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1. 发明申请

US20130084669A1 IN-LINE DEPOSITION SYSTEM AND PROCESS FOR DEPOSITION OF A THIN FILM LAYER 有权
标题翻译：在线沉积系统和沉积薄膜层的工艺
公开(公告)号：US20130084669A1
公开(公告)日：2013-04-04
申请号：US13249818
申请日：2011-09-30
申请人： Russell Weldon Black , Scott Daniel Feldman-Peabody , Christopher Rathweg
发明人： Russell Weldon Black , Scott Daniel Feldman-Peabody , Christopher Rathweg
IPC分类号： H01L31/18 , C23C16/458
CPC分类号： C23C14/26 , C23C14/042 , C23C14/18 , C23C14/50 , C23C14/541 , C23C14/56 , C23C14/568 , C23C14/5806
摘要： An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate is provided. The apparatus includes a receptacle configured to hold a source material and a distribution plate positioned above the receptacle. The distribution plate defines a pattern of passages therethrough. The apparatus also includes a conveyor configured to travel in a continuous loop such that its transfer surface passes above the distribution plate in a first direction to receive thereon sublimated source material passing through the passages of the distribution plate. The conveyor is also configured to travel in a second direction while carrying a substrate on its raised edges. A heating system heats the conveyor while it travels in the second direction to transfer the source material from the transfer surface to the substrate. A process is provided for vapor deposition of a sublimated source material to form thin film.
摘要翻译：提供了一种用于在基板上气相沉积升华的源材料作为薄膜的装置。该设备包括被配置为保持源材料和位于容器上方的分配板的插座。分配板限定了通过其中的通道的图案。该设备还包括一个输送机，该输送机构造成以连续回路运行，使得其转印表面沿着第一方向通过分配板上方，以便接收经过分配板通道的升华的源材料。输送机还构造成在第二方向上行进，同时在其凸起边缘上承载基底。加热系统在沿第二方向行进时加热输送机，以将源材料从转印表面转移到基底。提供了用于气相沉积升华的源材料以形成薄膜的方法。

2. 发明授权

US08430966B2 Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate 有权
标题翻译：气相沉积装置和用于在基底上连续沉积薄膜层的方法
公开(公告)号：US08430966B2
公开(公告)日：2013-04-30
申请号：US12639053
申请日：2009-12-16
申请人： Christopher Rathweg , Max William Reed , Mark Jeffrey Pavol , Scott Daniel Feldman-Peabody , Russell Weldon Black
发明人： Christopher Rathweg , Max William Reed , Mark Jeffrey Pavol , Scott Daniel Feldman-Peabody , Russell Weldon Black
IPC分类号： H01L21/20 , H01L31/18 , C23C16/00
CPC分类号： C23C14/56 , C23C14/24 , C23C14/54 , H01L21/02562 , H01L21/02631 , H01L31/0296 , H01L31/073 , H01L31/1828 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.
摘要翻译：提供了一种装置和相关方法，用于将升华的源材料作为薄膜蒸发沉积在光伏（PV）模块衬底上。容器设置在真空头腔内，并被配置为接收源材料。加热分配歧管设置在容器的下方，并且包括通过其限定的多个通道。容器由分配歧管间接加热到足以升高容器内的源材料的程度。分配板设置在分配歧管下方并且在通过设备输送的基板的水平面上方限定的距离处。分配板包括穿过其的孔的图案，其进一步将通过分配歧管的升华的源材料分布到下面的基底的上表面上。

3. 发明申请

US20120027921A1 VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE 审中-公开
标题翻译：蒸镀沉积装置和在薄膜上连续沉积薄膜层的方法
公开(公告)号：US20120027921A1
公开(公告)日：2012-02-02
申请号：US12975422
申请日：2010-12-22
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Edwin Jackson Little , Mark Jeffrey Pavol , Christopher Rathweg , Max William Reed
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Edwin Jackson Little , Mark Jeffrey Pavol , Christopher Rathweg , Max William Reed
IPC分类号： B05D5/12 , C23C14/26
CPC分类号： H01L31/1828 , C23C14/0629 , C23C14/246 , Y02E10/543 , Y02P70/521
摘要： An apparatus and process for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes at least one receptacle disposed in a deposition head. Each receptacle is configured for receipt of a granular source material. A heating system is configured to heat the receptacle(s) to sublimate the source material. A substantially vertical distribution plate is disposed between the receptacle(s) and a substrate conveyed through the apparatus. The distribution plate is positioned at a defined distance from a vertical conveyance plane of a deposition surface of the substrate. The distribution plate comprises a pattern of passages therethrough that distribute the sublimated source material for deposition onto the deposition surface of the substrate.
摘要翻译：提供了一种用于在光伏模块基板上气相沉积升华的源材料作为薄膜的装置和方法。该装置包括设置在沉积头中的至少一个容器。每个插座被配置为接收粒状源材料。加热系统被配置为加热容器以使源材料升华。基本上垂直的分配板设置在容器和通过设备传送的基板之间。分配板定位在与衬底的沉积表面的垂直输送平面相隔一定距离处。分配板包括通过其的通道的图案，其将升华的源材料分散以沉积到衬底的沉积表面上。

