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1. 发明授权

US07501338B1 Semiconductor package substrate fabrication method 有权
标题翻译：半导体封装衬底制造方法
公开(公告)号：US07501338B1
公开(公告)日：2009-03-10
申请号：US11527104
申请日：2006-09-25
申请人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli , Richard Sheridan
发明人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli , Richard Sheridan
IPC分类号： H01L21/4763
CPC分类号： H01L21/4857 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H05K3/0032 , H05K3/0035 , H05K3/107 , H05K3/386 , H05K3/423 , H05K3/465 , H05K3/4664 , H05K7/1061 , H05K2201/0195 , H05K2201/09036 , H01L2924/00014
摘要： An integrated circuit substrate having embedded lands with etching and plating control features provides improved manufacture of a high-density and low cost mounting and interconnect structure for integrated circuits. The integrated circuit substrate is formed by generating channels in a dielectric material, adding conductive material to fill the channels and then planarizing the conductive material, so that conductors are formed beneath the surface of the dielectric material. Lands are formed with feature shapes that reduce a dimpling effect at etching and/or an over-deposit of material during plating, both due to increased current density at the relatively larger land areas. Feature shapes may be a grid formed with line sizes similar to those employed to form conductive interconnects, so that all features on the substrate have essentially the same line width. Alternatively, and in particular for circular pads such as solderball attach lands, sub-features may be radially disposed around a central circular area and connected with channels formed as interconnect lines that connect the sub-features to the central circular area. Connection of the lands may be made using vias or by other conductive channels forming electrical interconnect lines.
摘要翻译：具有带蚀刻和电镀控制特征的嵌入式焊盘的集成电路基板提供了用于集成电路的高密度和低成本安装和互连结构的改进制造。通过在电介质材料中产生通道形成集成电路衬底，添加导电材料以填充沟道，然后使导电材料平坦化，从而在电介质材料的表面之下形成导体。由于在相对较大的陆地区域处的电流密度增加，在地面处形成有减少蚀刻时的凹坑效应和/或电镀期间材料过度沉积的特征形状。特征形状可以是形成为具有与用于形成导电互连的线尺寸相似的线尺寸的网格，使得衬底上的所有特征具有基本上相同的线宽。或者，并且特别是对于诸如焊球附着平台的圆形焊盘，子特征可以径向设置在中心圆形区域周围并且与形成为将子特征连接到中心圆形区域的互连线形成的通道连接。可以使用通孔或形成电互连线的其它导电通道来进行焊盘的连接。

2. 发明授权

US07399661B2 Method for making an integrated circuit substrate having embedded back-side access conductors and vias 有权
标题翻译：制造具有嵌入式背面存取导体和通路的集成电路基板的方法
公开(公告)号：US07399661B2
公开(公告)日：2008-07-15
申请号：US10947124
申请日：2004-09-22
申请人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
发明人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
IPC分类号： H01L21/00 , H01L23/04 , H05K1/11
CPC分类号： H01L21/4857 , H05K3/0035 , H05K3/423 , H05K7/1061
摘要： A method for making an integrated circuit substrate having embedded back-side access conductors and vias provides a high-density mounting and interconnect structure for integrated circuits that is compatible with etched, plated or printed pre-manufactured substrate components. A circuit board or film having a pre-plated, etched or printed circuit, for example a rigid substrate having a Ball Grid Array (BGA) ball-attach pattern, is laser perforated to produce blind vias and/or conductive patterns that provide contact through to conductors of the prefabricated circuit board or film. Existing circuit board and substrate technology is thereby made compatible with laser-embedding technologies, providing the low-cost advantages of existing etching, plating and printing technologies along with a high conductor density associated with laser-embedded circuit technologies.
摘要翻译：用于制造具有嵌入式背面存取导体和通孔的集成电路基板的方法为与蚀刻的，电镀的或印刷的预制衬底部件兼容的集成电路提供了高密度的安装和互连结构。具有预镀，蚀刻或印刷电路（例如具有球栅阵列（BGA）球附着图案的刚性基板）的电路板或膜被激光穿孔以产生盲孔和/或导电图案，其提供接触通过到预制电路板或电影的导体。因此，现有的电路板和衬底技术与激光嵌入技术相兼容，提供了现有蚀刻，电镀和印刷技术的低成本优势以及与激光嵌入式电路技术相关的高导体密度。

