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1. 发明授权

US4596208A CVD reaction chamber 失效
标题翻译： CVD反应室
公开(公告)号：US4596208A
公开(公告)日：1986-06-24
申请号：US667989
申请日：1984-11-05
申请人： Robert G. Wolfson , Stanley M. Vernon
发明人： Robert G. Wolfson , Stanley M. Vernon
IPC分类号： C23C16/46
CPC分类号： C23C16/4411 , C23C16/46
摘要： An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided with a concentric gas inlet, a cooled base plate supporting the reaction tube and provided with a gas outlet, and a tapered susceptor operatively supported within the reaction tube, in close proximity to its tapered top and defining an angle therebetween. This angle varies from zero to about nineteen degrees and preferably is between ten to seventeen degrees. Preferably, the susceptor is rotatably and replaceably supported by a hollow rod, axially accommodating therein a thermocouple for monitoring the temperature within the reaction tube. The tapered top of the reaction tube can be shaped like a cone or like a pyramid with planar side surfaces.
摘要翻译：公开了一种用于CVD的改进的反应室，其结合了已知水平和垂直设计的有利特征，同时最小化其各自的缺点。改进的反应室基本上包括垂直的双壁反应管，其具有设置有同心气体入口的锥形顶部，支撑反应管并设置有气体出口的冷却底板和可操作地支撑在反应管内的锥形基座，紧邻其锥形顶部并且在其间限定一个角度。该角度从零到大约十九度变化，优选在十到十七度之间。优选地，基座可旋转地和可替换地由中空杆支撑，轴向地容纳有用于监测反应管内的温度的热电偶。反应管的锥形顶部可以成形为具有平坦侧表面的锥体或类似金字塔。

2. 发明授权

US4443488A Plasma ion deposition process 失效
标题翻译：等离子体离子沉积工艺
公开(公告)号：US4443488A
公开(公告)日：1984-04-17
申请号：US312712
申请日：1981-10-19
申请人： Roger G. Little , Robert G. Wolfson , Stanley J. Solomon
发明人： Roger G. Little , Robert G. Wolfson , Stanley J. Solomon
IPC分类号： C23C16/503 , C30B25/10 , H01L21/205 , B05D3/06
CPC分类号： C23C16/503 , C30B25/105 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/0262
摘要： A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.
摘要翻译：直接在低成本非晶衬底上的大颗粒，薄半导体膜的等离子体离子沉积工艺，其包括通过电子支撑的大体积，低压，高温等离子体在腔室中电离半导体基气态化合物。从化合物中提取半导体离子并沉积在基底上。优选地，沉积首先以缓慢的沉积速率进行，随后是更高的沉积速率。允许沉积的离子聚结成晶格簇，通过进一步沉积将簇生长成基底上的大颗粒，薄的半导体膜。优选地，基于半导体的气态化合物包括具有掺杂剂原子源气体的硅烷气体。

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