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1. 发明授权

US08217436B2 Single photon avalanche diodes 有权
标题翻译：单光子雪崩二极管
公开(公告)号：US08217436B2
公开(公告)日：2012-07-10
申请号：US12498874
申请日：2009-07-07
申请人： Robert K. Henderson , Justin Richardson
发明人： Robert K. Henderson , Justin Richardson
IPC分类号： H01L31/062
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。

2. 发明申请

US20100019295A1 SINGLE PHOTON AVALANCHE DIODES 有权
标题翻译：单光子AVALANCHE二极管
公开(公告)号：US20100019295A1
公开(公告)日：2010-01-28
申请号：US12498874
申请日：2009-07-07
申请人： Robert K. Henderson , Justin Richardson
发明人： Robert K. Henderson , Justin Richardson
IPC分类号： H01L29/866 , H01L27/14 , H01L27/06
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。

3. 发明授权

US08552482B2 Single photon avalanche diodes 有权
标题翻译：单光子雪崩二极管
公开(公告)号：US08552482B2
公开(公告)日：2013-10-08
申请号：US13454811
申请日：2012-04-24
申请人： Robert K. Henderson , Justin Richardson
发明人： Robert K. Henderson , Justin Richardson
IPC分类号： H01L31/113
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。

4. 发明申请

US20120205731A1 SINGLE PHOTON AVALANCHE DIODES 有权
标题翻译：单光子AVALANCHE二极管
公开(公告)号：US20120205731A1
公开(公告)日：2012-08-16
申请号：US13454811
申请日：2012-04-24
申请人： Robert K. Henderson , Justin Richardson
发明人： Robert K. Henderson , Justin Richardson
IPC分类号： H01L27/14
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。

5. 发明授权

US08477222B2 Method and apparatus for exposure level setting in machine vision systems 有权
标题翻译：机器视觉系统中曝光度设置的方法和装置
公开(公告)号：US08477222B2
公开(公告)日：2013-07-02
申请号：US11559113
申请日：2006-11-13
申请人： Justin Richardson
发明人： Justin Richardson
IPC分类号： H04N5/235
CPC分类号： H04N5/35554 , G06K7/10722 , G06K7/10752 , H04N5/3532
摘要： In a solid state image sensor having a pixel array, a first frame is imaged using varying exposure times in a series of zones. The exposure time for a subsequent frame is selected from the results of the first frame, The exposure times are controlled in a rolling blade manner by controlling the number of lines between reset and readout. The sensor is particularly suited to use in bar code readers.
摘要翻译：在具有像素阵列的固态图像传感器中，在一系列区域中使用变化的曝光时间对第一帧进行成像。从第一帧的结果中选择后续帧的曝光时间。通过控制复位和读出之间的行数，以滚动刀片的方式控制曝光时间。传感器特别适用于条码阅读器。

6. 发明申请

US20100133636A1 SINGLE PHOTON DETECTOR AND ASSOCIATED METHODS FOR MAKING THE SAME 有权
标题翻译：单光子检测器及其相关方法
公开(公告)号：US20100133636A1
公开(公告)日：2010-06-03
申请号：US12327240
申请日：2008-12-03
申请人： Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Christiano Niclass , Robert Henderson
发明人： Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Christiano Niclass , Robert Henderson
IPC分类号： H01L31/00
CPC分类号： H01L31/107
摘要： A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
摘要翻译：半导体器件包括半导体衬底，半导体衬底中的光子雪崩检测器。光子雪崩检测器包括第一导电类型的阳极和第二导电类型的阴极。保护环在半导体衬底中并且至少部分地围绕光子雪崩检测器。第一导电类型的钝化层与保护环接触以减少光子雪崩检测器边缘处的电场。

