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1. 发明授权

US09695507B2 Automatic lithium target regenerating apparatus and automatic lithium target regenerating method 有权
公开(公告)号：US09695507B2
公开(公告)日：2017-07-04
申请号：US14128371
申请日：2012-05-31
申请人： Ryo Fujii , Masaru Nakamura , Yoshio Imahori , Masaharu Hoshi
发明人： Ryo Fujii , Masaru Nakamura , Yoshio Imahori , Masaharu Hoshi
IPC分类号： C23C16/14 , C23C16/06 , H05H6/00 , C23C14/14
CPC分类号： C23C16/06 , C23C14/14 , H05H6/00
摘要： Provided are an automatic lithium target regenerating apparatus and an automatic lithium target regenerating method, which are equipped with a measurement function of a lithium film thickness of a lithium target, and may automatically regenerate the consumed lithium target by moving a vapor deposition source to the lithium target. An automatic lithium target regenerating apparatus (106) is allowed to automatically regenerate lithium of a lithium target. The automatic lithium target regenerating apparatus (106) includes a lithium vapor deposition unit (1) for vapor-depositing the lithium on the lithium target. The lithium vapor deposition unit (1) is allowed to vapor-deposit the lithium on the lithium target by moving to the lithium target side.

2. 发明申请

US20140134324A1 AUTOMATIC LITHIUM TARGET REGENERATING APPARATUS AND AUTOMATIC LITHIUM TARGET REGENERATING METHOD 有权
标题翻译：自动锂钛靶材再生设备和自动化锂靶材再生方法
公开(公告)号：US20140134324A1
公开(公告)日：2014-05-15
申请号：US14128371
申请日：2012-05-31
申请人： Ryo Fujii , Masaru Nakamura , Yoshio Imahori , Masaharu Hoshi
发明人： Ryo Fujii , Masaru Nakamura , Yoshio Imahori , Masaharu Hoshi
IPC分类号： C23C16/06
CPC分类号： C23C16/06 , C23C14/14 , H05H6/00
摘要： Provided are an automatic lithium target regenerating apparatus and an automatic lithium target regenerating method, which are equipped with a measurement function of a lithium film thickness of a lithium target, and may automatically regenerate the consumed lithium target by moving a vapor deposition source to the lithium target. An automatic lithium target regenerating apparatus (106) is allowed to automatically regenerate lithium of a lithium target. The automatic lithium target regenerating apparatus (106) includes a lithium vapor deposition unit (1) for vapor-depositing the lithium on the lithium target. The lithium vapor deposition unit (1) is allowed to vapor-deposit the lithium on the lithium target by moving to the lithium target side.
摘要翻译：提供一种自动锂靶再生装置和自动锂靶再生方法，其具有锂靶的锂膜厚度的测量功能，并且可以通过将气相沉积源移动到锂来自动再生消耗的锂靶目标。允许自动锂靶再生装置（106）自动再生锂靶的锂。自动锂靶再生装置（106）具备锂蒸气沉积单元（1），用于在锂靶上气相沉积锂。允许锂气相沉积单元（1）通过移动到锂靶侧而将锂沉积在锂靶上。

3. 发明授权

US09099546B2 Workpiece dividing method including two laser beam application steps 有权
标题翻译：工件分割方法包括两个激光束施加步骤
公开(公告)号：US09099546B2
公开(公告)日：2015-08-04
申请号：US13275878
申请日：2011-10-18
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/00 , H01L21/78
CPC分类号： H01L21/78
摘要： A dividing method for a workpiece having a substrate with a film formed on the front side thereof. A first laser beam is applied to the film from the front side of the workpiece along the streets formed on the film, thereby forming a plurality of laser processed grooves along the streets to cut the film along the streets. Thereafter, an adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets in the condition where the focal point of the second laser beam is set inside the substrate, thereby forming a plurality of modified layers inside the substrate along the streets. Thereafter, the adhesive tape is expanded to thereby divide the substrate along the streets, thereby obtaining a plurality of individual devices. Thereafter, the back side of the substrate of each device is ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness.
摘要翻译：一种具有在其前侧形成有膜的基板的工件的分割方法。第一激光束沿着形成在膜上的街道从工件的前侧施加到膜上，从而沿着街道形成多个激光加工槽，以沿着街道切割膜。此后，粘合带附着在工件的正面。此后，在第二激光束的焦点设置在基板的内部的状态下，沿着街道将第二激光束从工件的背面施加到基板，由此在基板内部形成多个改性层街头。此后，将胶带膨胀，从而沿着街道划分基板，从而获得多个单独的装置。此后，研磨每个器件的衬底的背面以去除改性层，并将每个器件的厚度减小到预定厚度。