3. 发明授权

US07028400B1 Integrated circuit substrate having laser-exposed terminals 有权
标题翻译：具有激光曝光端子的集成电路基板
公开(公告)号：US07028400B1
公开(公告)日：2006-04-18
申请号：US10603878
申请日：2003-06-24
申请人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
发明人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
IPC分类号： H01K3/10
CPC分类号： H05K3/4007 , H05K1/056 , H05K3/0035 , H05K3/107 , H05K3/243 , H05K3/244 , H05K3/28 , H05K3/386 , H05K2201/0394 , H05K2201/09472 , H05K2203/041 , H05K2203/072 , Y10T29/49117 , Y10T29/4913 , Y10T29/49144 , Y10T29/49165
摘要： An integrated circuit substrate having laser-exposed terminals provides a high-density and low cost mounting and interconnect structure for integrated circuits. The laser-exposed terminals can further provide a selective plating feature by using a dielectric layer of the substrate to prevent plating terminal conductors and subsequently exposing the terminals via laser ablation. A metal layer may be coated on one or both sides with a dielectric material, conductive material embedded within the dielectric to form conductive interconnects and then coating over the conductive material with a conformal protective coating. The protectant is then laser-ablated to expose the terminals. A dielectric film having a metal layer laminated on one side may be etched and plated. Terminals are then laser-exposed from the back side of the metal layer exposing unplated terminals.
摘要翻译：具有激光曝光端子的集成电路基板为集成电路提供高密度且低成本的安装和互连结构。激光曝光端子可以通过使用基板的电介质层来进一步提供选择性电镀特征，以防止电镀端子导体，并随后通过激光烧蚀暴露端子。金属层可以在一侧或两侧上用介电材料涂覆，导电材料嵌入电介质内以形成导电互连，然后用保形涂层涂覆在导电材料上。然后将保护剂激光烧蚀以暴露终端。可以对具有层叠在一侧的金属层的电介质膜进行蚀刻和电镀。然后将端子从金属层的背面激光曝光，暴露未镀层的端子。

4. 发明授权

US06930257B1 Integrated circuit substrate having laminated laser-embedded circuit layers 有权
标题翻译：具有层叠的激光嵌入电路层的集成电路基板
公开(公告)号：US06930257B1
公开(公告)日：2005-08-16
申请号：US10392738
申请日：2003-03-19
申请人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
发明人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
IPC分类号： H01L21/48 , H05K3/00 , H05K3/10 , H05K3/38 , H05K3/42 , H05K3/46 , H05K7/10 , H01R12/04 , H05K1/11
CPC分类号： H01L21/4857 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H05K3/0032 , H05K3/0035 , H05K3/107 , H05K3/386 , H05K3/423 , H05K3/465 , H05K3/4664 , H05K7/1061 , H05K2201/0195 , H05K2201/09036 , H01L2924/00014
摘要： An integrated circuit substrate having laminated laser-embedded circuit layers provides a multi-layer high-density mounting and interconnect structure for integrated circuits. A prepared substrate, which may be a rigid double-sided dielectric or film dielectric with conductive patterns plated, etched or printed on one or both sides is laminated with a thin-film dielectric on one or both sides. The thin-film is laser-ablated to form channels and via apertures and conductive material is plated or paste screened into the channels and apertures, forming a conductive interconnect pattern that is isolated by the channel sides and vias through to the conductive patterns on the prepared substrate. An integrated circuit die and external terminals can then be attached to the substrate, providing an integrated circuit having a high-density interconnect.
摘要翻译：具有层叠的激光嵌入电路层的集成电路基板为集成电路提供多层高密度安装和互连结构。制备的衬底，其可以是在一侧或两侧上镀有，蚀刻或印刷的导电图案的刚性双面电介质或膜电介质，其一面或两侧与薄膜电介质层压。薄膜被激光烧蚀以形成通道并且通孔，并且导电材料被电镀或糊化物屏蔽到通道和孔中，形成通过通道侧和通孔隔离的导电互连图案到制备的导电图案基质。然后可以将集成电路管芯和外部端子连接到衬底，从而提供具有高密度互连的集成电路。

5. 发明授权

US08826531B1 Method for making an integrated circuit substrate having laminated laser-embedded circuit layers 有权
标题翻译：制造具有层叠激光嵌入电路层的集成电路基板的方法
公开(公告)号：US08826531B1
公开(公告)日：2014-09-09
申请号：US11098995
申请日：2005-04-05
申请人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
发明人： David Jon Hiner , Ronald Patrick Huemoeller , Sukianto Rusli
IPC分类号： H01R43/00 , H05K13/00
CPC分类号： H05K3/465 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2924/15311 , H05K3/0035 , H05K3/1216 , H05K3/18 , H05K2201/0195 , H05K2203/063 , Y10T29/49117 , Y10T29/49126 , Y10T29/49155 , Y10T29/49169 , H01L2924/00014
摘要： A method for making an integrated circuit substrate having laminated laser-embedded circuit layers provides a multi-layer high-density mounting and interconnect structure for integrated circuits. A prepared substrate, which may be a rigid double-sided dielectric or film dielectric with conductive patterns plated, etched or printed on one or both sides is laminated with a thin-film dielectric on one or both sides. The thin-film is laser-ablated to form channels and via apertures and conductive material is plated or paste screened into the channels and apertures, forming a conductive interconnect pattern that is isolated by the channel sides and vias through to the conductive patterns on the prepared substrate. An integrated circuit die and external terminals can then be attached to the substrate, providing an integrated circuit having a high-density interconnect.
摘要翻译：用于制造具有层叠的激光嵌入电路层的集成电路基板的方法为集成电路提供了多层高密度安装和互连结构。制备的衬底，其可以是在一侧或两侧上镀有，蚀刻或印刷的导电图案的刚性双面电介质或膜电介质，其一面或两侧与薄膜电介质层压。薄膜被激光烧蚀以形成通道并且通孔，并且导电材料被电镀或糊化物屏蔽到通道和孔中，形成通过通道侧和通孔隔离的导电互连图案到制备的导电图案基质。然后可以将集成电路管芯和外部端子连接到衬底，从而提供具有高密度互连的集成电路。

