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1. 发明授权

US06524899B1 Process for forming a large area, high gate current HEMT diode 有权
标题翻译：用于形成大面积，高栅极电流HEMT二极管的工艺
公开(公告)号：US06524899B1
公开(公告)日：2003-02-25
申请号：US09667360
申请日：2000-09-21
申请人： Ronald W. Grundbacher , Richard Lai , Mark Kintis , Michael E. Barsky , Roger S. Tsai
发明人： Ronald W. Grundbacher , Richard Lai , Mark Kintis , Michael E. Barsky , Roger S. Tsai
IPC分类号： H01L21338
CPC分类号： H01L29/66143 , H01L21/30612 , H01L29/66462
摘要： A method of manufacturing a HEMT IC using a citric acid etchant. In order that gates of different sizes may be formed with a single etching step, a citric acid etchant is used which includes potassium citrate, citric acid and hydrogen peroxide. The wafer is first spin coated with a photoresist which is then patterned by optical lithography. The wafer is dipped in the etchant to etch the exposed semiconductor material. Metal electrodes are evaporated onto the wafer and the remaining photoresist is removed with solvent.
摘要翻译：使用柠檬酸蚀刻剂制造HEMT IC的方法。为了通过单个蚀刻步骤形成不同尺寸的浇口，使用柠檬酸蚀刻剂，其包括柠檬酸钾，柠檬酸和过氧化氢。首先用光致抗蚀剂旋转晶片，然后通过光学光刻将其形成图案。将晶片浸入蚀刻剂中以蚀刻暴露的半导体材料。将金属电极蒸发到晶片上，并用溶剂除去剩余的光致抗蚀剂。

2. 发明授权

US06396679B1 Single-layer dielectric structure with rounded corners, and circuits including such structures 有权
标题翻译：具有圆角的单层电介质结构，以及包括这种结构的电路
公开(公告)号：US06396679B1
公开(公告)日：2002-05-28
申请号：US09691459
申请日：2000-10-18
申请人： Ronald W. Grundbacher , Richard Lai , Roger S. Tsai , Michael E. Barsky
发明人： Ronald W. Grundbacher , Richard Lai , Roger S. Tsai , Michael E. Barsky
IPC分类号： H01G4228
CPC分类号： H01L28/40
摘要： A single-layer, metal-insulator-metal capacitor, a monolithic microwave integrated circuit including such capacitors, and a process of fabricating such capacitors. The capacitor has a single layer of insulating material between two metallic layers. At least one of the metallic layers has rounded corners, reducing the electric field at the corners, and so lessening the likelihood of breakdown. In one preferred embodiment, each metal layer has rounded corners. The capacitors can be fabricated by an optical lithographic process.
摘要翻译：单层金属绝缘体金属电容器，包括这种电容器的单片微波集成电路以及制造这种电容器的工艺。电容器在两个金属层之间具有单层绝缘材料。金属层中的至少一个具有圆角，减小拐角处的电场，并因此减小击穿的可能性。在一个优选实施例中，每个金属层具有圆角。电容器可以通过光学光刻工艺制造。

3. 发明授权

US07135411B2 Method for etching mesa isolation in antimony-based compound semiconductor structures 有权
标题翻译：在锑基化合物半导体结构中蚀刻台面隔离的方法
公开(公告)号：US07135411B2
公开(公告)日：2006-11-14
申请号：US10918119
申请日：2004-08-12
申请人： Peter S. Nam , Michael D. Lange , Roger S. Tsai
发明人： Peter S. Nam , Michael D. Lange , Roger S. Tsai
IPC分类号： H01L21/306
CPC分类号： H01L29/66462 , H01L21/30621 , H01L29/7783
摘要： Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30–42) formed over the substrate structure (10) are dry etched to form device mesas (12) and the buffer cap (26) provides a desirably smooth mesa floor and electrical isolation around the mesas.
摘要翻译：锑基半导体器件形成在包括锑基缓冲层（24）和锑基缓冲帽（26）的衬底结构（10）上。形成在衬底结构（10）上方的多个外延层（30-42）被干蚀刻以形成器件台面（12），并且缓冲帽（26）提供期望平滑的台面底板和围绕台面的电隔离。

4. 发明授权

US06772400B2 Semi-physical modeling of HEMT high frequency small signal equivalent circuit models 有权
标题翻译： HEMT高频小信号等效电路模型的半物理建模
公开(公告)号：US06772400B2
公开(公告)日：2004-08-03
申请号：US09840600
申请日：2001-04-23
申请人： Roger S. Tsai
发明人： Roger S. Tsai
IPC分类号： G06F1750
CPC分类号： G06F17/5036
摘要： A semi-physical device model for HEMTs that can represent known physical device characteristics and measured high frequency small signal characteristics relatively accurately. The semi-physical device model in accordance with the present invention uses analytical expressions to model the fundamental electric charge and field structure of a HEMT internal structure. These expressions are based on the device physics but are in empirical form. In this way, the model is able to maintain physical dependency with good fidelity while retaining accurate measured-to-modeled DC and small signal characteristics. The model in accordance with the present invention provides model elements for a standard small signal equivalent circuit model of FET. The model elements are derived from small signal excitation analysis of intrinsic charge and electric field as modeled within the device by the semi-physical HEMT model. As such, the RF performance can be predicted at arbitrary bias points.
摘要翻译：用于HEMT的半物理器件模型，可以相对准确地表示已知的物理器件特性和测量的高频小信号特性。根据本发明的半物理设备模型使用解析表达式来模拟HEMT内部结构的基本电荷和场结构。这些表达式基于器件物理学，但是以经验形式。以这种方式，该模型能够保持良好的保真度的物理依赖性，同时保持精确的测量到模型的DC和小信号特征。根据本发明的模型提供了用于FET的标准小信号等效电路模型的模型元件。模型元素来源于通过半物理HEMT模型在器件内建模的固有电荷和电场的小信号激发分析。因此，RF性能可以在任意偏置点预测。

