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1. 发明申请

US20070001318A1 Soldering a die to a substrate 有权
标题翻译：将模具焊接到基板上
公开(公告)号：US20070001318A1
公开(公告)日：2007-01-04
申请号：US11170188
申请日：2005-06-29
申请人： Robert Starkston , Sridhar Narasimhan , Chia-Pin Chiu , Suzana Prstic , Patrick Stover , Hong Xie
发明人： Robert Starkston , Sridhar Narasimhan , Chia-Pin Chiu , Suzana Prstic , Patrick Stover , Hong Xie
IPC分类号： H01L23/48
CPC分类号： H01L24/81 , H01L21/563 , H01L2224/14051 , H01L2224/73203 , H01L2224/81141 , H01L2224/81193 , H01L2224/81345 , H01L2224/81801 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H05K3/303 , H05K3/3436 , H05K3/3457 , H05K2201/094 , H05K2201/09781 , H05K2201/10674 , H05K2203/167 , Y02P70/613
摘要： One example electronic assembly includes a substrate that has a plurality of contacts which become bonded to a plurality of contacts on a die. The electronic assembly further includes a male member that extends from at least one of the substrate and the die and a female member that extends from the other of the substrate and the die. The male member is inserted into the female member to align the die relative to the substrate. The male member and the female member may have any configuration as long as one or more portions of the male member extend partially, or wholly, into the female member. An example method includes aligning a die relative to a substrate by inserting a male member that extends from one of the die and the substrate into a female member that extends from the other of the die and the substrate.
摘要翻译：一个示例性电子组件包括具有多个接触件的基板，该多个触点被结合到模具上的多个触点。电子组件还包括从基板和模具中的至少一个延伸的阳构件和从基板和模具中的另一个延伸的阴构件。将阳构件插入阴构件中以使模具相对于衬底对准。阳构件和阴构件可以具有任何构造，只要阳构件的一个或多个部分部分地或全部地延伸到阴构件中即可。一种示例性方法包括通过将从模具和基板中的一个延伸的阳构件插入从模具和基板中的另一个延伸的凹形构件中来相对于基板对准模具。

2. 发明授权

US07332423B2 Soldering a die to a substrate 有权
标题翻译：将模具焊接到基板上
公开(公告)号：US07332423B2
公开(公告)日：2008-02-19
申请号：US11170188
申请日：2005-06-29
申请人： Robert Starkston , Sridhar Narasimhan , Chia-Pin Chiu , Suzana Prstic , Patrick N Stover , Hong Xie
发明人： Robert Starkston , Sridhar Narasimhan , Chia-Pin Chiu , Suzana Prstic , Patrick N Stover , Hong Xie
IPC分类号： H01L21/44
CPC分类号： H01L24/81 , H01L21/563 , H01L2224/14051 , H01L2224/73203 , H01L2224/81141 , H01L2224/81193 , H01L2224/81345 , H01L2224/81801 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H05K3/303 , H05K3/3436 , H05K3/3457 , H05K2201/094 , H05K2201/09781 , H05K2201/10674 , H05K2203/167 , Y02P70/613
摘要： One example electronic assembly includes a substrate that has a plurality of contacts which become bonded to a plurality of contacts on a die. The electronic assembly further includes a male member that extends from at least one of the substrate and the die and a female member that extends from the other of the substrate and the die. The male member is inserted into the female member to align the die relative to the substrate. The male member and the female member may have any configuration as long as one or more portions of the male member extend partially, or wholly, into the female member. An example method includes aligning a die relative to a substrate by inserting a male member that extends from one of the die and the substrate into a female member that extends from the other of the die and the substrate.
摘要翻译：一个示例性电子组件包括具有多个接触件的基板，该多个触点被结合到模具上的多个触点。电子组件还包括从基板和模具中的至少一个延伸的阳构件和从基板和模具中的另一个延伸的阴构件。将阳构件插入阴构件中以使模具相对于衬底对准。阳构件和阴构件可以具有任何构造，只要阳构件的一个或多个部分部分地或全部地延伸到阴构件中即可。一种示例性方法包括通过将从模具和基板中的一个延伸的阳构件插入从模具和基板中的另一个延伸的凹形构件中来相对于基板对准模具。

