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1. 发明授权

US5374328A Method of fabricating group III-V compound 失效
标题翻译： III-V族化合物的制备方法，使用选择性蚀刻的半导体器件
公开(公告)号：US5374328A
公开(公告)日：1994-12-20
申请号：US37074
申请日：1993-03-25
申请人： Ronald D. Remba , Paul E. Brunemeier , Bruce C. Schmukler , Walter A. Strifler , Daniel H. Rosenblatt
发明人： Ronald D. Remba , Paul E. Brunemeier , Bruce C. Schmukler , Walter A. Strifler , Daniel H. Rosenblatt
IPC分类号： C23F1/02 , C09K13/06 , C23F1/16 , C30B33/10 , H01L21/306 , H01L21/308 , H01L21/335 , H01L21/338 , H01L29/812 , B44C1/22
CPC分类号： H01L29/66462 , H01L21/30612
摘要： A solution of hydrogen peroxide [H.sub.2 O.sub.2 ], citric acid [HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O], and a salt of citric acid such as potassium citrate [HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O], and hydrogen peroxide [H.sub.2 O.sub.2 ], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y 0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.
摘要翻译：将过氧化氢[H 2 O 2]，柠檬酸[HOC（CH 2 COOH）2 COOH·H 2 O]和柠檬酸盐如柠檬酸钾[HOC（CH 2 COOK）2 COOK.H 2 O]和过氧化氢[H 2 O 2] 适当的pH范围，在其他III-V族化合物的存在下选择性蚀刻含GaAs的III-V族化合物。作为说明，当蚀刻剂溶液的pH范围在约3和6之间时，在Al x Ga 1-x As（0≤y<0.2> x> 0.2）的存在下，选择性地蚀刻Al y Ga 1-y As。本文所述的蚀刻剂溶液可以用于制造例如表现出改进的饱和电流（Idss）和阈值电压（Vth）均匀性的高频晶体管。

2. 再颁专利

USRE36185E Method of fabricating Group III-V compound semiconductor devices using selective etching 失效
标题翻译：使用选择性蚀刻制造III-V族化合物半导体器件的方法
公开(公告)号：USRE36185E
公开(公告)日：1999-04-06
申请号：US751776
申请日：1996-12-05
申请人： Ronald E. Remba , Paul E. Brunemeier , Bruce C. Schmukler , Walter A. Strifler , Daniel H. Rosenblatt
发明人： Ronald E. Remba , Paul E. Brunemeier , Bruce C. Schmukler , Walter A. Strifler , Daniel H. Rosenblatt
IPC分类号： C23F1/02 , C09K13/06 , C23F1/16 , C30B33/10 , H01L21/306 , H01L21/308 , H01L21/335 , H01L21/338 , H01L29/812 , B44C1/22
CPC分类号： H01L29/66462 , H01L21/30612
摘要： A solution of hydrogen peroxide �H.sub.2 O.sub.2 !, citric acid �HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O!, and a salt of citric acid such as potassium citrate �HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O!, and hydrogen peroxide �H.sub.2 O.sub.2 !, in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y 0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.
摘要翻译：将过氧化氢[H 2 O 2]，柠檬酸[HOC（CH 2 COOH）2 COOH·H 2 O]和柠檬酸盐如柠檬酸钾[HOC（CH 2 COOK）2 COOK.H 2 O]和过氧化氢[H 2 O 2] 适当的pH范围，在其他III-V族化合物的存在下选择性蚀刻含GaAs的III-V族化合物。作为说明，当蚀刻剂溶液的pH范围在约3和6之间时，在Al x Ga 1-x As（0≤y<0.2> x> 0.2）的存在下，选择性地蚀刻Al y Ga 1-y As。本文所述的蚀刻剂溶液可以用于制造例如表现出改进的饱和电流（Idss）和阈值电压（Vth）均匀性的高频晶体管。

3. 发明授权

US4935377A Method of fabricating microwave FET having gate with submicron length 失效
标题翻译：制造具有亚微米长度的栅极的微波FET的方法
公开(公告)号：US4935377A
公开(公告)日：1990-06-19
申请号：US388627
申请日：1989-08-01
申请人： Walter A. Strifler , Brad D. Cantos
发明人： Walter A. Strifler , Brad D. Cantos
IPC分类号： H01L21/338 , H01L29/417 , H01L29/423 , H01L29/812
CPC分类号： H01L29/66863 , H01L29/42316 , H01L29/8128 , Y10S148/143 , Y10S438/944
摘要： Disclosed is a method of forming a uniform length gate electrode and contact for a microwave field-effect transistor where the gate electrode has a length of less than one micron. A photoresist plug is formed on the surface of a first photoresist layer, the plug functioning as a shadow mask in the subsequent deposition of a plasma-etch-resistant material (aluminum) over the surface of the plug and the first photoresist layer. A third photoresist layer is formed over the device structure whereby a contact region can be formed on the surface of the semiconductor sub-strate adjacent to the device region. Subsequently, the third photoresist layer is removed, and the previously shielded photoresist material over the gate electrode location is removed by plasma etch using the metal-covered plug and metal-covered first photoresist layer as a plasma-etch shield. A metal is then deposited in the exposed surface region for the gate electrode and contact, and thereafter the photoresist material is removed leaving the gate electrode and contact on the substrate surface.
摘要翻译：公开了一种形成均匀长度的栅电极和微波场效应晶体管的接触的方法，其中栅电极的长度小于1微米。在第一光致抗蚀剂层的表面上形成光致抗蚀剂插塞，在随后在插塞和第一光致抗蚀剂层的表面上沉积耐等离子体蚀刻材料（铝）时，插塞用作荫罩。在器件结构上形成第三光致抗蚀剂层，由此可以在与器件区域相邻的半导体子步骤的表面上形成接触区域。随后，去除第三光致抗蚀剂层，并且通过使用金属覆盖的塞子和金属覆盖的第一光致抗蚀剂层作为等离子体蚀刻屏蔽层通过等离子体蚀刻去除在栅电极位置上的先前屏蔽的光致抗蚀剂材料。然后将金属沉积在用于栅电极和接触的暴露表面区域中，然后去除留下栅电极的光致抗蚀剂材料并接触在基板表面上。

4. 发明授权

US07345547B2 Bias circuit for BJT amplifier 有权
标题翻译： BJT放大器的偏置电路
公开(公告)号：US07345547B2
公开(公告)日：2008-03-18
申请号：US11253203
申请日：2005-10-17
申请人： Nanlei Larry Wang , Walter A. Strifler
发明人： Nanlei Larry Wang , Walter A. Strifler
IPC分类号： H03G3/30
CPC分类号： H03F1/30 , H03F1/32 , H03F3/191 , H03F3/605 , H03F2200/18 , H03F2200/222 , H03F2200/391 , H03F2200/451
摘要： The embodiments of the present invention include a bias circuit for a power-amplifying device, which receives and amplifies an input RF signal having a series of RF cycles within a modulation envelop. The bias circuit compensates odd-order distortion processes by detecting the power in the input signal and providing a dynamic adjustment to a bias stimulus for the power-amplifying device within a time scale of the modulation envelope.
摘要翻译：本发明的实施例包括用于功率放大装置的偏置电路，其接收并放大在调制包络内具有一系列RF周期的输入RF信号。偏置电路通过检测输入信号中的功率并且在调制包络的时间尺度内为功率放大装置的偏置激励提供动态调整来补偿奇数失真处理。

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