muraguchi , Akira Nakashima , Atsushi Tonai , Michio Kimatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
发明人： Ryo Muraguchi , Akira Nakashima , Atsushi Tonai , Michio Kimatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
IPC分类号： H01L2131
CPC分类号： B05D1/286 , G11B5/8404
摘要： The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.
摘要翻译：本发明提供一种容易平坦化具有不平坦表面的基板的凹凸表面的方法。该方法包括在平滑基材的表面上形成含有球状微粒的涂膜的步骤; 将具有含有球状微粒的涂膜的光滑基板的表面粘附到具有不平坦表面的基板的凹凸表面上; 并将含有球状微粒的涂膜转印到基板的不平坦表面上，使得凹凸表面平坦化。

2. 发明授权

US6086699A Thin film-forming method and thin film-forming apparatus therefor 失效
标题翻译：薄膜形成方法及其薄膜形成装置
公开(公告)号：US6086699A
公开(公告)日：2000-07-11
申请号：US79112
申请日：1998-05-14
申请人： Akira Nakashima , Atsushi Tonai , Ryo Muraguchi , Michio Komatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
发明人： Akira Nakashima , Atsushi Tonai , Ryo Muraguchi , Michio Komatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
IPC分类号： H01L21/3205 , B05D1/28 , H01L21/00 , H01L21/31 , H01L21/316 , H01L21/768 , B32B33/00 , B05D5/00 , B05D7/24 , B05D7/26
CPC分类号： H01L21/6715 , B05D1/28 , H01L21/67132
摘要： Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus. By the apparatus and the method, formation of a planar thin film on a substrate such as a semiconductor wafer can be carried out continuously, stably and at a low cost, and quality lowering of the thin film and property change thereof with time caused by adherence of impurities to the thin film or contamination of the thin film with impurities are avoidable. Moreover, the apparatus and the method are applicable to large-sized substrates.
摘要翻译：公开了一种薄膜形成装置，其包括用于将薄膜形成涂布液供给到转印辊2的表面上的涂布液供给装置6，包括转印辊2的转印装置4，转印辊2的表面涂覆有从涂布液供给装置供给的薄膜形成用涂布液，形成转印薄膜8，以及用于在转印辊下连续输送基板9的基板输送机构16，所述基板9的表面设置有薄的膜，其中转印装置被制造成使得其上具有转印薄膜的转印辊表面与由基板输送装置输送的基板的表面紧密接触，以将形成在转印辊表面上的转印薄膜转印到基材表面。还公开了使用该薄膜形成装置的薄膜形成方法。通过该装置和方法，可以连续，稳定地且低成本地在诸如半导体晶片的基板上形成平面薄膜，并且随着粘附时间的推移，薄膜的质量降低及其性能变化杂质对薄膜的污染或杂质污染薄膜是可以避免的。此外，该装置和方法适用于大尺寸基板。

3. 发明授权

US06562465B1 Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film 有权
标题翻译：用于形成具有低介电常数的含二氧化硅的膜和用这种膜涂覆的基材的涂布液
公开(公告)号：US06562465B1
公开(公告)日：2003-05-13
申请号：US09446686
申请日：1999-12-23
申请人： Akira Nakashima , Atsushi Tonai , Michio Komatsu
发明人： Akira Nakashima , Atsushi Tonai , Michio Komatsu
IPC分类号： B32B2736
CPC分类号： G03F7/093 , C08K3/34 , C08K9/04 , C09D7/62 , C09D7/67 , C09D183/14 , Y10T428/249969 , Y10T428/24999 , Y10T428/2962 , Y10T428/31507 , Y10T428/31663 , C08L2666/54
摘要： A coating liquid for forming a silica-based film having a low dielectric constant, as low as 3 or less, comprising (i) silica-based fine particles having phenyl groups and (ii) a polysiloxazane which can be produced by reacting hydrolyzate of an alkoxysilane represented by the formula (XnSi(OR1)4−n)and/or hydrolyzate of a halogenated silane represented by the formula (XnSiX′4−n) with a polysilazane represented by —(SiR2R4—NR3)—m, or a coating-liquid for forming the silica-based film, comprising (i) silica-based fine particles having phenyl groups and (ii′) an oxidatively decomposable resin with the weight ratio of the particles to the resin being in the range of 0.5 to 5.
摘要翻译：一种用于形成低介电常数低至3或更低的二氧化硅基膜的涂布液，其包含（i）具有苯基的二氧化硅基微粒和（ii）聚硅氧氮烷，其可以通过使由式（XnSi（OR1）4-n）表示的烷氧基硅烷和/或由式（XnSiX'4-n）表示的卤代硅烷与 - （SiR2R4-NR3）-m表示的聚硅氮烷的水解产物或涂层 - 用于形成二氧化硅基膜的液体，其包含（i）具有苯基的二氧化硅基微粒和（ii'）具有颗粒与树脂的重量比在0.5至5的氧化分解性树脂。

