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1. 发明授权

US5721194A Tuneable microwave devices including fringe effect capacitor incorporating ferroelectric films 失效
标题翻译：可调谐微波器件，包括掺入铁电薄膜的边缘效应电容器
公开(公告)号：US5721194A
公开(公告)日：1998-02-24
申请号：US480164
申请日：1995-06-07
申请人： Robert M. Yandrofski , John Charles Price , Frank Barnes , Allen M. Hermann , James Floyd Scott
发明人： Robert M. Yandrofski , John Charles Price , Frank Barnes , Allen M. Hermann , James Floyd Scott
IPC分类号： H01G7/06 , H01P1/18 , H01P7/08 , H01Q1/36 , H01Q3/44 , H01B12/02
CPC分类号： H01P7/082 , H01G7/06 , H01P1/181 , H01P7/084 , H01P7/088 , H01Q1/364 , H01Q3/44 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： The present invention relates to a tuneable fringe effect capacitor for conducting radio frequency energy. The capacitor includes a thin film of ferroelectric material, a pair of films of a conductive material deposited on the ferroelectric film with a gap between the films, and a substrate for the ferroelectric material and the conductive films. The capacitance value across the gap is varied by applying a voltage to the ferroelectric material and thereby altering the dielectric constant of the ferroelectric material.
摘要翻译：本发明涉及一种用于进行射频能量的可调式边缘效应电容器。电容器包括铁电材料薄膜，沉积在铁电薄膜上的一对导电材料薄膜，薄膜之间具有间隙，以及用于铁电材料和导电膜的基板。跨越间隙的电容值通过向铁电体材料施加电压并从而改变铁电材料的介电常数来改变。

2. 发明申请

US20090309090A1 Nanostructures and a Method for the Manufacture of the Same 审中-公开
标题翻译：纳米结构及其制造方法
公开(公告)号：US20090309090A1
公开(公告)日：2009-12-17
申请号：US12297824
申请日：2007-04-20
申请人： Robert Morrison Bowman , Robert James Pollard , John Martin Gregg , Finlay Doogan Morrison , James Floyd Scott
发明人： Robert Morrison Bowman , Robert James Pollard , John Martin Gregg , Finlay Doogan Morrison , James Floyd Scott
IPC分类号： H01L29/06 , H01L21/44 , G11C11/22
CPC分类号： G11C11/22 , H01L27/0805 , H01L28/55 , H01L28/65 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/16
摘要： A nanostructure comprising a first structure comprising conductive material, which is attached to a second structure comprising one or more portions of conductive material separated by insulator material, which is attached to a third structure comprising a material in which a change can be effected. The third structure may comprise a dielectric or ferroelectric material, and the change effected in the material may be polarization of the material. The nanostructure may comprise one or more nanocapacitors, each of which comprises a part of the third structure in which a change comprising polarization may be effected. The nanocapacitors may be used to store data.
摘要翻译：一种纳米结构，其包括包含导电材料的第一结构，该第一结构附着到由绝缘体材料分离的导电材料的一个或多个部分的第二结构，该第二结构附着到第三结构，该第三结构包括能够进行变化的材料。第三结构可以包括电介质或铁电材料，并且在材料中影响的变化可以是材料的极化。纳米结构可以包括一个或多个纳米电容器，每个纳米电容器包括其中可以实现包括极化的改变的第三结构的一部分。纳米电容器可用于存储数据。