3. 发明申请

US20140091474A1 LOCALIZED HIGH DENSITY SUBSTRATE ROUTING 有权
标题翻译：本地化高密度基板路由
公开(公告)号：US20140091474A1
公开(公告)日：2014-04-03
申请号：US13630297
申请日：2012-09-28
申请人： Robert Starkston , Debendra Mallik , John S. Guzek , Chia-Pin Chiu , Deepak Kulkarni , Ravi V. Mahajan
发明人： Robert Starkston , Debendra Mallik , John S. Guzek , Chia-Pin Chiu , Deepak Kulkarni , Ravi V. Mahajan
IPC分类号： H01L21/50 , H01L23/522 , H05K7/00
CPC分类号： H01L23/5226 , H01L21/563 , H01L23/5385 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L2224/0401 , H01L2224/05541 , H01L2224/05568 , H01L2224/0603 , H01L2224/131 , H01L2224/1403 , H01L2224/16225 , H01L2224/16227 , H01L2224/83102 , H01L2924/12042 , H01L2924/15192 , H01L2924/00014 , H01L2924/206 , H01L2924/014 , H01L2924/00
摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.
摘要翻译：本文通常描述用于局部高密度衬底布线的系统和方法的实施例。在一个或多个实施例中，一种装置包括介质，第一和第二电路元件，互连元件和电介质层。该介质可以包括其中的低密度路由。互连元件可以嵌入在介质中，并且可以在其中包括多个导电构件，导电构件可以电耦合到第一电路元件和第二电路元件。互连元件可以包括其中的高密度路由。电介质层可以在互连裸片上方，电介质层包括通过其中的第一和第二电路元件。

4. 发明授权

US09136236B2 Localized high density substrate routing 有权
标题翻译：本地化高密度基板路由
公开(公告)号：US09136236B2
公开(公告)日：2015-09-15
申请号：US13630297
申请日：2012-09-28
申请人： Robert Starkston , Debendra Mallik , John S. Guzek , Chia-Pin Chiu , Deepak Kulkarni , Ravi V. Mahajan
发明人： Robert Starkston , Debendra Mallik , John S. Guzek , Chia-Pin Chiu , Deepak Kulkarni , Ravi V. Mahajan
IPC分类号： H01L23/48 , H01L23/00 , H01L23/538 , H01L25/065 , H01L21/56 , H01L25/18
CPC分类号： H01L23/5226 , H01L21/563 , H01L23/5385 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L2224/0401 , H01L2224/05541 , H01L2224/05568 , H01L2224/0603 , H01L2224/131 , H01L2224/1403 , H01L2224/16225 , H01L2224/16227 , H01L2224/83102 , H01L2924/12042 , H01L2924/15192 , H01L2924/00014 , H01L2924/206 , H01L2924/014 , H01L2924/00
摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.
摘要翻译：本文通常描述用于局部高密度衬底布线的系统和方法的实施例。在一个或多个实施例中，一种装置包括介质，第一和第二电路元件，互连元件和电介质层。该介质可以包括其中的低密度路由。互连元件可以嵌入在介质中，并且可以在其中包括多个导电构件，导电构件可以电耦合到第一电路元件和第二电路元件。互连元件可以包括其中的高密度路由。电介质层可以在互连裸片上方，电介质层包括通过其中的第一和第二电路元件。