5. 发明授权

US06573744B2 S-parameter microscopy for semiconductor devices 失效
公开(公告)号：US06573744B2
公开(公告)日：2003-06-03
申请号：US09840563
申请日：2001-04-23
申请人： Roger S. Tsai
发明人： Roger S. Tsai
IPC分类号： G01R3126
CPC分类号： H01L22/20 , G01R27/28 , G01R31/2621 , G01R31/28 , G01R31/316 , G06F17/5036
摘要： A method of using bias-dependent S-parameter measurements as a form of microscopy. The microscopy can be used to resolve the details of the internal charge and electric field structure of a semiconductor device. Like other forms of microscopy, the S-parameter microscopy focuses on pseudo “images” and provides a contrast in the “images”. Essentially, the images are gathered in raw form as S-parameter measurements and extracted as small signal models. The models are used to form charge control maps, through a selective method analogous to focusing. Focusing is provided by an algorithm for the unique determination of small signal parameters with contrasts provided by utilizing measured bias dependent activity to discriminate boundaries between the electrical charge and fields. As such, the system is able to accurately forecast semiconductor performance.

6. 发明授权

US06711723B2 Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD 失效
标题翻译：用于大信号和非线性微波/毫米波电路CAD的混合半物理和数据拟合HEMT建模方法
公开(公告)号：US06711723B2
公开(公告)日：2004-03-23
申请号：US09840561
申请日：2001-04-23
申请人： Roger S. Tsai , Yaochung Chen
发明人： Roger S. Tsai , Yaochung Chen
IPC分类号： G06F1750
CPC分类号： G06F17/5036 , G01R31/28 , G01R31/316
摘要： A hybrid model formed from a semi-physical device model along with an accurate data-fitting model in order to implement a relatively accurate physical device model as a large signal microwave circuit computer-aided design (CAD) tool. The semi-physical device model enables accurate representation of known physical device characteristics and measured bias-dependent characteristics. This model is used to accurately simulate the effect of process variation and environmental changes on bias-dependent characteristics. The data-fitting model is used to model these characteristics with relatively good fidelity. The expressions of the model are constructed to be charge conservative. As such, the model is computationally robust within the harmonic balance algorithms employed by known large signal microwave circuit CAD tools.
摘要翻译：由半物理设备模型形成的混合模型以及精确的数据拟合模型，以实现相对准确的物理设备模型作为大信号微波电路计算机辅助设计（CAD）工具。半物理器件模型能够精确表示已知的物理器件特性和测量的偏置相关特性。该模型用于准确模拟过程变化和环境变化对偏置依赖特征的影响。数据拟合模型用于以较好的保真度对这些特征进行建模。模型的表达被构造为电荷保守。因此，该模型在已知的大信号微波电路CAD工具采用的谐波平衡算法中是计算稳健的。

7. 发明授权

US10153273B1 Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same 有权
公开(公告)号：US10153273B1
公开(公告)日：2018-12-11
申请号：US15832377
申请日：2017-12-05
申请人： Roger S. Tsai , Weidong Liu , Yeong-Chang Chou
发明人： Roger S. Tsai , Weidong Liu , Yeong-Chang Chou
IPC分类号： H01L27/06 , H01L29/207 , H01L29/423 , H01L29/778 , H01L29/80 , H01L49/02 , H01L21/8252 , H01L29/66 , H01L21/764 , H01L21/74 , H01L21/285 , H01L21/3213 , H01L23/528 , H01L23/482 , H01L23/66 , H01L29/205
摘要： A semiconductor device is provided that comprises a base structure, a first channel layer overlying the base structure, a second channel layer overlying the first channel layer, and first, second, and third ohmic contacts overlying the second channel layer. The semiconductor device further comprises a metal-semiconductor heterodimension field effect transistor that is formed between the first and second ohmic contacts, the metal-semiconductor heterodimension field effect transistor including a first gate formed through the first and second channel layers. The semiconductor device yet further comprises a high electron mobility transistor formed between the second and third ohmic contacts, the high electron mobility transistor including a second gate formed through the second channel layer without extending through the first channel layer.

8. 发明授权

US06503774B2 Embedding parasitic model for pi-fet layouts 失效
公开(公告)号：US06503774B2
公开(公告)日：2003-01-07
申请号：US09840562
申请日：2001-04-23
申请人： Roger S. Tsai
发明人： Roger S. Tsai
IPC分类号： H01L2100
CPC分类号： H01L22/20 , G01R27/28 , G01R31/2621 , G01R31/28 , G01R31/316 , G06F17/5036 , G06Q30/06
摘要： A model for a semiconductor device and more particularly to a Pi-FET with multiple gate fingers. The model takes into account various parasitics and the inter-relationship therebetween. In particular, multi-finger Pi-FETs are modeled as multiple single finger unit cells. Each single unit cell takes into account off-mesa parasitics, inter-electrode parasitics, on-mesa parasitics and includes an intrinsic model which represents the physics that predominantly determine FET performance. As such, the model can be used for relativity accurate device technology modeling, optimization of device performance and device design.

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