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    • 5. 发明授权
    • Method of making activated carbon composites from supported
crosslinkable resins
    • 由负载的可交联树脂制备活性炭复合材料的方法
    • US5776385A
    • 1998-07-07
    • US806892
    • 1997-02-25
    • Kishor P. GadkareeJoseph F. Mach
    • Kishor P. GadkareeJoseph F. Mach
    • B01J20/20C04B35/83C01B31/00
    • B01J20/20C04B35/83
    • A method for making an activated carbon composite which involves providing a crosslinkable resin and a support material which is wettable by the resin. The support material can be cotton, chopped wood, sisal, non-fugitive material, and combinations of these. The support is contacted with the resin; and the resin and support material are dried. The resin and support material are then shaped, the resin is cured, and the resin and any carbonizable material are carbonized. The carbon is then activated to produce the product composite. An activated carbon composite produced by the above described method in which the carbon is in the form of a continuous structure reinforced by and uniformly distributed throughout non-fugitive support material.
    • 一种制备活性炭复合物的方法,其包括提供可交联树脂和可被树脂润湿的载体材料。 支撑材料可以是棉花,切碎的木材,剑麻,非易失性材料,以及它们的组合。 支撑体与树脂接触; 并干燥树脂和载体材料。 然后树脂和支撑材料成型,树脂固化,并且树脂和任何可碳化的材料被碳化。 然后将碳活化以产生产物复合物。 通过上述方法制备的活性炭复合材料,其中碳是连续结构形式,并且通过非逸散性支撑材料均匀分布并均匀分布。
    • 6. 发明授权
    • System and method for adsorbing contaminants and regenerating the
adsorber
    • 用于吸附污染物和再生吸附剂的系统和方法
    • US5658372A
    • 1997-08-19
    • US500078
    • 1995-07-10
    • Kishor P. Gadkaree
    • Kishor P. Gadkaree
    • B01D53/04
    • B01D53/02B01D2253/102B01D2253/308B01D2253/342B01D2253/3425B01D2257/108B01D2257/504B01D2257/70B01D2257/7022B01D2257/7027B01D2259/40086B01D2259/41Y02C10/08
    • A system for adsorbing a plurality of contaminants from a workstream composed of a first stage open-ended activated carbon monolith adsorber, a second stage open ended activated carbon monolith adsorber downstream of the first stage. The first stage activated carbon has an average pore size that is larger than the average pore size of the second stage activated carbon. A method for removing more than one contaminant from a workstream which involves passing a workstream containing more than one contaminant through a first open ended activated carbon monolith adsorber having a pore size suitable for adsorbing the major portion of the larger size contaminant and for allowing the smaller size contaminant to pass through the monolith, to cause adsorption of the major portion of the larger size contaminant by the activated carbon, while allowing the smaller size contaminant to pass through the first monolith, and thereafter passing the effluent from the first adsorber through a second open ended activated carbon monolith adsorber having a pore size suitable for adsorbing the smaller size contaminant to cause adsorption of the major portion of the smaller size contaminant by the second monolith activated carbon. The adsorbed contaminants can then be desorbed by passing a regenerating stream(s) through the respective monoliths.
    • 一种用于从由第一级开放式活性炭整料吸附器,第二级开放式活性炭整体式吸附器组成的工作流中吸附多种污染物的系统。 第一级活性炭的平均孔径大于第二级活性炭的平均孔径。 一种用于从工作流中除去多于一种污染物的方法,其涉及使含有多于一种污染物的工作流通过具有适于吸附较大尺寸污染物的主要部分的孔径的第一开放式活性炭整料吸附器,并允许较小的 尺寸的污染物通过整料,以引起活性炭对较大尺寸污染物的主要部分的吸附,同时允许较小尺寸的污染物通过第一整料,然后使来自第一吸附器的流出物通过第二 开放式活性炭整体式吸附器具有适于吸附较小尺寸污染物的孔径,以引起较小尺寸污染物主要部分被第二整体活性炭吸附。 然后可以通过将再生流通过相应的整料来解吸吸附的污染物。
    • 10. 发明申请
    • GLASS-BASED SOI STRUCTURES
    • 基于玻璃的SOI结构
    • US20100213582A9
    • 2010-08-26
    • US12328030
    • 2008-12-04
    • James G. CouillardKishor P. GadkareeJoseph F. Mach
    • James G. CouillardKishor P. GadkareeJoseph F. Mach
    • H01L29/12H01L29/02
    • H01L21/76254H01L21/2007
    • Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
    • 提供了包括大面积SOI结构的绝缘体上半导体(SOI)结构,其具有一个或多个由连接到支撑衬底的基本上单晶半导体(例如,掺杂硅)的层(15)组成的区域 20)由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的,并且优选具有小于1000℃的应变点,250℃下的电阻率小于或等于1016&OHgr·-cm,并且包含正离子( 例如碱金属或碱土离子),其可以响应于在升高的温度(例如,300-1000℃)下的电场而在玻璃或玻璃陶瓷内移动。 半导体层(15)和支撑衬底(20)之间的结合强度优选为至少8焦耳/米2。 半导体层(15)可以包括混合区域(16),其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底(20)优选地包括具有降低的可移动正离子浓度的耗尽区(23)。