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    • 5. 发明授权
    • Pseudo dual-port memory
    • 伪双端口内存
    • US08102721B2
    • 2012-01-24
    • US11768968
    • 2007-06-27
    • Shuwei GuoHui FuLei ZhangXiandi Wan
    • Shuwei GuoHui FuLei ZhangXiandi Wan
    • G11C7/10
    • G06F13/4239
    • A pseudo dual-port memory device is disclosed. One embodiment provides an internal data RAM for a microprocessor, and a method for operating a memory device. In one embodiment, a memory device for a microprocessor or microcontroller comprises: a first part with memory cells that are single-port memory cells; and a second part with memory cells that are dual-port memory cells. In another embodiment, a method for operating a memory device is provided, the memory device including at least one single-port memory and at least one dual-port memory, the method including: accessing the single-port memory of the memory device when a non-conflicting access is to be carried out at the memory device; and accessing the dual-port memory of the memory device when a conflicting access is to be carried out at the memory device.
    • 公开了一种伪双端口存储器件。 一个实施例提供了用于微处理器的内部数据RAM,以及用于操作存储器件的方法。 在一个实施例中,用于微处理器或微控制器的存储器件包括:具有作为单端口存储器单元的存储器单元的第一部分; 以及具有作为双端口存储单元的存储单元的第二部分。 在另一个实施例中,提供了一种用于操作存储设备的方法,所述存储设备包括至少一个单端口存储器和至少一个双端口存储器,所述方法包括:当存储器设备的单端口存储器 在存储设备上将执行非冲突访问; 以及当在存储器设备处执行冲突访问时,访问存储器设备的双端口存储器。
    • 7. 发明申请
    • PSEUDO DUAL-PORT MEMORY
    • PSEUDO双端口存储器
    • US20090003119A1
    • 2009-01-01
    • US11768968
    • 2007-06-27
    • Shuwei GuoHui FuLei ZhangXiandi Wan
    • Shuwei GuoHui FuLei ZhangXiandi Wan
    • G11C8/12
    • G06F13/4239
    • A pseudo dual-port memory device is disclosed. One embodiment provides an internal data RAM for a microprocessor, and a method for operating a memory device. In one embodiment, a memory device for a microprocessor or microcontroller comprises: a first part with memory cells that are single-port memory cells; and a second part with memory cells that are dual-port memory cells. In another embodiment, a method for operating a memory device is provided, the memory device including at least one single-port memory and at least one dual-port memory, the method including: accessing the single-port memory of the memory device when a non-conflicting access is to be carried out at the memory device; and accessing the dual-port memory of the memory device when a conflicting access is to be carried out at the memory device.
    • 公开了一种伪双端口存储器件。 一个实施例提供了用于微处理器的内部数据RAM,以及用于操作存储器件的方法。 在一个实施例中,用于微处理器或微控制器的存储器件包括:具有作为单端口存储器单元的存储器单元的第一部分; 以及具有作为双端口存储单元的存储单元的第二部分。 在另一个实施例中,提供了一种用于操作存储设备的方法,所述存储设备包括至少一个单端口存储器和至少一个双端口存储器,所述方法包括:当存储器设备的单端口存储器 在存储设备上将执行非冲突访问; 以及当在存储器设备处执行冲突访问时,访问存储器设备的双端口存储器。
    • 10. 发明授权
    • Reconfigurable laser header
    • 可重构激光头
    • US06647039B2
    • 2003-11-11
    • US10083838
    • 2002-02-27
    • Hui FuRobert K. Wolf
    • Hui FuRobert K. Wolf
    • H01S304
    • H01S5/02252H01S5/02248H01S5/02272H01S5/02284H01S5/02492H01S5/06804H01S5/0683
    • A reconfigurable laser header assembly, wherein either an n-doped laser substrate structure or a p-doped laser substrate structure can be properly biased, includes a header coupled to a modulated electric (AC) current source, a DC positive bias electric current source, and a DC negative electric current source. A laser is mounted relative to the header, the laser includes a base electric contact and a laser electric contact. An electrical conductor on the header includes first and second metalized regions in electrical connection with the base electric contact, wherein different ones of the modulated electric current source, the bias electric current source, and the DC negative electric current source can be electrically connected to the first metalized region, the second metalized region, and the laser electric contact to properly bias the laser regardless of whether the laser is an n-doped laser substrate structure or a p-doped laser substrate structure.
    • 可重新配置的激光头组件,其中n掺杂激光器衬底结构或p掺杂激光器衬底结构可以被适当地偏置,包括耦合到调制电(AC)电流源,DC正偏置电流源, 和直流负电流源。 相对于集管安装激光器,激光器包括基底电接触和激光电接触。 集管上的电导体包括与基极电接触电连接的第一和第二金属化区域,其中不同的调制电流源,偏置电流源和DC负电流源可以电连接到 第一金属化区域,第二金属化区域和激光电接触件,以适当地偏置激光器,而不管激光器是n掺杂激光器衬底结构还是p掺杂激光器衬底结构。