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1. 发明申请

US20110227654A1 POWER AMPLIFYING APPARATUS AND POWER AMPLIFYING METHOD 有权
标题翻译：功率放大器和功率放大方法
公开(公告)号：US20110227654A1
公开(公告)日：2011-09-22
申请号：US13017895
申请日：2011-01-31
申请人： Ryo MOCHIZUKI , Takao Kato
发明人： Ryo MOCHIZUKI , Takao Kato
IPC分类号： H03F3/04 , H03G3/20
CPC分类号： H03F3/195 , H03F1/32 , H03F2200/18
摘要： A power amplifying apparatus according to an embodiment includes a first amplifying unit having a first amplifying element to amplify an input signal, a second amplifying unit having a second amplifying element to amplify an output signal from the first amplifying unit; and a bias supply unit giving bias values to the first amplifying element and the second amplifying element, respectively, the bias values causing the first amplifying element and the second amplifying element to operate in a non-linear region.
摘要翻译：根据实施例的功率放大装置包括具有放大输入信号的第一放大元件的第一放大单元，具有第二放大单元的第二放大单元，用于放大来自第一放大单元的输出信号; 以及分别向所述第一放大元件和所述第二放大元件施加偏置值的偏置电源单元，使得所述第一放大元件和所述第二放大元件在非线性区域中工作的所述偏置值。

2. 发明申请

US20110058343A1 MODULE CONNECTION STRUCTURE 有权
标题翻译：模块连接结构
公开(公告)号：US20110058343A1
公开(公告)日：2011-03-10
申请号：US12868798
申请日：2010-08-26
申请人： Ryo MOCHIZUKI
发明人： Ryo MOCHIZUKI
IPC分类号： H05K1/14
CPC分类号： H05K1/141 , H05K1/0243 , H05K1/025 , H05K1/142 , H05K1/181 , H05K3/0061 , H05K3/3405 , H05K2201/09781 , H05K2201/10166 , H05K2201/10189 , H05K2201/1028 , H05K2201/10409 , H05K2201/10446
摘要： According to one embodiment, a module connection structure designed to connect a module to other modules. The module includes a dielectric layer, a micro-strip path, a projection, and a plurality of gain adjusting lands. The dielectric layer is formed on a substrate. The micro-strip path is provided on the dielectric layer and configured to transmit a transmission signal input to one end portion, to the other end portion. The projection is formed at edges of the substrate, which are adjacent to the other modules, and protruding from the micro-strip path and the dielectric layer toward the other modules. The plurality of gain adjusting lands is formed adjacent to the micro-strip path, for use in adjusting an input/output gain of the module. The gain adjusting lands uncouple from the micro-strip path or other gain adjusting lands couple to the micro-strip path, thereby to adjust the input/output gain of the module.
摘要翻译：根据一个实施例，设计用于将模块连接到其他模块的模块连接结构。该模块包括电介质层，微带路径，投影和多个增益调整区域。介电层形成在基板上。微带路径设置在电介质层上，并被配置为将输入到一个端部的传输信号传输到另一端部。突起形成在与其他模块相邻的基板的边缘处，并且从微带路径和介电层向另一个模块突出。多个增益调整区域形成为与微带路径相邻，用于调整模块的输入/输出增益。增益调整平台从微带路径分离或其他增益调整平台耦合到微带路径，从而调整模块的输入/输出增益。