4. 发明授权

US08704126B2 Laser beam machining apparatus 有权
标题翻译：激光束加工设备
公开(公告)号：US08704126B2
公开(公告)日：2014-04-22
申请号：US12248685
申请日：2008-10-09
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： B23K26/00 , B23K26/06
CPC分类号： B23K26/0853 , B23K26/0006 , B23K2101/40 , B23K2103/56
摘要： A laser beam machining apparatus includes laser beam irradiation unit for irradiating a wafer held on a chuck table with a laser beam, and control unit. The laser beam irradiation unit includes a laser beam oscillator for oscillating a laser beam with such a wavelength as to be transmitted through said wafer, repetition frequency setting section for setting a repetition frequency of pulses in the laser beam oscillated from the laser beam oscillator. The control unit includes a memory for storing coordinates of an arcuate chamfer part formed at the outer periphery of the wafer and coordinates of a flat surface part surrounded by the chamfer part, and controls the repetition frequency setting section so as to set the repetition frequency of the pulses in the laser beam with which to irradiate the flat surface part to a value suitable for machining of the wafer and as to set the repetition frequency of the pulses in the laser beam with which to irradiate the chamfer part to a value higher than the repetition frequency in the pulses of the laser beam with which to irradiate the flat surface part.
摘要翻译：一种激光束加工设备，包括：激光束照射单元，用于用激光束照射夹持在卡盘台上的晶片;以及控制单元。激光束照射单元包括激光束振荡器，用于振荡具有透射通过所述晶片的波长的激光束，重复频率设置部分用于设置从激光束振荡器振荡的激光束中的脉冲的重复频率。控制单元包括存储器，用于存储形成在晶片外围的弧形倒角部分的坐标和由倒角部分包围的平坦表面部分的坐标，并控制重复频率设置部分，以便设置重复频率用于将平坦表面部分照射到激光束中的脉冲到适于晶片加工的值，并且将激光束中的脉冲的重复频率设置为高于用于照射平面部分的激光束的脉冲中的重复频率。

5. 发明授权

US08605708B2 System, device and method for TDMA-based networking using space division multiplexed transmissions 失效
标题翻译：使用空分复用传输的基于TDMA的网络的系统，设备和方法
公开(公告)号：US08605708B2
公开(公告)日：2013-12-10
申请号：US13233152
申请日：2011-09-15
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H04B1/00
CPC分类号： H04B7/0617 , G01S13/74 , H04B7/026 , H04B7/0408 , H04B7/0452 , H04B7/0697 , H04B7/2643 , H04W16/28 , H04W72/0446 , H04W72/046 , H04W74/0816 , H04W84/18 , H04W88/02
摘要： A wireless communication system includes wireless terminals. Each of the wireless terminals includes an SDM transmitting unit that includes antennas and generates directional radio signals to be transmitted to other terminals, each of which is obtained by superimposing radio signals at the antennas, each of which is composed of modulated data for each of the other terminals; a single-system receiving unit; and a TDMA control unit that controls a transmission of the SDM transmitting unit and a reception of the receiving unit in a time division manner. Using a TDMA scheme, the wireless terminals are controlled such that one of the wireless terminals acquires a transmission right for a predetermined time period to simultaneously transmit the generated directional radio signals from the SDM transmitting unit, while during the predetermined time period, the receiving units of the other wireless terminals having no transmission right simultaneously receive their corresponding directional radio signals.
摘要翻译：无线通信系统包括无线终端。每个无线终端包括包含天线的SDM发送单元，并且生成要发送到其他终端的定向无线电信号，其中每个终端通过在天线叠加无线电信号而获得，每个由无线电信号组成，每个由其他终端; 单系统接收单元; 以及TDMA控制单元，其以时分方式控制SDM发送单元的发送和接收单元的接收。使用TDMA方案，控制无线终端，使得无线终端中的一个在预定时间段内获取发送权限，以在SDM发送单元同时发送生成的定向无线电信号，而在预定时间段期间，接收单元没有发送权限的其他无线终端同时接收其相应的定向无线电信号。

6. 发明授权

US08476553B2 Method of dividing workpiece 有权
标题翻译：分割工件的方法
公开(公告)号：US08476553B2
公开(公告)日：2013-07-02
申请号：US13223941
申请日：2011-09-01
申请人： Satoshi Usuda , Kiyoshi Ohsuga , Masaru Nakamura
发明人： Satoshi Usuda , Kiyoshi Ohsuga , Masaru Nakamura
IPC分类号： B23K26/38
CPC分类号： B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50
摘要： A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.
摘要翻译：分割工件的方法包括：在不形成装置的区域的内部形成预加工变更区域; 通过成像装置通过红外成像来检测预加工变更区域的位置，从而将预加工变更区域与计划分割线之间的偏差识别为加工位置校正信息; 并通过利用加工位置校正信息形成主加工变更区域，由此能够将工件沿着规划的分割线精确地划分成单独的装置。