5. 发明授权

US4647397A Composition for removing sulfides from industrial gas 失效
标题翻译：用于从工业气体中除去硫化物的组合物
公开(公告)号：US4647397A
公开(公告)日：1987-03-03
申请号：US728439
申请日：1985-04-29
申请人： Robert Starkston , Mark C. Luce , Robert V. Homsy
发明人： Robert Starkston , Mark C. Luce , Robert V. Homsy
IPC分类号： B01D53/14 , C01B17/16 , C09K3/00
CPC分类号： C01B17/167 , B01D53/1493
摘要： Process and composition for removing H.sub.2 S and like sulfides from gas streams by contact with a substituted aromatic nitrile having an electron-attracting substituent on the aromatic ring at least as strong as halogen (e.g., isophthalonitrile) and an organic tertiary amine in an inert organic solvent such as N-methyl-2-pyrrolidone.
摘要翻译：通过与芳族环上具有吸电子取代基的取代的芳香族腈在惰性有机溶剂中至少与卤素（例如间苯二腈）和有机叔胺一样强烈的接触从气流中除去H 2 S等硫化物的方法和组合物例如N-甲基-2-吡咯烷酮。

6. 发明申请

US20050255635A1 Microelectronic assembly having a thermally conductive member with a cavity to contain a portion of a thermal interface material 有权
标题翻译：微电子组件具有带有空腔的导热构件以容纳一部分热界面材料
公开(公告)号：US20050255635A1
公开(公告)日：2005-11-17
申请号：US10846722
申请日：2004-05-13
申请人： Robert Starkston
发明人： Robert Starkston
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/04 , H01L23/34 , H01L23/367 , H01L23/373 , H01L23/485
CPC分类号： H01L24/10 , H01L23/04 , H01L23/3675 , H01L23/3735 , H01L24/13 , H01L24/32 , H01L2224/0401 , H01L2224/04026 , H01L2224/13 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/26175 , H01L2224/27013 , H01L2224/73253 , H01L2224/83051 , H01L2224/83385 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/16152 , H01L2924/1616 , H01L2924/163 , H01L2924/166 , H01L2924/19041 , H01L2924/00
摘要： A thermally conductive member is placed adjacent a microelectronic die with a thermal interface material between the microelectronic die and a wetting layer formed on a surface of the thermally conductive member. The thermal interface material is heated to cause reflow thereof. The first portion of the thermal interface material is directed by the wetting layer into a first cavity formed in the thermally conductive member. The thermal interface material is then allowed to cool and solidify.
摘要翻译：将导热构件放置在微电子管芯附近，在微电子管芯和形成在导热构件的表面上的润湿层之间具有热界面材料。热界面材料被加热以引起其回流。热界面材料的第一部分由润湿层引导到形成在导热构件中的第一空腔中。然后将热界面材料冷却并固化。

7. 发明授权

US6043560A Thermal interface thickness control for a microprocessor 失效
标题翻译：微处理器的热界面厚度控制
公开(公告)号：US6043560A
公开(公告)日：2000-03-28
申请号：US984428
申请日：1997-12-03
申请人： Kevin J. Haley , Niel C. Delaplane , Ravindranath V. Mahajan , Robert Starkston , Charles A. Gealer , Joseph C. Krauskopf
发明人： Kevin J. Haley , Niel C. Delaplane , Ravindranath V. Mahajan , Robert Starkston , Charles A. Gealer , Joseph C. Krauskopf
IPC分类号： H01L23/40 , H01L23/42 , H01L23/30 , H01L23/28 , H01L23/34
CPC分类号： H01L23/42 , H01L23/4006 , H01L2023/4043 , H01L2023/4087 , H01L2924/0002
摘要： A method and apparatus for controlling the thickness of a thermal interface between a processor die and a thermal plate in a microprocessor assembly are provided. The apparatus includes a generally rectangular shaped thermal top cover having a recessed portion of predetermined depth and aperture therein. The thermal top cover fits over the processor die. A thermal interface layer fills the recessed portion of the thermal top cover covering the processor die. The depth of the recessed portion is greater than the thickness of the processor die so that the thickness of the thermal interface layer is controlled. A thermal plate is placed over the thermal top cover in contact with the thermal grease so as to form a thermal path from the processor die to the thermal plate.
摘要翻译：提供了一种用于控制微处理器组件中的处理器管芯和热板之间的热界面的厚度的方法和装置。该装置包括大致矩形的热顶盖，其具有预定深度和孔中的凹部。热顶盖装在处理器模具上。热界面层填充覆盖处理器管芯的热顶盖的凹陷部分。凹部的深度大于处理器管芯的厚度，从而控制热界面层的厚度。将热板放置在与热油脂接触的热顶盖上，以形成从处理器管芯到热板的热路径。

