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    • 5. 发明申请
    • 'Method for Calibrating Read Sensors of Electromagnetic Read-Write Heads'
    • “电磁读写头读取传感器校准方法”
    • US20120283976A1
    • 2012-11-08
    • US13099360
    • 2011-05-03
    • David BermanDylan Joseph BodayIcko E.T. IbenWayne Isami ImainoStephen Leonard SchwartzAnna Wanda TopolDaniel James Winarski
    • David BermanDylan Joseph BodayIcko E.T. IbenWayne Isami ImainoStephen Leonard SchwartzAnna Wanda TopolDaniel James Winarski
    • G06F19/00
    • G01R35/00G01N27/04G01N27/72G01N33/53G01R33/0035G01R33/1207
    • Described are embodiments to ensure that the equipment utilized to detect antigens is reliable and accurate. If it is determined that a read sensor is degraded a method of calibrating a read sensor of a read head is described. In one embodiment, a method of calibrating a magnetic read sensor includes measuring a first resistance of the magnetic read sensor upon an application of a forward bias current to the magnetic read sensor and measuring a second resistance of the magnetic read sensor upon an application of a reverse bias current to the magnetic read sensor. A calibration constant is determined based on at least the first measured resistance and the second measured resistance. In one embodiment the method further includes storing the determined calibration constant for the magnetic read sensor in memory. Further, in one embodiment the head module having the magnetic read sensor is swept over at least one nanoparticle to obtain a read response of the magnetic read sensor to the nanoparticle. The read response from the magnetic read sensor of the at least one nanoparticle is adjusted based on the determined calibration constant. Calibration of each individual read sensor allows for uniform read responses from each of the read sensors on a read head, and prevents unreliable an inaccurate detection of analytes due to sensor degradation.
    • 描述了确保用于检测抗原的设备是可靠和准确的实施方案。 如果确定读取传感器劣化,则描述校准读取头的读取传感器的方法。 在一个实施例中,一种校准磁性读取传感器的方法包括:在向磁性读取传感器施加正向偏置电流时测量磁性读取传感器的第一个电阻,并测量磁性读取传感器的应用时的第二个电阻 反向偏置电流到磁性读取传感器。 基于至少第一测量电阻和第二测量电阻来确定校准常数。 在一个实施例中,该方法还包括将所确定的磁读取传感器的校准常数存储在存储器中。 此外,在一个实施例中,具有磁读取传感器的头模块扫过至少一个纳米颗粒,以获得磁读取传感器对纳米颗粒的读取响应。 基于所确定的校准常数来调整来自至少一个纳米颗粒的磁读取传感器的读取响应。 每个单独的读取传感器的校准允许来自读取头上的每个读取传感器的均匀的读取响应,并且防止由于传感器劣化而导致的分析物不可靠的检测不可靠。
    • 8. 发明申请
    • TUNNEL JUNCTION RESISTOR FOR HIGH RESISTANCE DEVICES AND SYSTEMS USING THE SAME
    • 用于高电阻装置和系统的隧道连接电阻器
    • US20090289626A1
    • 2009-11-26
    • US12123989
    • 2008-05-20
    • Icko E.T. Iben
    • Icko E.T. Iben
    • G01R33/02H01L29/06
    • G01R33/098G11B5/00826G11B5/40G11B5/6094H01L27/22
    • A device in one embodiment includes a plurality of tunnel junction resistors coupled in series; a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series. A device in another embodiment includes a magnetoresistive sensor; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the magnetoresistive sensor to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the magnetoresistive sensor to another end of the plurality of tunnel junction resistors coupled in series. A system in yet another embodiment includes a semiconductor device; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the semiconductor device to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the semiconductor device to another end of the plurality of tunnel junction resistors coupled in series.
    • 一个实施例中的器件包括串联耦合的多个隧道结电阻器; 耦合到串联耦合的多个隧道结电阻器的一端的第一引线; 以及耦合到串联耦合的多个隧道结电阻器的另一端的第二引线。 另一实施例中的器件包括磁阻传感器; 串联耦合的多个隧道结电阻; 第一引线将磁阻传感器的一端耦合到串联耦合的多个隧道结电阻器的一端; 以及第二引线将磁阻传感器的另一端耦合到串联耦合的多个隧道结电阻器的另一端。 另一个实施例中的系统包括半导体器件; 串联耦合的多个隧道结电阻; 将所述半导体器件的一端耦合到串联耦合的所述多个隧道结电阻器的一端的第一引线; 以及将半导体器件的另一端耦合到串联耦合的多个隧道结电阻器的另一端的第二引线。