6. 发明授权

US07145238B1 Semiconductor package and substrate having multi-level vias 有权
标题翻译：具有多层通孔的半导体封装和衬底
公开(公告)号：US07145238B1
公开(公告)日：2006-12-05
申请号：US10839647
申请日：2004-05-05
申请人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
发明人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
IPC分类号： H01L23/48
CPC分类号： H01L23/49827 , H01L21/486 , H01L23/49822 , H01L24/48 , H01L2224/16 , H01L2224/16235 , H01L2224/48235 , H01L2924/00011 , H01L2924/00014 , H01L2924/01078 , H01L2924/15173 , H01L2924/15311 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package and substrate having multi-level plated vias provide a high density blind via solution at low incremental cost. Via are half-plated atop a circuit pattern and then a second via half is added to complete the via after isolation of elements of the circuit pattern. Successive resist pattern applications and etching are used to form a via tier atop a circuit pattern that is connected by a thin plane of metal. After the tier is deposited, the thin metal plane is etched to isolate the circuit pattern elements. Dielectric is then deposited and the top half of the via is deposited over the tier. The tier may have a larger or smaller diameter with respect to the other half of the via, so that the via halves may be properly registered. Tin plating may also be used to control the etching process to provide etching control.
摘要翻译：具有多层电镀通孔的半导体封装和衬底以低增量成本提供高密度盲孔解决方案。通孔在电路图案的顶部被半镀，然后添加第二通孔半部以在隔离电路图案的元件之后完成通孔。连续的抗蚀剂图案应用和蚀刻用于在通过金属薄层连接的电路图案之上形成通孔层。在层沉积之后，蚀刻薄金属平面以隔离电路图案元件。然后沉积介质，并将通孔的上半部分沉积在层上。层可以具有相对于通孔的另一半具有更大或更小的直径，使得通孔半部可以被适当地登记。也可以使用镀锡来控制蚀刻工艺以提供蚀刻控制。

7. 发明授权

US08341835B1 Buildup dielectric layer having metallization pattern semiconductor package fabrication method 有权
标题翻译：具有金属化图形半导体封装制造方法的积层电介质层
公开(公告)号：US08341835B1
公开(公告)日：2013-01-01
申请号：US12387691
申请日：2009-05-05
申请人： Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
发明人： Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
IPC分类号： H05K3/30
CPC分类号： H01L21/56 , H01L21/4857 , H01L23/31 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/5389 , H01L23/552 , H01L24/14 , H01L24/19 , H01L24/30 , H01L24/48 , H01L24/73 , H01L24/91 , H01L24/97 , H01L25/0657 , H01L2224/04105 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/73267 , H01L2224/82 , H01L2224/82039 , H01L2224/92 , H01L2224/92244 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , Y10T29/4913 , Y10T29/49146 , Y10T29/49155 , Y10T29/49789 , H01L2224/83 , H01L2224/85 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
摘要翻译：制造半导体封装的方法包括将半导体管芯安装并电连接到衬底。封装半导体管芯和衬底以形成封装。通孔通过封装被激光烧蚀，并且导电材料沉积在通孔内以形成通孔。在封装上形成第一累积电介质层。激光烧蚀的人造物在第一堆积层中被激光烧蚀。在第一堆积层中的激光烧蚀的伪影填充有第一金属层，以在第一堆积层中形成第一导电图案。形成积层的操作，在积层中形成激光烧蚀的伪影，以及用导电材料填充激光烧蚀的伪像以形成导电图案可以进行多次以达到所需的再分配

