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1. 发明授权

US5188886A Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same 失效
标题翻译：金属氧化物介电致密体及其前体粉末及其制备方法
公开(公告)号：US5188886A
公开(公告)日：1993-02-23
申请号：US767296
申请日：1991-09-27
申请人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam C. Tanous
发明人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam C. Tanous
IPC分类号： C04B35/14 , C04B35/18 , C04B35/195
CPC分类号： C04B35/14 , C04B35/18 , C04B35/195 , Y10S428/901 , Y10T428/24917
摘要： A metal oxide dielectric dense body, comprising (I) grains having a predominant crystalline phase (a) a primary metal oxide selected from the group consisting of silicon and magnesium oxide and (b) optionally a secondary metal oxide selected from the group consisting of aluminum and zinc oxide and (II) between about 1 and about 20 atom % bismuth, vanadium, or boron oxide or combination thereof, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth, vanadium, boron, silicon, magnesium, aluminum, and zinc. The dense body has a density which is at least 95% of theoretical.
摘要翻译：一种金属氧化物电介质致密体，包括（I）具有主要结晶相的晶粒（a）选自硅和氧化镁的主要金属氧化物和（b）任选的选自铝的二次金属氧化物氧化锌和（II）约1至约20原子％的铋，钒或氧化硼或其组合，不连续地位于晶粒的边界或作为晶粒中的夹杂物，原子％基于铋，钒，硼，硅，镁，铝和锌的总原子数。密实体的密度至少为理论值的95％。

2. 发明授权

US5070050A Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same 失效
标题翻译：金属氧化物介电致密体及其前体粉末及其制备方法
公开(公告)号：US5070050A
公开(公告)日：1991-12-03
申请号：US483597
申请日：1990-02-22
申请人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam C. Tanous
发明人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam C. Tanous
IPC分类号： C04B35/14 , C04B35/18 , C04B35/195
CPC分类号： C04B35/14 , C04B35/18 , C04B35/195
摘要： A metal oxide dielectric dense body, comprising (I) grains having a predominant crystalline phase (a) a primary metal oxide selected from the group consisting of silicon and magnesium oxide and (b) optionally a secondary metal oxide selected from the group consisting of aluminum and zinc oxide and (II) between about 1 and about 20 atom % bismuth, vanadium, or boron oxide or combinations thereof, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth, vanadium, boron, silicon, magnesium, aluminum, and zinc. The dense body has a density which is at least 95% of theoretical.
摘要翻译：一种金属氧化物电介质致密体，包括（I）具有主要结晶相的晶粒（a）选自硅和氧化镁的主要金属氧化物和（b）任选的选自铝的二次金属氧化物氧化锌和（II）约1至约20原子％的铋，钒或氧化硼或其组合，不连续地位于晶粒的边界或作为晶粒中的夹杂物，原子％基于铋，钒，硼，硅，镁，铝和锌的总原子数。密实体的密度至少为理论值的95％。

3. 发明授权

US5130280A Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same 失效
标题翻译：金属氧化物介电致密体及其前体粉末及其制备方法
公开(公告)号：US5130280A
公开(公告)日：1992-07-14
申请号：US766983
申请日：1991-09-27
申请人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam S. Tanous
发明人： Ryan W. Dupon , Mark S. Thompson , Gary H. Wiseman , Douglas J. Musolf , Adam S. Tanous
IPC分类号： C04B35/14 , C04B35/18 , C04B35/195
CPC分类号： C04B35/18 , C04B35/14 , C04B35/195
摘要： A metal oxide dielectric dense body, comprising (I) grains having a predominant crystalline phase (a) a primary metal oxide selected from the group consisting of silicon and magnesium oxide and (b) optionally a secondary metal oxide selected from the group consisting of aluminum and zinc oxide and (II) between about 1 and about 20 atom % bismuth, vanadium, or boron oxide or combinations thereof, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth, vanadium, boron, silicon, magnesium, aluminum, and zinc. The dense body has a density which is at least 95% of theoretical.
摘要翻译：一种金属氧化物电介质致密体，包括（I）具有主要结晶相的晶粒（a）选自硅和氧化镁的主要金属氧化物和（b）任选的选自铝的二次金属氧化物氧化锌和（II）约1至约20原子％的铋，钒或氧化硼或其组合，不连续地位于晶粒的边界或作为晶粒中的夹杂物，原子％基于铋，钒，硼，硅，镁，铝和锌的总原子数。密实体的密度至少为理论值的95％。

