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    • 5. 发明申请
    • Amorphus TiN
    • 无花碱TiN
    • US20050275101A1
    • 2005-12-15
    • US11143953
    • 2005-06-03
    • Stephen BurgessAndrew PriceNicholas RimmerJohn MacNeil
    • Stephen BurgessAndrew PriceNicholas RimmerJohn MacNeil
    • C23C16/34H01L21/285H01L21/4763H01L21/768H01L23/52
    • H01L21/28556C23C16/34H01L21/76843H01L21/76862Y10S257/915
    • A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01
    • 用于沉积薄无定形TiN:Si扩散阻挡层的改性TDEAT(四十二乙基氨基钛)MOCVD前体。 使用TDMAS(三羟甲基氨基硅烷)掺杂10at%的TDEAT; 当混合在一起时,发现两种液体形成稳定的溶液。 沉积通过在加热的基底表面上热蒸发的前体和NH 3 3发生。 实验结果表明,与未改性的TDEAT-NH3反应相比,我们以这种方式修饰了前体,以减少沉积的气相成分。 沉积温度在250-450℃的范围内,并且在一系列工艺条件下,如TEM和XRD分析所示,改性前体显示涂层保形性的改善,电阻率的降低和无定形结构。 SIMS和扫描AES已经显示该膜基本上是Ti:N比率的化学计量,并且包含低水平的C(〜0.4at%)和痕量的掺入Si(0.01
    • 6. 发明授权
    • Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)
    • 通过热化学气相沉积(CVD)形成无定形TiN的方法
    • US07732307B2
    • 2010-06-08
    • US11143953
    • 2005-06-03
    • Stephen Robert BurgessAndrew PriceNicholas RimmerJohn MacNeil
    • Stephen Robert BurgessAndrew PriceNicholas RimmerJohn MacNeil
    • H01L21/20
    • H01L21/28556C23C16/34H01L21/76843H01L21/76862Y10S257/915
    • A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01
    • 用于沉积薄无定形TiN:Si扩散阻挡层的改性TDEAT(四十二乙基氨基钛)MOCVD前体。 使用TDMAS(三羟甲基氨基硅烷)掺杂10at%的TDEAT; 当混合在一起时,发现两种液体形成稳定的溶液。 沉积通过在加热的基底表面上热蒸发的前体和NH 3发生。 实验结果表明,与未改性的TDEAT-NH3反应相比,我们以这种方式修饰了前体,以减少沉积的气相成分。 沉积温度在250-450℃的范围内,并且在一系列工艺条件下,如TEM和XRD分析所示,改性前体显示涂层保形性的改善,电阻率的降低和无定形结构。 SIMS和扫描AES已经表明,该膜基本上是Ti:N比率的化学计量,并且含有低水平的C(〜0.4原子%)和痕量的掺入Si(0.01