4. 发明授权

US08673777B2 In-line deposition system and process for deposition of a thin film layer 有权
标题翻译：在线沉积系统和沉积薄膜层的工艺
公开(公告)号：US08673777B2
公开(公告)日：2014-03-18
申请号：US13249818
申请日：2011-09-30
申请人： Russell Weldon Black , Scott Daniel Feldman-Peabody , Christopher Rathweg
发明人： Russell Weldon Black , Scott Daniel Feldman-Peabody , Christopher Rathweg
IPC分类号： H01L21/44
CPC分类号： C23C14/26 , C23C14/042 , C23C14/18 , C23C14/50 , C23C14/541 , C23C14/56 , C23C14/568 , C23C14/5806
摘要： An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate is provided. The apparatus includes a receptacle configured to hold a source material and a distribution plate positioned above the receptacle. The distribution plate defines a pattern of passages therethrough. The apparatus also includes a conveyor configured to travel in a continuous loop such that its transfer surface passes above the distribution plate in a first direction to receive thereon sublimated source material passing through the passages of the distribution plate. The conveyor is also configured to travel in a second direction while carrying a substrate on its raised edges. A heating system heats the conveyor while it travels in the second direction to transfer the source material from the transfer surface to the substrate. A process is provided for vapor deposition of a sublimated source material to form thin film.
摘要翻译：提供了一种用于在基板上将升华的源材料作为薄膜气相沉积的装置。所述设备包括被配置为保持源材料和位于所述容器上方的分配板的插座。分配板限定了通过其的通道的图案。该设备还包括一个输送机，该输送机构造成以连续回路运行，使得其转印表面沿着第一方向通过分配板上方，以便接收通过分配板通道的升华的原料。输送机还构造成在第二方向上行进，同时在其凸起边缘上承载基底。加热系统在沿第二方向行进时加热输送机，以将源材料从转印表面转移到基底。提供了用于气相沉积升华的源材料以形成薄膜的方法。

5. 发明申请

US20120003772A1 APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE 有权
标题翻译：形成导电透明氧化物膜层的装置和方法，用于基于薄膜的薄膜光伏器件
公开(公告)号：US20120003772A1
公开(公告)日：2012-01-05
申请号：US12829544
申请日：2010-07-02
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black
IPC分类号： H01L21/283 , F27D3/00
CPC分类号： C23C14/086 , C23C14/56 , C23C14/5806 , C23C14/5846 , H01L31/1884 , Y02E10/50
摘要： Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material.An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.
摘要翻译：通常提供在基板上形成TCO层的方法，包括从包括锡酸镉的靶溅射TCO层在基板上。覆盖材料（例如包括镉）被沉积到间接退火系统的外表面上，并且TCO层可以在退火温度下退火，同时与帽材料接触或在约10cm内。还通常提供退火炉，并且包括限定沉积表面和退火表面的间接退火系统，使得沉积在间接退火系统的退火表面上的盖材料被定位成接触或者在约10cm 基材上的薄膜。盖材料源可以被定位成将盖材料沉积到沉积表面上，使得退火表面包括盖材料。

6. 发明授权

US08361229B2 Seal configuration for a system for continuous deposition of a thin film layer on a substrate 有权
标题翻译：用于在衬底上连续沉积薄膜层的系统的密封构造
公开(公告)号：US08361229B2
公开(公告)日：2013-01-29
申请号：US12765316
申请日：2010-04-22
申请人： Max William Reed , Russell Weldon Black , Scott Daniel Feldman-Peabody , Mark Jeffrey Pavol
发明人： Max William Reed , Russell Weldon Black , Scott Daniel Feldman-Peabody , Mark Jeffrey Pavol
IPC分类号： C23C16/00
CPC分类号： H01L31/1876 , C23C14/0629 , C23C14/24 , C23C14/562 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.
摘要翻译：提供了一种装置和相关联的操作方法，用于将升华的源材料（例如CdTe）蒸发沉积在离散的光伏（PV）模块衬底上，该薄膜以连续且不间断的方式通过该设备输送。该装置包括被配置为用于接收和升华源材料的沉积头。沉积头具有在通过设备内的沉积区域输送的基板的上表面的水平输送平面上方的限定距离处的分布板。升华的源材料通过分布板移动，并且在通过沉积区域被输送时沉积到基板的上表面上。基板通过由横向延伸的入口和出口密封限定的入口和出口槽进入和离开沉积区域。密封件设置在基板的上表面之上的间隙距离处，该距离小于基板的上表面与分布板之间的距离或间隔。密封件具有纵向长度（基板的输送方向）与间隙距离的比例为约10:1至约100:1。