4. 发明授权

US5039452A Metal oxide varistors, precursor powder compositions and methods for preparing same 失效
标题翻译：金属氧化物变阻器，前体粉末组合物及其制备方法
公开(公告)号：US5039452A
公开(公告)日：1991-08-13
申请号：US193970
申请日：1988-05-13
申请人： Mark S. Thompson , Gary H. Wiseman , Edward S. Sherman
发明人： Mark S. Thompson , Gary H. Wiseman , Edward S. Sherman
IPC分类号： C01B13/36 , C01G9/02 , C04B35/453 , H01C7/112
CPC分类号： C01G9/02 , C01B13/363 , C04B35/453 , H01C7/112
摘要： This invention provides a process for making metal oxide varistor precursor powder comprising (a) dissolving soluble precursors of the additive metal oxides, e.g. bismuth nitrate as precursor for bismuth oxide, in an aqueous solution, (b) forming a suspension or slurry in the aqueous solution of a powder of the desired primary metal oxide, e.g. zinc oxide, having the desired particle size, (c) adding a precipitating reagent to convert the additive metal from the soluble precursor form to the oxide or hydrous oxide form and precipitate the oxide or hydrous oxide in the presence of the primary metal oxide particles, (d) removing water and by-product salts to form a powder. The resulting varistor precursor powder contains smaller particles of the additive metal oxides evenly distributed throughout larger particles of the primary metal oxide. Varistors prepared from the resulting powder can be sintered at temperatures lower than conventionlly used, for example 900.degree. C.-1000.degree. C. and the resulting varistors exhibit properties of volts per grain boundary value higher than conventional varistors for example 3.75 to 4.5 and dielectric constants lower than conventional varistors, e.g., under 1000.
摘要翻译：本发明提供一种制备金属氧化物变阻器前体粉末的方法，其包括（a）溶解添加剂金属氧化物的可溶性前体，硝酸铋作为氧化铋的前体，在水溶液中，（b）在所需的一次金属氧化物的粉末的水溶液中形成悬浮液或浆料，例如，具有所需粒度的氧化锌，（c）加入沉淀试剂以将添加剂金属从可溶性前体形式转化为氧化物或含水氧化物形式，并在第一金属氧化物颗粒存在下沉淀氧化物或含水氧化物，（d）除去水和副产物盐形成粉末。所得到的变阻器前体粉末含有较小的添加金属氧化物颗粒，其均匀分布在主要金属氧化物的较大颗粒中。从所得粉末制备的压敏电阻可以在比常规使用的温度低，例如900℃-1000℃下烧结，并且得到的压敏电阻显示出比常规压敏电阻例如3.75至4.5高的每晶界值的电压特性和电介质常数低于常规压敏电阻，例如低于1000。

5. 发明授权

US5363266A Electrical surge arrester 失效
标题翻译：电涌放电器
公开(公告)号：US5363266A
公开(公告)日：1994-11-08
申请号：US900855
申请日：1992-06-18
申请人： Gary H. Wiseman , William M. Robinson , Jeffrey A. Bennett , Ronald J. Mosso , John T. Fossett
发明人： Gary H. Wiseman , William M. Robinson , Jeffrey A. Bennett , Ronald J. Mosso , John T. Fossett
IPC分类号： H01C7/12 , H01T1/15 , H02H1/00 , H02H3/22
CPC分类号： H01C7/12 , H01T1/15
摘要： A sealed vented surge arrester and method of manufacture is described wherein the valve elements are held under compressive loading while strength members including a moisture sealing void filling compound are pressed fit from the sides of the unit with a shed applied over it. The design achieves all the desirable features of tubular strength members with an ease of manufacture from utilizing half-shell or more members which can be applied from the sides along the longitudinal axis of the valve elements during manufacture to provide better void filling between the structural members and the valve elements.
摘要翻译：描述了一种密封的通风式避雷器及其制造方法，其中将阀元件保持在压缩载荷下，同时包括湿气密封空隙填充料的强度构件从单元的侧面压配合，并施加在其上。该设计实现了管状强度构件的所有期望特征，其易于制造，从而利用半壳或更多构件，其可以在制造期间沿着阀元件的纵向轴线从侧面施加以在结构构件之间提供更好的空隙填充和阀元件。

6. 发明授权

US4482669A Preceramic organosilazane polymers 失效
标题翻译：前陶瓷有机硅氮烷聚合物
公开(公告)号：US4482669A
公开(公告)日：1984-11-13
申请号：US572209
申请日：1984-01-19
申请人： Dietmar Seyferth , Gary H. Wiseman
发明人： Dietmar Seyferth , Gary H. Wiseman
IPC分类号： B01J23/00 , B01J27/00 , B01J31/00 , C01B21/068 , C04B35/571 , C04B35/584 , C04B35/589 , C07F7/10 , C07F7/21 , C08G77/00 , C08G77/48 , C08G77/62 , D01F9/10 , C08K3/34
CPC分类号： C08G77/62 , C04B35/571 , C04B35/584 , C04B35/589
摘要： A preceramic polymer which is a polysilazane is described. It is made by reacting an organodihalosilane with ammonia to form an ammonolysis product, and treating the ammonolysis product with a basic catalyst capable of deprotonating an NH group that is adjacent to an SiH group to form said polymer. The polymer is preferrably further treated with an electrophilic reagent. These polymers are useful for making various ceramic products.
摘要翻译：描述了作为聚硅氮烷的预陶瓷聚合物。通过有机二卤代硅烷与氨反应形成氨解产物，并用能使与SiH基相邻的NH基团去质子化的碱性催化剂处理氨解产物以形成所述聚合物。聚合物优选用亲电试剂进一步处理。这些聚合物可用于制备各种陶瓷产品。

7. 发明授权

US4397828A Stable liquid polymeric precursor to silicon nitride and process 失效
标题翻译：氮化硅稳定的液体聚合物前体和工艺
公开(公告)号：US4397828A
公开(公告)日：1983-08-09
申请号：US321494
申请日：1981-11-16
申请人： Dietmar Seyferth , Christian C. Prud'Homme , Gary H. Wiseman
发明人： Dietmar Seyferth , Christian C. Prud'Homme , Gary H. Wiseman
IPC分类号： C01B21/068 , C01B21/087 , C04B35/589 , C01B33/00 , C01B33/06
CPC分类号： C04B35/589 , C01B21/068 , C01B21/087
摘要： Stable, viscous polymers of silicon, nitrogen and hydrogen are formed by reacting a halosilane with ammonia in the presence of a solvent comprising an aliphatic ether, a chloromethane or mixtures thereof. After the solvent has been removed from the reaction product, the polymer can be poured into a container of desired shape and then can be sintered to form a uniform silicon nitride product.
摘要翻译：通过在包含脂族醚，氯甲烷或其混合物的溶剂的存在下使卤代硅烷与氨反应形成硅，氮和氢的稳定的粘性聚合物。在从反应产物中除去溶剂后，可以将聚合物倒入所需形状的容器中，然后可以烧结以形成均匀的氮化硅产物。

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