4. 发明申请

US20050046782A1 Liquid crystal display cell 审中-公开
标题翻译：液晶显示单元
公开(公告)号：US20050046782A1
公开(公告)日：2005-03-03
申请号：US10499045
申请日：2002-12-10
申请人： Shunsuke Kobayashi , Nobuaki Yoshida , Atsushi Tonai
发明人： Shunsuke Kobayashi , Nobuaki Yoshida , Atsushi Tonai
IPC分类号： G02F1/1333 , G02F1/1334 , G02F1/1337 , G02F1/141 , C09K19/02
CPC分类号： G02F1/141 , G02F1/1333 , G02F1/133345 , G02F2001/133337 , G02F2001/133357
摘要： A liquid crystal display cell is provided having high-speed response, wide angle of view, bistable memory properties and high contrast and applicable to large-screen display. The liquid crystal display cell includes a pair of substrates with transparent electrode film and a liquid crystal, at least one of the substrates having a transparent electrode film, a transparent film and an alignment layer laminated successively on a surface of a substrate. The pair of substrates are arranged at a given distance in such a manner that the transparent electrode films face each other and the liquid crystal are enclosed in a gap formed between the pair of substrates with transparent electrode film, wherein (i) the transparent film comprises a matrix (A) and ion-adsorbing inorganic oxide fine particles (B), (ii) the ion-adsorbing inorganic oxide fine particles have an average particle diameter of 1 nm to 50 nm, (iii) the alignment layer has an average surface roughness of not more than 7 nm, and (iv) the liquid crystal is a ferroelectric liquid crystal or an antiferroelectric liquid crystal.
摘要翻译：提供具有高速响应，广视角，双稳态记忆特性和高对比度的液晶显示单元，适用于大屏幕显示。液晶显示单元包括具有透明电极膜和液晶的一对基板，至少一个基板具有透明电极膜，透明膜和取向层，其顺次层压在基板的表面上。一对基板以这样的方式排列，使得透明电极膜彼此面对，并且将液晶用透明电极膜封闭在形成在一对基板之间的间隙中，其中（i）透明膜包括基质（A）和离子吸附无机氧化物微粒（B），（ii）离子吸附无机氧化物微粒的平均粒径为1nm〜50nm，（iii）取向层的平均表面粗糙度不大于7nm，（iv）液晶是铁电液晶或反铁电液晶。

5. 发明授权

US07163892B2 Process for producing integrated circuit, and substrate with integrated circuit 有权
标题翻译：集成电路生产工艺，集成电路基板
公开(公告)号：US07163892B2
公开(公告)日：2007-01-16
申请号：US10275087
申请日：2001-04-23
申请人： Atsushi Tonai , Toshiharu Hirai , Tsuguo Koyanagi , Masayuki Matsuda , Michio Komatsu
发明人： Atsushi Tonai , Toshiharu Hirai , Tsuguo Koyanagi , Masayuki Matsuda , Michio Komatsu
IPC分类号： H01L21/44 , H01L21/336 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/288
摘要： There is provided a process for producing an integrated circuit, wherein not only can conductive fine particles be deposited efficiently and densely in minute wiring channels and connecting holes but also a circuit of low wiring resistance and high density can be formed and wherein a high-degree integration can be achieved to thereby bring about an economic advantage. In particular, there is provided a process for producing an integrated circuit, comprising coating a substrate provided with wiring channels with a coating liquid for integrated circuit formation containing conductive fine particles to thereby form an integrated circuit on the substrate, wherein the coating liquid for integrated circuit formation while being exposed to ultrasonic waves is applied to the wiring channels.
摘要翻译：提供了一种用于制造集成电路的方法，其中不仅可以在微小的布线通道和连接孔中有效且致密地沉积导电细颗粒，而且可以形成低布线电阻和高密度的电路，其中高度可以实现一体化，从而带来经济优势。具体地说，提供了一种集成电路的制造方法，其特征在于，在具有布线通道的基板上涂布含有导电性微粒的集成电路形成用涂布液，从而在基板上形成集成电路，其特征在于，暴露于超声波的电路形成被施加到布线通道。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式