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    • 3. 发明申请
    • Acoustic method for determining the viscosity and/or surface tension of a liquid
    • 用于确定液体的粘度和/或表面张力的声学方法
    • US20050193805A1
    • 2005-09-08
    • US11088436
    • 2005-03-24
    • Roger WilliamsJames ChiaoHumphrey ChowMichael ForbushAndrew Rose
    • Roger WilliamsJames ChiaoHumphrey ChowMichael ForbushAndrew Rose
    • G01N11/10
    • G01N13/02B41J2/14008G01N11/16
    • The present invention comprises a noncontact method for measuring viscosity and/or surface tension information of a liquid in a liquid containment structure. The steps of the method include exciting a surface of the liquid with an excitation burst of acoustic energy that causes the surface to oscillate; generating a positional data set comprised of a plurality of positional measurements related to the detected position of the surface at a plurality of times after the surface is excited; generating a frequency domain data set from the positional data set, the amplitude spectrum of the frequency domain data set comprising information about the oscillation frequency of at least one vibrational mode of the of the surface as it oscillates; and processing the frequency domain data set and/or the positional data set to yield information about the surface tension and/or viscosity of the liquid. A Fast Fourier Transform technique may be used in generating the frequency domain data set.
    • 本发明包括用于测量液体容纳结构中的液体的粘度和/或表面张力信息的非接触方法。 该方法的步骤包括以引起表面振荡的声能的激发脉冲激发液体的表面; 在所述表面被激发之后,多次生成与所述表面的检测位置有关的多个位置测量值的位置数据集; 从所述位置数据集生成频域数据集,所述频域数据集的振幅谱包括关于所述表面的至少一个振动模式的振荡频率在振荡时的振荡频率的信息; 并且处理频域数据集和/或位置数据集以产生关于液体的表面张力和/或粘度的信息。 快速傅立叶变换技术可用于产生频域数据集。
    • 7. 发明申请
    • Method and device for joining jewelry components
    • 用于加入珠宝组件的方法和装置
    • US20070151294A1
    • 2007-07-05
    • US11305266
    • 2005-12-16
    • Roger Williams
    • Roger Williams
    • A44C7/00
    • A44C7/003
    • In accordance with one or more embodiments of the invention, a method of joining a decorative ornament to an earring base component includes a dapped piece (a meniscus lens shaped piece) of material joined to a threaded tube. An opening in the end of the tube connected to the dapped piece is aligned with a hole in the dapped piece. The support piece is then joined to a decorative ornament. The tube is threaded and receives a threaded rod-like base stud. The threaded base stud passes through the hole in the dapped piece and reaches the threads of the tube. The threaded tube provides alignment and increased support between the base stud and the decorative ornament.
    • 根据本发明的一个或多个实施例,将装饰装饰物连接到耳环底座部件的方法包括连接到螺纹管的材料的开孔件(弯月透镜形状件)。 连接到开孔的管的端部中的开口与开孔件中的孔对准。 然后将支撑件连接到装饰品上。 该管是带螺纹的并且接收一个螺纹杆状基座螺柱。 螺纹底座螺柱穿过开孔中的孔并到达管的螺纹。 螺纹管提供对准和增加的基部螺柱和装饰装饰之间的支撑。
    • 10. 发明授权
    • Electrically quantifying transistor spacer width
    • 电子量子化晶体管间隔物宽度
    • US06287877B1
    • 2001-09-11
    • US09668524
    • 2000-09-22
    • Roger WilliamsMark Brandon FuselierMichael Verne Fenske
    • Roger WilliamsMark Brandon FuselierMichael Verne Fenske
    • G01R3126
    • G01R31/275G01R31/2621
    • A method for electrically quantifying a semiconductor device's spacers' width. In one embodiment, a method comprises the step of measuring a resistance across a region of interest of each of a plurality of semiconductor structures including the semiconductor device in question, where the region of interest may be a source or drain region of the semiconductor structure or may be one of a plurality of lightly doped drain regions of the semiconductor structure. The method further comprises determining a width of one of a plurality of lightly doped drain regions of the semiconductor device from the resistance across the region of interest of each of the plurality of semiconductor structures. The method further comprises determining the semiconductor device's spacers' width from the width of one of the plurality of lightly doped drain regions of the semiconductor device.
    • 一种用于电化学半导体器件间隔物宽度的方法。 在一个实施例中,一种方法包括测量包括所讨论的半导体器件的多个半导体结构中的每一个的感兴趣区域的电阻的步骤,其中感兴趣区域可以是半导体结构的源极或漏极区域,或 可以是半导体结构的多个轻掺杂漏区中的一个。 该方法还包括从跨越多个半导体结构中的每一个的感兴趣区域的电阻确定半导体器件的多个轻掺杂漏极区域中的一个的宽度。 该方法还包括从半导体器件的多个轻掺杂漏区之一的宽度确定半导体器件的间隔物的宽度。