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    • 5. 发明授权
    • Suggesting and refining user input based on original user input
    • 根据原始用户输入建议和改进用户输入
    • US09020924B2
    • 2015-04-28
    • US13615518
    • 2012-09-13
    • Jun WuDekang LinZhe QianJie Zhou
    • Jun WuDekang LinZhe QianJie Zhou
    • G06F17/30
    • G06F17/3097G06F17/30389G06F17/3053G06F17/3064
    • Systems and methods to generate modified/refined user inputs based on the original user input, such as a search query, are disclosed. The method may be implemented for Roman-based and/or non-Roman based language such as Chinese. The method may generally include receiving an original user input and identifying core terms therein, determining potential alternative inputs by replacing core term(s) in the original input with another term according to a similarity matrix and/or substituting a word sequence in the original input with another word sequence according to an expansion/contraction table where one word sequence is a substring of the other, computing likelihood of each potential alternative input, and selecting most likely alternative inputs according to a predetermined criteria, e.g., likelihood of the alternative input being at least that of the original input. A cache containing pre-computed original user inputs and corresponding alternative inputs may be provided.
    • 公开了基于原始用户输入(例如搜索查询)生成修改/改进的用户输入的系统和方法。 该方法可以用于基于罗马语和/或非罗马语言的中文。 该方法通常可以包括接收原始用户输入并识别其中的核心术语,通过根据相似度矩阵替换原始输入中的核心项与另一项来确定潜在替代输入和/或替换原始输入中的单词序列 根据扩展/收缩表的另一个字序列,其中一个单词序列是另一个单词序列是另一个单词的子串,计算每个潜在替代输入的可能性,并根据预定标准选择最可能的替代输入,例如替代输入的可能性为 至少是原来的输入。 可以提供包含预先计算的原始用户输入和相应的备选输入的缓存。
    • 6. 发明授权
    • Power factor correction circuit of an electronic ballast
    • 电子镇流器的功率因数校正电路
    • US08836230B2
    • 2014-09-16
    • US13521236
    • 2010-12-29
    • Jun Wu
    • Jun Wu
    • H05B41/24H02M1/42H05B41/28H05B37/00
    • H05B37/00H02M1/42H05B41/28
    • This invention relates to a power factor correction circuit of an electronic ballast. The electronic ballast includes a rectification circuit, a first capacitive element and an inverter. The power factor correction circuit comprises a unidirectional element, an inductive element and a second capacitive element. The unidirectional element is connected in series with the inductive element, and the second capacitive element is connected in parallel with the unidirectional element and the inductive element. A junction of the unidirectional element and the second capacitive element is coupled to a first output terminal of the rectification circuit, a junction of the inductive element and the second capacitive element is coupled to an input terminal of the inverter, and the first capacitive element is coupled between a second output terminal of the rectification circuit and a junction of the unidirectional element and the inductive element.
    • 本发明涉及电子镇流器的功率因数校正电路。 电子镇流器包括整流电路,第一电容元件和逆变器。 功率因数校正电路包括单向元件,电感元件和第二电容元件。 单向元件与电感元件串联连接,第二电容元件与单向元件和电感元件并联连接。 单向元件和第二电容元件的结点耦合到整流电路的第一输出端,​​电感元件和第二电容元件的结点耦合到反相器的输入端,第一电容元件是 耦合在整流电路的第二输出端子和单向元件与感应元件的接点之间。
    • 10. 发明授权
    • LED with improved injection efficiency
    • LED注射效率提高
    • US08525221B2
    • 2013-09-03
    • US12626474
    • 2009-11-25
    • Steven LesterJeff RamerJun WuLing Zhang
    • Steven LesterJeff RamerJun WuLing Zhang
    • H01L33/00
    • H01L33/22H01L21/0237H01L21/0243H01L21/02458H01L21/02494H01L21/02505H01L21/0254H01L21/0262H01L21/02658H01L33/0004H01L33/007H01L33/025H01L33/06H01L33/20H01L33/32
    • A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.
    • 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当p型半导体层的空穴与其中的n型半导体层的电子结合时,有源层发光。 有源层包括多个子层,并且具有多个凹坑,其中多个子层的侧表面与p型半导体材料接触,使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中,而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。