8. 发明授权

US4539189A Method for removing sulfides from industrial gas 失效
标题翻译：从工业气体中除去硫化物的方法
公开(公告)号：US4539189A
公开(公告)日：1985-09-03
申请号：US573242
申请日：1984-01-23
申请人： Robert Starkston , Mark C. Luce , Robert V. Homsy
发明人： Robert Starkston , Mark C. Luce , Robert V. Homsy
IPC分类号： B01D53/14 , C01B17/16 , C01B31/20 , C01C3/00
CPC分类号： C01B17/167 , B01D53/1493
摘要： Process and composition for removing H.sub.2 S and like sulfides from gas streams by contact with a substituted aromatic nitrile having an electron-attracting substituent on the aromatic ring at least as strong as halogen (e.g., isophthalonitrile) and an organic tertiary amine in an inert organic solvent such as N-methyl-2-pyrrolidone.
摘要翻译：通过与芳族环上具有吸电子取代基的取代的芳香族腈在惰性有机溶剂中至少与卤素（例如间苯二腈）和有机叔胺一样强烈的接触从气流中除去H 2 S等硫化物的方法和组合物例如N-甲基-2-吡咯烷酮。

9. 发明授权

US08364304B2 Methods and apparatus for laser scribing wafers 有权
标题翻译：激光划片晶圆的方法和装置
公开(公告)号：US08364304B2
公开(公告)日：2013-01-29
申请号：US12836448
申请日：2010-07-14
申请人： Robert Starkston , Andrew Proctor , Steve Terry
发明人： Robert Starkston , Andrew Proctor , Steve Terry
IPC分类号： H01L21/301 , H01L21/304
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.
摘要翻译：用于从晶片上分离晶片的方法包括在模具的每一侧划分连续线的激光划线，以及在模具的每一侧上激光烧蚀邻近激光划线连续线的区域。在与模具的每一侧相邻的激光划线连续线上的区域中的激光烧蚀彼此间隔开。该方法还包括锯切邻近连续线的激光衰减区域。用于从晶片上分离晶片的方法包括激光刻划第一连续线，激光刻划与第一连续线间隔开的第二连续线，以及激光刻划第三条连续线。位于第一连续线和第二连续线之间的第三连续线。第三连续线与第二连续线和第三连续线重叠。

10. 发明授权

US07772090B2 Methods for laser scribing wafers 有权
标题翻译：激光划片晶圆的方法
公开(公告)号：US07772090B2
公开(公告)日：2010-08-10
申请号：US10674960
申请日：2003-09-30
申请人： Robert Starkston , Andrew Proctor , Steve Terry
发明人： Robert Starkston , Andrew Proctor , Steve Terry
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.
摘要翻译：用于从晶片上分离晶片的方法包括在模具的每一侧划分连续线的激光划线，以及在模具的每一侧上激光烧蚀邻近激光划线连续线的区域。在与模具的每一侧相邻的激光划线连续线上的区域中的激光烧蚀彼此间隔开。该方法还包括锯切邻近连续线的激光衰减区域。用于从晶片上分离晶片的方法包括激光刻划第一连续线，激光刻划与第一连续线间隔开的第二连续线，以及激光刻划第三条连续线。位于第一连续线和第二连续线之间的第三连续线。第三连续线与第二连续线和第三连续线重叠。

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