7. 发明申请

US20110034007A1 DIVIDING METHOD FOR PLATELIKE WORKPIECE 审中-公开
标题翻译：平板电脑工作分拣方法
公开(公告)号：US20110034007A1
公开(公告)日：2011-02-10
申请号：US12837235
申请日：2010-07-15
申请人： Yoshiaki Yodo , Masaru Nakamura
发明人： Yoshiaki Yodo , Masaru Nakamura
IPC分类号： H01L21/304
CPC分类号： H01L21/78
摘要： A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided.
摘要翻译：具有双层结构的板状工件的分割方法，使得在晶片（基板）的背面上形成焊料层（金属层）。首先，沿着形成在晶片的前侧上的每个划分线，在晶片中形成改性层。此后，工件沿着每个分割线弯曲，从而沿着每个分割线将晶片与相应的改性层作为起始点，并沿着分割线同时形成焊料层中的弱部分。此后，扩大连接于焊料层的扩展带，以向焊料层施加外力，从而沿着每个划分线将焊料层与相应的弱部分划分为起点。因此，工件完全分开。

8. 发明申请

US20100244800A1 SWITCHING POWER SUPPLY UNIT AND CONTROL CIRCUIT FOR SAME 有权
标题翻译：切换电源单元和控制电路
公开(公告)号：US20100244800A1
公开(公告)日：2010-09-30
申请号：US12723385
申请日：2010-03-12
申请人： Masaru Nakamura , Chiharu Matsumoto
发明人： Masaru Nakamura , Chiharu Matsumoto
IPC分类号： G05F1/10
CPC分类号： H02M1/32 , H02M3/156
摘要： There is provided a switching power supply unit having an overcurrent detection circuit capable of automatically selecting either a current detection method using an resistor or a current detection method using an external current detection resistor and of performing optimized overcurrent protection depending on applications. In the control circuit of the switching power supply unit for detecting a current flowing through a high-side switch as a current detection signal and comparing it with an overcurrent detection threshold value to detect an overcurrent and turning off the high-side switch to protect the switching power supply unit, a first current detection terminal connected to a power supply side terminal of the high-side switch or to a load side terminal of the high-side switch and a temperature compensating means to switch for temperature compensation on an overcurrent detection threshold value or on a current detection signal are provided.
摘要翻译：提供一种具有过电流检测电路的开关电源单元，其能够使用电阻器自动选择电流检测方法或使用外部电流检测电阻器的电流检测方法，并且根据应用执行优化的过电流保护。在用于检测流过高侧开关的电流作为电流检测信号的开关电源单元的控制电路中，并将其与过电流检测阈值进行比较，以检测过电流并关闭高侧开关以保护开关电源单元，连接到高侧开关的电源侧端子或高侧开关的负载侧端子的第一电流检测端子和用于对过电流检测阈值进行温度补偿的温度补偿装置值或电流检测信号。

9. 发明授权

US07696067B2 Method of manufacturing device 有权
标题翻译：制造装置的方法
公开(公告)号：US07696067B2
公开(公告)日：2010-04-13
申请号：US12354542
申请日：2009-01-15
申请人： Masaru Nakamura , Hirokazu Matsumoto
发明人： Masaru Nakamura , Hirokazu Matsumoto
IPC分类号： H01L21/30
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3065 , H01L21/67132 , H01L21/78
摘要： A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices.
摘要翻译：一种制造装置的方法包括：激光束加工槽形成步骤，沿着预定分割线从晶片的背面用激光束照射晶片，以沿着预定的分割线形成激光束加工的凹槽; 蚀刻步骤，蚀刻已经经过激光加工槽形成步骤的晶片的背面，以去除在激光加工槽的加工表面形成的变性层; 粘合剂膜附着工序，将粘接膜附着在已经进行了蚀刻工序的晶片的背面，并将晶片的粘合膜侧粘接在切割带的表面上; 以及将切割带扩张以使粘合膜沿着各个装置破裂的粘合膜破裂步骤。

10. 发明申请

US20090298263A1 DIVIDING METHOD FOR WAFER HAVING FILM ON THE FRONT SIDE THEREOF 有权
标题翻译：在其前端具有薄膜的分散方法
公开(公告)号：US20090298263A1
公开(公告)日：2009-12-03
申请号：US12468556
申请日：2009-05-19
申请人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
发明人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
IPC分类号： H01L21/304
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2103/172 , B23K2103/50
摘要： A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.
摘要翻译：一种用于在其前侧分割具有膜的晶片的晶片分割方法。晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

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