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2. 发明授权

US4514440A Spin-on dopant method 失效
标题翻译：旋转掺杂剂法
公开(公告)号：US4514440A
公开(公告)日：1985-04-30
申请号：US560473
申请日：1983-12-12
申请人： Bruce H. Justice , Robert F. Aycock
发明人： Bruce H. Justice , Robert F. Aycock
IPC分类号： C30B31/02 , H01L21/225 , B05D5/12 , B05D3/12
CPC分类号： H01L21/2255 , C30B31/02 , H01L21/2252 , Y10S438/92
摘要： A single step method for boron dopant diffusion implementing both deposition and drive-in diffusions in one furnace process is provided. By using a spin-on dopant in a diffusion furnace with pyrogenic steam and thermal ramping capabilities, sheet resistivities and penetrations to a precision and accuracy of 4% with one furnace step are achievable. The one step method disclosed circumvents the use of two furnace processes to achieve a typical p-type diffusion which requires a deposition in a furnace set at one temperature followed by a drive in diffusion in a furnace set at a second temperature after deglazing in a hydrofluoric acid. Also attainable by the one step process disclosed are resistivity uniformities better than those with the two furnace processes.
摘要翻译：提供了在一个炉工艺中实现沉积和驱入扩散的硼掺杂剂扩散的单步法。通过在具有热解蒸汽和热倾斜能力的扩散炉中使用旋涂掺杂剂，可以实现片状电阻率和穿透精度，精度为4％，具有一个炉步骤。所公开的一步法避免了使用两个炉工艺来实现典型的p型扩散，其需要在设置在一个温度的炉中沉积，随后在设置在氢氟酸中的第一温度之后的第二温度中的炉中进行扩散驱动酸。通过所公开的一步工艺也可以获得比具有两个炉工艺的电阻率均匀性更好的电阻率均匀性。

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