8. 发明授权

US07548430B1 Buildup dielectric and metallization process and semiconductor package 有权
标题翻译：建立电介质和金属化工艺及半导体封装
公开(公告)号：US07548430B1
公开(公告)日：2009-06-16
申请号：US11497617
申请日：2006-08-01
申请人： Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
发明人： Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
IPC分类号： H05K7/00
CPC分类号： H01L21/56 , H01L21/4857 , H01L23/31 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/5389 , H01L23/552 , H01L24/14 , H01L24/19 , H01L24/30 , H01L24/48 , H01L24/73 , H01L24/91 , H01L24/97 , H01L25/0657 , H01L2224/04105 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/73267 , H01L2224/82 , H01L2224/82039 , H01L2224/92 , H01L2224/92244 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , Y10T29/4913 , Y10T29/49146 , Y10T29/49155 , Y10T29/49789 , H01L2224/83 , H01L2224/85 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
摘要翻译：制造半导体封装的方法包括将半导体管芯安装并电连接到衬底。封装半导体管芯和衬底以形成封装。通孔通过封装被激光烧蚀，并且导电材料沉积在通孔内以形成通孔。在封装上形成第一累积电介质层。激光烧蚀的人造物在第一堆积层中被激光烧蚀。在第一堆积层中的激光烧蚀的伪影填充有第一金属层，以在第一堆积层中形成第一导电图案。形成积层的操作，在积层中形成激光烧蚀的伪影，以及用导电材料填充激光烧蚀的伪像以形成导电图案可以进行多次以达到所需的再分配

9. 发明授权

US07365006B1 Semiconductor package and substrate having multi-level vias fabrication method 有权
标题翻译：具有多级通孔制造方法的半导体封装和衬底
公开(公告)号：US07365006B1
公开(公告)日：2008-04-29
申请号：US11527827
申请日：2006-09-26
申请人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
发明人： Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
IPC分类号： H01L21/4763
CPC分类号： H01L23/49827 , H01L21/486 , H01L23/49822 , H01L24/48 , H01L2224/16 , H01L2224/16235 , H01L2224/48235 , H01L2924/00011 , H01L2924/00014 , H01L2924/01078 , H01L2924/15173 , H01L2924/15311 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package and substrate having multi-level plated vias provide a high density blind via solution at low incremental cost. Via are half-plated atop a circuit pattern and then a second via half is added to complete the via after isolation of elements of the circuit pattern. Successive resist pattern applications and etching are used to form a via tier atop a circuit pattern that is connected by a thin plane of metal. After the tier is deposited, the thin metal plane is etched to isolate the circuit pattern elements. Dielectric is then deposited and the top half of the via is deposited over the tier. The tier may have a larger or smaller diameter with respect to the other half of the via, so that the via halves may be properly registered. Tin plating may also be used to control the etching process to provide etching control.
摘要翻译：具有多层电镀通孔的半导体封装和衬底以低增量成本提供高密度盲孔解决方案。通孔在电路图案的顶部被半镀，然后添加第二通孔半部以在隔离电路图案的元件之后完成通孔。连续的抗蚀剂图案应用和蚀刻用于在通过金属薄层连接的电路图案之上形成通孔层。在层沉积之后，蚀刻薄金属平面以隔离电路图案元件。然后沉积介质，并将通孔的上半部分沉积在层上。层可以具有相对于通孔的另一半具有更大或更小的直径，使得通孔半部可以被适当地登记。也可以使用镀锡来控制蚀刻工艺以提供蚀刻控制。

10. 发明授权

US07190062B1 Embedded leadframe semiconductor package 有权
标题翻译：嵌入式引线框半导体封装
公开(公告)号：US07190062B1
公开(公告)日：2007-03-13
申请号：US10868244
申请日：2004-06-15
申请人： Richard Peter Sheridan , Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
发明人： Richard Peter Sheridan , Ronald Patrick Huemoeller , David Jon Hiner , Sukianto Rusli
IPC分类号： H01L23/02
CPC分类号： H01L23/3128 , H01L24/48 , H01L25/105 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2225/1023 , H01L2225/1041 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package comprising a substrate having opposed top and bottom surfaces and a conductive pattern formed thereon. Disposed on the top surface of the substrate is a semiconductor die which is electrically connected to the conductive pattern. Also disposed on the top surface of the substrate is a leadframe which is electrically connected to the conductive pattern as well. A package body encapsulates the semiconductor die and partially encapsulates the leadframe such that a portion of the leadframe is exposed in one exterior surface of the package body, thus allowing a second semiconductor package to be stacked upon and electrically connected to the semiconductor package.
摘要翻译：一种半导体封装，包括具有相对的顶表面和底表面的基板和形成在其上的导电图案。设置在基板的顶表面上的是与导电图案电连接的半导体管芯。还设置在基板的顶表面上的引线框架也与导电图案电连接。封装体封装半导体管芯并部分地封装引线框架，使得引线框架的一部分暴露在封装主体的一个外表面中，从而允许第二半导体封装层叠在半导体封装上并与之电连接。

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