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1. 发明申请

US20090170223A1 METHODS FOR CALIBRATING A PROCESS FOR GROWING AN EPITAXIAL SILICON FILM AND METHODS FOR GROWING AN EPITAXIAL SILICON FILM 有权
标题翻译：用于校准生长外延硅膜的方法的方法和用于生长外延硅膜的方法
公开(公告)号：US20090170223A1
公开(公告)日：2009-07-02
申请号：US11964935
申请日：2007-12-27
申请人： Rohit PAL , Alok VAID , Kevin LENSING
发明人： Rohit PAL , Alok VAID , Kevin LENSING
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , C30B25/16 , C30B29/06 , H01L21/02532 , H01L22/20
摘要： Methods are provided for calibrating a process for growing an epitaxial silicon-comprising film and for growing an epitaxial silicon-comprising film. One method comprises epitaxially growing a first silicon-comprising film on a first silicon substrate that has an adjacent non-crystalline-silicon structure that extends from said first silicon substrate. The step of epitaxially growing uses hydrochloric acid provided at a first hydrochloric acid flow rate for a first time period. A morphology of the first film relevant to the adjacent non-crystalline-silicon structure is analyzed and a thickness of the first film is measured. The first flow rate is adjusted to a second flow rate based on the morphology of the first film. The first time period is adjusted to a second time period based on the second flow rate and the thickness. A second silicon-comprising film on a second silicon substrate is epitaxially grown for the second time period using the second flow rate.
摘要翻译：提供了用于校准用于生长外延含硅膜并用于生长外延含硅膜的工艺的方法。一种方法包括在具有从所述第一硅衬底延伸的相邻非晶硅结构的第一硅衬底上外延生长第一含硅膜。外延生长的步骤使用以第一次盐酸流速提供的盐酸第一次。分析与相邻的非晶硅结构相关的第一膜的形态，并测量第一膜的厚度。基于第一膜的形态将第一流量调节到第二流量。基于第二流量和厚度将第一时间段调整到第二时间段。使用第二流量，在第二时间段外延生长第二硅衬底上的第二含硅膜。

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