3. 发明申请

US20100066433A1 BIAS CONTROLLER 审中-公开
标题翻译：偏差控制器
公开(公告)号：US20100066433A1
公开(公告)日：2010-03-18
申请号：US12507443
申请日：2009-07-22
申请人： Ryo MOCHIZUKI
发明人： Ryo MOCHIZUKI
IPC分类号： H01L35/00
CPC分类号： H03F1/301 , H03F2200/18 , H03F2200/447 , H03F2200/468
摘要： A bias controller which can adjust a bias voltage of a FET without accidentally setting the bias voltage to a voltage which damages the FET, is provided. The bias controller includes temperature detector 351 configured to detect ambient temperature of FET (Field Effect Transistor) 12, 1st voltage generator 2 configured to generate a voltage signal for temperature compensating of a positive voltage based on an output of temperature detector 351, 2nd voltage generator 3 configured to generate a bias voltage signal of a positive voltage, and operational amplifier 33 and 34. Each operational amplifier 33 and 34 is individually configured to add the voltage signal for temperature compensation and the bias voltage signal, and to perform inverting amplification to generate the bias voltage of negative voltage to be applied to FET 12 and 22.
摘要翻译：提供了一种偏置控制器，其可以在不意外将偏置电压设置为损坏FET的电压的情况下调节FET的偏置电压。偏置控制器包括温度检测器351，其被配置为检测FET（场效应晶体管）12的环境温度，第一电压发生器2被配置为基于温度检测器351的输出产生用于温度补偿正电压的电压信号，第二电压发生器 3被配置为产生正电压的偏置电压信号，以及运算放大器33和34.每个运算放大器33和34分别被配置为添加用于温度补偿和偏置电压信号的电压信号，并且执行反相放大以产生施加到FET 12和22的负电压的偏置电压。

4. 发明申请

US20130069726A1 POWER AMPLIFICATION APPARATUS 有权
标题翻译：功率放大装置
公开(公告)号：US20130069726A1
公开(公告)日：2013-03-21
申请号：US13593431
申请日：2012-08-23
申请人： Ryo MOCHIZUKI
发明人： Ryo MOCHIZUKI
IPC分类号： H03F3/60 , H03F3/19
CPC分类号： H03F3/193 , H03F1/565 , H03F3/601 , H03F2200/222 , H03F2200/387
摘要： According to one embodiment, a power amplification apparatus includes an field effect transistor (FET), a first decoupling element, a power supply circuit, a second decoupling element, and a third decoupling element. The FET is arranged within a package having an input terminal and an output terminal, and power-amplify an input signal from the input terminal to a transmission signal. The first decoupling element decreases an inductance component of the transmission signal output from the FET. The power supply circuit supplies a driving power to the FET. The second decoupling element cut an RF component. The third decoupling element decreases an impedance of a drain bias circuit over a wide band.
摘要翻译：根据一个实施例，功率放大装置包括场效应晶体管（FET），第一解耦元件，电源电路，第二解耦元件和第三解耦元件。 FET布置在具有输入端子和输出端子的封装内，并且将输入信号从输入端子功率放大到发送信号。第一去耦元件降低从FET输出的发送信号的电感分量。电源电路向FET提供驱动电源。第二个去耦元件切割RF组件。第三去耦元件在宽带上降低漏极偏置电路的阻抗。

5. 发明申请

US20110187461A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20110187461A1
公开(公告)日：2011-08-04
申请号：US12850399
申请日：2010-08-04
申请人： Ryo MOCHIZUKI
发明人： Ryo MOCHIZUKI
IPC分类号： H03F3/04
CPC分类号： H03F3/04
摘要： According to one embodiment, a variable attenuator is arranged in an input stage, a plurality of transistors are cascaded on the later part of this variable attenuator, temperature sensors are arranged in the vicinity of two or more of the plurality of transistors to detect temperatures, the amount of gain change of the plurality of transistors is calculated from the temperature detection results individually obtained by the temperature sensors, the variable attenuator is controlled in such a manner as to reduce the amount gain change so that the input signal level can be controlled, and thereby the gain that tends to vary in accordance with temperature changes can be stabilized.
摘要翻译：根据一个实施例，可变衰减器布置在输入级中，多个晶体管级联在该可变衰减器的后面部分上，温度传感器布置在多个晶体管中的两个或更多个的附近以检测温度，根据由温度传感器单独获得的温度检测结果计算出多个晶体管的增益变化量，可变衰减器被控制以减少增益变化量，从而可以控制输入信号电平，从而可以稳定根据温度变化而倾向于变化的增益。

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