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1. 发明授权

US07919834B2 Edge seal for thru-silicon-via technology 有权
标题翻译：通过硅通孔技术的边缘密封
公开(公告)号：US07919834B2
公开(公告)日：2011-04-05
申请号：US11949986
申请日：2007-12-04
申请人： Robert Edgar Davis , Robert Daniel Edwards , J. Edwin Hostetter, Jr. , Ping-Chuan Wang , Kimball M. Watson
发明人： Robert Edgar Davis , Robert Daniel Edwards , J. Edwin Hostetter, Jr. , Ping-Chuan Wang , Kimball M. Watson
IPC分类号： H01L29/40 , H01L23/04
CPC分类号： H01L21/76898 , H01L21/6835 , H01L21/76852 , H01L23/481 , H01L24/02 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/28 , H01L24/94 , H01L2221/68331 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/274 , H01L2924/0002 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2224/05552
摘要： One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.
摘要翻译：在硅通孔（TSV）上形成一个或多个多层背面冶金（BSM）堆叠结构。多层金属可以包括在半导体晶片背面上的铬的粘合层，铜的导电层，镍的扩散阻挡层和诸如金的诺贝尔金属层。为了防止切割后铜的边缘侵蚀，形成镍层以密封铜边缘。为了防止切割后镍层的边缘侵蚀，形成金层以密封铜层和镍层。

2. 发明授权

US07238565B2 Methodology for recovery of hot carrier induced degradation in bipolar devices 有权
标题翻译：在双极器件中回收热载体诱导的降解的方法
公开(公告)号：US07238565B2
公开(公告)日：2007-07-03
申请号：US10904985
申请日：2004-12-08
申请人： Fernando Guarin , J. Edwin Hostetter, Jr. , Stewart E. Rauch, III , Ping-Chuan Wang , Zhijian J. Yang
发明人： Fernando Guarin , J. Edwin Hostetter, Jr. , Stewart E. Rauch, III , Ping-Chuan Wang , Zhijian J. Yang
IPC分类号： H01L21/8249
CPC分类号： H01L29/7304 , H01L29/7378
摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (V″CB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.
摘要翻译：提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。在本发明的另一个实施例中，退火步骤是在低于雪崩状况（V“CB”）的情况下向双极晶体管提供高正向电流（围绕峰值fT电流或更大）的结果，小于1V）。在上述条件下，可以回收约40％以上的降解。在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。

3. 发明授权

US07723824B2 Methodology for recovery of hot carrier induced degradation in bipolar devices 有权
标题翻译：在双极器件中回收热载体诱导的降解的方法
公开(公告)号：US07723824B2
公开(公告)日：2010-05-25
申请号：US11744621
申请日：2007-05-04
申请人： Fernando Guarin , J. Edwin Hostetter, Jr. , Stewart E. Rauch, III , Ping-Chuan Wang , Zhijian J. Yang
发明人： Fernando Guarin , J. Edwin Hostetter, Jr. , Stewart E. Rauch, III , Ping-Chuan Wang , Zhijian J. Yang
IPC分类号： H01L29/73
CPC分类号： H01L29/7304 , H01L29/7378
摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (VCB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.
摘要翻译：提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。在本发明的另一个实施例中，退火步骤是在低于雪崩条件（VCB小于1V）的情况下向双极晶体管提供高正向电流（围绕峰值fT电流或更大）的结果。在上述条件下，可以回收约40％以上的降解。在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。

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