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    • 3. 发明申请
    • CONTROL SCHEME FOR A MEMORY DEVICE
    • 用于存储器件的控制方案
    • US20080074792A1
    • 2008-03-27
    • US11625235
    • 2007-01-19
    • Robert StarkDonald Adams
    • Robert StarkDonald Adams
    • G11B5/48
    • G11B9/1436B82Y10/00
    • A system for storing information comprises a media die including a frame and a media platform movably coupled with the frame, a media associated with the media platform, one or more capacitive sensors including an electrode fixedly connected with the media platform, and a tip platform including a tip, the tip platform positioned relative to the media platform such that the tip is arrangeable in communicative proximity to the media. The system further comprises circuitry to provide motion signals to urge the media platform relative to the tip platform, the circuitry including a coarse tracking loop, wherein the coarse tracking loop includes a trajectory generator and a primary control loop to adjust a trajectory generated by the trajectory generator based on a measurement from the one or more capacitive sensors.
    • 一种用于存储信息的系统包括:介质模块,包括框架和可移动地与框架耦合的媒体平台,与媒体平台相关联的媒体,一个或多个电容式传感器,包括与介质平台固定连接的电极,以及包括 尖端,尖端平台相对于介质平台定位,使得尖端可布置成与介质通信地邻近。 所述系统还包括提供运动信号以相对于所述尖端平台推动所述媒体平台的电路,所述电路包括粗跟踪环路,其中所述粗跟踪环路包括轨迹发生器和主控制环路,用于调整由所述轨迹产生的轨迹 基于来自所述一个或多个电容式传感器的测量。
    • 4. 发明申请
    • High density data storage devices having servo indicia formed in a patterned media
    • 具有在图案化介质中形成的伺服标记的高密度数据存储装置
    • US20060291271A1
    • 2006-12-28
    • US11192716
    • 2005-07-29
    • Robert StarkGhassan TchelepiDonald Adams
    • Robert StarkGhassan TchelepiDonald Adams
    • G11C11/00
    • G11C23/00G11B9/04G11B9/065G11B9/149G11C11/56G11C11/5678G11C13/0004
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a servo pattern, an inhibiting matrix having a plurality of cells disposed within the inhibiting matrix, wherein the servo pattern is defined at least partially by the plurality of cells. A data portion amongst which the servo pattern is disposed can further be defined within the inhibiting matrix. Alternatively, the data portion can include a continuous media. A tip including a conductive contact surface can be positioned in contact or near-contact with the plurality of cells, and a voltage potential can be applied across the media from the tip. A resistance of the at least one cell is then detectable. In an embodiment, the resistance of the at least one cell can be lower than a data indicium within the continuous media or within a patterned media, thereby identifying the cell as a servo mark. In an embodiment the at least one cell can be a read-only cell having a conductive material disposed within the cell. Alternatively, the at least one cell can be a write-once cell including a switchable material. A large current can be driven through the write-one cell to form an effectively permanent servo mark, the servo mark having a resistance smaller than a resistance of an indicium.
    • 根据本发明的系统可以包括可与介质接触的末端,所述介质包括伺服图案,具有设置在所述禁止矩阵内的多个单元的抑制矩阵,其中所述伺服图案至少部分地由所述多个 细胞。 其中设置有伺服图案的数据部分可以进一步限定在禁止矩阵内。 或者,数据部分可以包括连续媒体。 可以将包括导电接触表面的尖端定位成与多个单元接触或接近接触,并且可以从尖端跨越介质施加电压电位。 然后可以检测至少一个细胞的电阻。 在一个实施例中,至少一个单元的电阻可以低于连续介质内或图案化介质内的数据标记,从而将单元识别为伺服标记。 在一个实施例中,至少一个单元可以是具有布置在单元内的导电材料的只读单元。 或者,至少一个单元可以是包括可切换材料的一次写入单元。 可以通过写一个单元驱动大电流以形成有效永久的伺服标记,伺服标记的电阻小于标记的电阻。
    • 9. 发明申请
    • Media for writing highly resolved domains
    • 撰写高度解决的域的媒体
    • US20070041237A1
    • 2007-02-22
    • US11177550
    • 2005-07-08
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • G11C11/00
    • G11C13/02B82Y10/00G11B9/04G11B9/08G11B9/149G11C13/0004G11C23/00
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
    • 根据本发明的系统可以包括与介质接触的尖端,所述介质包括设置在基底和外涂层之间的实施例中的相变材料(或其它实施例中的极性相关的记忆材料或其它记忆材料)。 外涂层是具有导电部分和基本上非导电部分的共沉积膜,共沉积膜通过外涂层比通过外涂层更有效地传导电流。 外涂层基本上引导电流,使得直接在尖端下方的相变材料的一部分被加热到足够的温度,使得材料的结构变得无序。 然后将电流从相变材料中去除,其被快速冷却以形成具有大于结晶体结构的电阻率的畴。