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1. 发明授权

US07423319B2 LDPMOS structure with enhanced breakdown voltage 有权
公开(公告)号：US07423319B2
公开(公告)日：2008-09-09
申请号：US11646683
申请日：2006-12-28
申请人： Robin Hsieh , Tsai Chun Lin , Albert Yao , Pai-Kang Hsu , Tsung-Yi Huang , Ruey-Hsin Liu
发明人： Robin Hsieh , Tsai Chun Lin , Albert Yao , Pai-Kang Hsu , Tsung-Yi Huang , Ruey-Hsin Liu
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/0619 , H01L29/0638 , H01L29/0653 , H01L29/1083 , H01L29/66659
摘要： A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, a third well region of the second conductivity type adjacent and spaced apart from the first well region, a first deep well region of the second conductivity type underlying at least portions of the first and the second well regions, a second deep well region of the second conductivity type underlying the third well region and spaced apart from the first deep well region, an insulation region in the first well region, a gate dielectric extending from over the insulation region to over the second well region, and a gate electrode on the gate dielectric.

2. 发明申请

US20080157197A1 LDPMOS structure with enhanced breakdown voltage 有权
标题翻译： LDPMOS结构具有增强的击穿电压
公开(公告)号：US20080157197A1
公开(公告)日：2008-07-03
申请号：US11646683
申请日：2006-12-28
申请人： Robin Hsieh , Tsai Chun Lin , Albert Yao , Pai-Kang Hsu , Tsung-Yi Huang , Ruey-Hsin Liu
发明人： Robin Hsieh , Tsai Chun Lin , Albert Yao , Pai-Kang Hsu , Tsung-Yi Huang , Ruey-Hsin Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0619 , H01L29/0638 , H01L29/0653 , H01L29/1083 , H01L29/66659
摘要： A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, a third well region of the second conductivity type adjacent and spaced apart from the first well region, a first deep well region of the second conductivity type underlying at least portions of the first and the second well regions, a second deep well region of the second conductivity type underlying the third well region and spaced apart from the first deep well region, an insulation region in the first well region, a gate dielectric extending from over the insulation region to over the second well region, and a gate electrode on the gate dielectric.
摘要翻译：半导体结构包括覆盖衬底的第一导电类型的第一阱区，覆盖衬底并且横向邻接第一阱区的与第一导电类型相反的第二导电类型的第二阱区，第二阱的第二阱区类型相邻并且与第一阱区间隔开，第二导电类型的第一深阱区域位于第一阱区域和第二阱区域的至少一部分的下面，第二阱区域的第二深阱区域位于第三阱区域下面，以及与第一深阱区间隔开，第一阱区域中的绝缘区域，从绝缘区域延伸到第二阱区域上方的栅极电介质，以及栅极电介质上的栅极电极。

3. 发明申请

US20090256200A1 Disconnected DPW Structures for Improving On-State Performance of MOS Devices 有权
标题翻译：断开的DPW结构，以改善MOS器件的状态性能
公开(公告)号：US20090256200A1
公开(公告)日：2009-10-15
申请号：US12103524
申请日：2008-04-15
申请人： Chih-Wen (Albert) Yao , Puo-Yu Chiang , Tsai Chun Lin , Tsung-Yi Huang
发明人： Chih-Wen (Albert) Yao , Puo-Yu Chiang , Tsai Chun Lin , Tsung-Yi Huang
IPC分类号： H01L29/78
CPC分类号： H01L29/063 , H01L29/0623 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7833 , H01L29/7835 , H01L29/7836
摘要： A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region; a gate dielectric extending from over the first HVW region to over the second HVW region; a gate electrode on the gate dielectric; a drain region in the second HVW region; a source region at an opposite side of the gate dielectric than the drain region; and a deep well region of the first conductivity type underlying the second HVW region. Substantially no deep well region is formed directly underlying the drain region.
摘要翻译：半导体结构包括半导体衬底; 覆盖半导体衬底的第一导电类型的第一高电压阱（HVW）区域; 第二导电类型的第二HVW区域与第一导电类型相反，覆盖在衬底上并横向邻接第一HVW区域; 从第一HVW区域延伸到第二HVW区域上方的栅极电介质; 栅电极上的栅电极; 第二HVW区域中的漏极区域; 栅极电介质的与漏极区相反的一侧的源极区; 以及位于第二HVW区域下方的第一导电类型的深阱区域。基本上没有深沟区直接形成在漏极区下面。

4. 发明授权

US07928508B2 Disconnected DPW structures for improving on-state performance of MOS devices 有权
标题翻译：断开的DPW结构，以改善MOS器件的状态性能
公开(公告)号：US07928508B2
公开(公告)日：2011-04-19
申请号：US12103524
申请日：2008-04-15
申请人： Chih-Wen (Albert) Yao , Puo-Yu Chiang , Tsai Chun Lin , Tsung-Yi Huang
发明人： Chih-Wen (Albert) Yao , Puo-Yu Chiang , Tsai Chun Lin , Tsung-Yi Huang
IPC分类号： H01L29/66
CPC分类号： H01L29/063 , H01L29/0623 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7833 , H01L29/7835 , H01L29/7836
摘要： A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region; a gate dielectric extending from over the first HVW region to over the second HVW region; a gate electrode on the gate dielectric; a drain region in the second HVW region; a source region at an opposite side of the gate dielectric than the drain region; and a deep well region of the first conductivity type underlying the second HVW region. Substantially no deep well region is formed directly underlying the drain region.
摘要翻译：半导体结构包括半导体衬底; 覆盖半导体衬底的第一导电类型的第一高电压阱（HVW）区域; 第二导电类型的第二HVW区域与第一导电类型相反，覆盖在衬底上并横向邻接第一HVW区域; 从第一HVW区域延伸到第二HVW区域上方的栅极电介质; 栅电极上的栅电极; 第二HVW区域中的漏极区域; 栅极电介质的与漏极区相反的一侧的源极区; 以及位于第二HVW区域下方的第一导电类型的深阱区域。基本上没有深沟区直接形成在漏极区下面。

5. 发明授权

US07915677B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
公开(公告)号：US07915677B2
公开(公告)日：2011-03-29
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

6. 发明申请

US20090085101A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090085101A1
公开(公告)日：2009-04-02
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

7. 发明授权

US07476591B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US07476591B2
公开(公告)日：2009-01-13
申请号：US11581178
申请日：2006-10-13
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

8. 发明申请

US20090001462A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090001462A1
公开(公告)日：2009-01-01
申请号：US12205961
申请日：2008-09-08
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

9. 发明授权

US08389341B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US08389341B2
公开(公告)日：2013-03-05
申请号：US13175246
申请日：2011-07-01
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

10. 发明申请

US20120003803A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20120003803A1
公开(公告)日：2012-01-05
申请号：US13175246
申请日：2011-07-01
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

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