7. 发明授权

US08349144B2 Methods of sputtering using a non-bonded semiconducting target 有权
标题翻译：使用非键合半导体靶的溅射方法
公开(公告)号：US08349144B2
公开(公告)日：2013-01-08
申请号：US12892360
申请日：2010-09-28
申请人： Russell Weldon Black , Robert Dwayne Gossman , Patrick Lynch O'Keefe , Scott Daniel Feldman-Peabody
发明人： Russell Weldon Black , Robert Dwayne Gossman , Patrick Lynch O'Keefe , Scott Daniel Feldman-Peabody
IPC分类号： C23C14/34
CPC分类号： H01J37/34 , H01J37/3414 , H01J37/3426 , H01J37/3435
摘要： A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
摘要翻译：通常提供溅射阴极。溅射阴极可以包括限定溅射表面的半导体靶（例如，硫化镉靶，镉锡氧化物靶等）和与溅射表面相对的后表面。背板可以面向目标的后表面定位，并且不粘合到目标的后表面。非接合附接机构可移除地将靶保持在溅射阴极内，使得背面在溅射期间面向背板。

8. 发明授权

US08236601B2 Apparatus and methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的设备和方法
公开(公告)号：US08236601B2
公开(公告)日：2012-08-07
申请号：US12829544
申请日：2010-07-02
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black
IPC分类号： H01L21/283
CPC分类号： C23C14/086 , C23C14/56 , C23C14/5806 , C23C14/5846 , H01L31/1884 , Y02E10/50
摘要： Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.
摘要翻译：通常提供在基板上形成TCO层的方法，包括从包括锡酸镉的靶溅射TCO层在基板上。覆盖材料（例如包括镉）被沉积到间接退火系统的外表面上，并且TCO层可以在退火温度下退火，同时与帽材料接触或在约10cm内。还通常提供退火炉，并且包括限定沉积表面和退火表面的间接退火系统，使得沉积在间接退火系统的退火表面上的盖材料被定位成接触或者在约10cm 基材上的薄膜。盖材料源可以被定位成将盖材料沉积到沉积表面上，使得退火表面包括盖材料。

9. 发明申请

US20120164784A1 INTEGRATED DEPOSITION OF THIN FILM LAYERS IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC MODULE MANUFACTURE 审中-公开
标题翻译：基于碲化镉的光伏组件制造薄膜层的集成沉积
公开(公告)号：US20120164784A1
公开(公告)日：2012-06-28
申请号：US12977139
申请日：2010-12-23
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Robert Dwayne Gossman , Brian Robert Murphy , Mark Jeffrey Pavol
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Robert Dwayne Gossman , Brian Robert Murphy , Mark Jeffrey Pavol
IPC分类号： H01L31/18 , C23C14/34
CPC分类号： H01L31/073 , H01J37/32899 , H01J37/3402 , H01L21/02562 , H01L21/02631 , Y02E10/543 , Y02P70/521
摘要： Apparatus and processes for thin film deposition of semiconducting layers in the formation of cadmium telluride thin film photovoltaic device are provided. The apparatus includes a series of integrally connected chambers, such as a load vacuum chamber connected to a load vacuum pump; a sputtering deposition chamber; a vacuum buffer chamber; and, a vapor deposition chamber. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through the load vacuum chamber, the sputtering deposition chamber, the vacuum buffer chamber, and the vapor deposition chamber at a controlled speed. The sputtering deposition chamber; the vacuum buffer chamber; and the vapor deposition chamber are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr.
摘要翻译：提供了在形成碲化镉薄膜光伏器件中半导体层的薄膜沉积的装置和工艺。该装置包括一系列整体连接的室，例如连接到负载真空泵的负载真空室; 溅射沉积室; 真空缓冲室; 和蒸镀室。传送系统可操作地设置在设备内，并且被配置用于以受控的速度将串行装置中的基板输送到并通过负载真空室，溅射沉积室，真空缓冲室和气相沉积室。溅射沉积室; 真空缓冲室; 并且蒸镀室一体地连接，使得通过设备输送的基板保持在小于约760托的系统压力。

10. 发明申请

US20120061238A1 SPUTTERING CATHODE HAVING A NON-BONDED SEMICONDUCTING TARGET 有权
标题翻译：具有非结合半导体目标的溅射阴极
公开(公告)号：US20120061238A1
公开(公告)日：2012-03-15
申请号：US12892414
申请日：2010-09-28
申请人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman , Russell Weldon Black , Patrick Lynch O'Keefe
发明人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman , Russell Weldon Black , Patrick Lynch O'Keefe
IPC分类号： C23C14/34
CPC分类号： H01J37/34 , H01J37/3414 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
摘要翻译：通常提供溅射阴极。溅射阴极可以包括限定溅射表面的半导体靶（例如，硫化镉靶，镉锡氧化物靶等）和与溅射表面相对的后表面。背板可以面向目标的后表面定位，并且不粘合到目标的后表面。非接合附接机构可移除地将靶保持在溅射阴极内，使得背面在溅射期间面向背板。

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