7. 发明申请

US20080272453A1 OPTICAL DEVICE COOLING APPARATUS AND METHOD 审中-公开
标题翻译：光学装置冷却装置和方法
公开(公告)号：US20080272453A1
公开(公告)日：2008-11-06
申请号：US12112325
申请日：2008-04-30
申请人： Justin Richardson
发明人： Justin Richardson
IPC分类号： H01L31/024 , H01L31/18
CPC分类号： H01L31/024 , H04N5/2252 , H04N5/2253 , H04N5/374
摘要： An optical device cooling apparatus includes an image sensor array and a MEMS fan. The MEMS fan is formed integrally with the image sensor array, and cools the image sensor array.
摘要翻译：光学装置冷却装置包括图像传感器阵列和MEMS风扇。 MEMS风扇与图像传感器阵列一体形成，并且冷却图像传感器阵列。

8. 发明申请

US20110302504A1 Mobile Application for Proximity Based Awareness System 审中-公开
标题翻译：基于接近感知系统的移动应用
公开(公告)号：US20110302504A1
公开(公告)日：2011-12-08
申请号：US13156119
申请日：2011-06-08
申请人： Santosh Khare , Kiran Modak , Justin Richardson
发明人： Santosh Khare , Kiran Modak , Justin Richardson
IPC分类号： G06F3/01
CPC分类号： H04L51/32 , G06Q50/01 , H04L67/306 , H04W4/023
摘要： A proximity-based awareness system that includes a mobile computing device for each user and a system server in communication with the mobile devices. The system server may enable the user to create and edit a personal profile; broadcast the profile to another user; enable the user to search for and view another's personal profile and an event profile; bookmark an interesting event and an interesting user based on keywords; store a profile image or profile video associated with the user, and designate a virtual presence at a location. Each mobile device includes a processor that may determine the location of the user; provide an interface to enable the user to interact with the system server, transmit information to the system server, and display information received from the system server; and allow the user to enter keywords. As such, the system allows users to become aware of other nearby users.
摘要翻译：一种基于邻近感知系统，其包括用于每个用户的移动计算设备和与移动设备通信的系统服务器。系统服务器可以使用户能够创建和编辑个人简档; 将配置文件广播到另一个用户; 使用户能够搜索和查看他人的个人资料和事件简档; 根据关键字为一个有趣的活动和有趣的用户添加书签; 存储与用户相关联的简档图像或简档视频，并且在一个位置指定虚拟存在。每个移动设备包括可以确定用户的位置的处理器; 提供接口，使用户能够与系统服务器进行交互，向系统服务器发送信息，并显示从系统服务器接收的信息; 并允许用户输入关键字。因此，系统允许用户了解其他附近的用户。

9. 发明授权

US07898001B2 Single photon detector and associated methods for making the same 有权
标题翻译：单光子探测器及相关方法制作相同
公开(公告)号：US07898001B2
公开(公告)日：2011-03-01
申请号：US12327240
申请日：2008-12-03
申请人： Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Cristiano Niclass , Robert Henderson
发明人： Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Cristiano Niclass , Robert Henderson
IPC分类号： H01L31/0328
CPC分类号： H01L31/107
摘要： A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
摘要翻译：半导体器件包括半导体衬底，半导体衬底中的光子雪崩检测器。光子雪崩检测器包括第一导电类型的阳极和第二导电类型的阴极。保护环在半导体衬底中并且至少部分地围绕光子雪崩检测器。第一导电类型的钝化层与保护环接触以减少光子雪崩检测器边缘处的电场。

10. 发明授权

US08493474B2 Memory-enhanced image sensor 有权
公开(公告)号：US08493474B2
公开(公告)日：2013-07-23
申请号：US11623515
申请日：2007-01-16
申请人： Justin Richardson
发明人： Justin Richardson
IPC分类号： H04N5/76
CPC分类号： H04N5/378 , H01L27/14601 , H04N5/335 , H04N5/367
摘要： An image sensor IC may have a non-volatile memory for several functions. The functions may include storing control parameters for a camera autofocus module, part tracking data, and data for defect correction or color science. The non-volatile memory can in particular be an antifuse non-volatile memory, which may not need special light shielding.

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