3. 发明授权

US09299485B1 Micro and nanoscale magnetoelectric multiferroic lead iron tantalate-lead zirconate titanate 有权
标题翻译：微型和纳米级磁电多铁铅铅钽酸铅锆钛酸铅
公开(公告)号：US09299485B1
公开(公告)日：2016-03-29
申请号：US14511011
申请日：2014-10-09
申请人： Ram S Katiyar , Ashok Kumar , Nora Patricia Ortega , Dilsom Alberto Sanchez , James Floyd Scott , Donald Malcolm Evans , John Martin Gregg
发明人： Ram S Katiyar , Ashok Kumar , Nora Patricia Ortega , Dilsom Alberto Sanchez , James Floyd Scott , Donald Malcolm Evans , John Martin Gregg
IPC分类号： G11C11/00 , H01F1/03 , G11C11/16 , C23C14/18
CPC分类号： H01F1/407 , C23C14/088 , C23C14/28 , G11C11/15 , G11C11/22
摘要： The invention is a novel class of materials made by combining the best qualities of both lead iron tantalate (PFT) and lead iron titanate (PZT) to synthesize (PbZr0.53Ti0.47O3)(1-x)—(PbFe0.5Ta0.5O3)x (PZTFT) (0.1≦x≦0.9) compositions that have multiferroic (ferroelectric and ferromagnetic) and magnetoelectric properties.
摘要翻译：本发明是通过将钽酸铅铁（PFT）和钛酸铅（PZT）的最佳质量结合合成（PbZr0.53Ti0.47O3）（1-x） - （PbFe0.5Ta0.5O3））x（PZTFT）（0.1＆nlE; x＆nlE; 0.9）具有多铁性（铁电和铁磁）和磁电性质的组合物。

4. 发明授权

US07678409B2 Deposition of layers on substrates 失效
标题翻译：在基材上沉积层
公开(公告)号：US07678409B2
公开(公告)日：2010-03-16
申请号：US10544889
申请日：2004-02-05
申请人： Finlay Doogan Morrison , James Floyd Scott
发明人： Finlay Doogan Morrison , James Floyd Scott
IPC分类号： B05D5/12
CPC分类号： C30B7/00 , C30B29/30 , C30B29/60 , C30B33/00 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997
摘要： A process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n is provided comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having a fill fraction of at least 60%. Fill fractions of close to l00% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.
摘要翻译：提供了用显示电压依赖折射率n的材料填充或衬垫多孔硅，二氧化硅或氧化铝基底的孔的方法，包括提供沉积材料的前体作为前体溶液，形成细小的雾滴前体溶液并将液滴施加到多孔基材上。本发明首次提供填充率为至少60％的多孔硅，二氧化硅和氧化铝基底。可以达到接近100％的分数。当设置有顶部和底部电极时，填充的多孔硅，二氧化硅和氧化铝晶片可以用作依赖于电压的光子器件。相同的工艺可以用于在硅衬底的表面中衬衬沟槽，例如用于生产诸如随机存取存储器的微电子器件。

5. 发明授权

US07611578B2 Processes of forming small diameter rods and tubes 失效
标题翻译：形成小直径棒和管的工艺
公开(公告)号：US07611578B2
公开(公告)日：2009-11-03
申请号：US10544816
申请日：2004-02-05
申请人： Finlay Doogan Morrison , James Floyd Scott
发明人： Finlay Doogan Morrison , James Floyd Scott
IPC分类号： C30B21/02
CPC分类号： G02B6/1225 , B82Y20/00 , H01L41/317
摘要： The invention provides a method for the production of a photonic device comprising providing a substrate, forming in the substrate substantially straight pores, lining or filling the pores with a material having voltage-dependent index of refraction, and removing part but not all of the substrate materials so that an array remains of tubes or rods of material having voltage-dependent index of refraction. In a variant of the method the deposited material is piezoelectric and the substrate is completely removed, resulting in piezoelectric tubes or rods of small diameter, generally below 10 μm.
摘要翻译：本发明提供了一种用于制造光子器件的方法，其包括提供衬底，在衬底中基本上直孔，衬里或用具有电压依赖折射率的材料填充孔，并且去除部分但不是全部衬底材料，使得阵列保留有具有电压依赖折射率的材料的管或棒。在该方法的变型中，沉积材料是压电的，并且基底被完全去除，导致小直径的压电管或棒，通常低于10um。

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