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    • 3. 发明申请
    • RECTIFIER CIRCUIT INCLUDING A SELF-CLAMPING TRANSISTOR
    • 整流电路包括一个自锁钳晶体管
    • US20160380554A1
    • 2016-12-29
    • US15116542
    • 2014-12-01
    • Robert Bosch GmbH
    • Markus BaurAlfred Goerlach
    • H02M7/217H03K17/0814
    • H02M7/217H03K17/08142H03K17/302H03K2017/307H03K2217/0081
    • A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.
    • 描述了一种整流器电路,其包括阴极端子,阳极端子以及阴极端子和阳极端子之间的电子电路,该电子电路包括至少一个包括集成反向二极管的MOSFET晶体管,漏极 - 源极击穿电压 MOSFET晶体管以与整流电路的阴极端子和阳极端子之间的钳位电压相对应的雪崩模式工作。 此外,提供了一种用于操作整流器电路的方法,该整流器电路包含阴极端子,阳极端子以及阴极端子和阳极端子之间的至少一个MOSFET晶体管,其包括集成反向二极管,漏极 - 源极击穿电压 MOSFET晶体管根据阴极端子和阳极端子之间的钳位电压被选择,并且MOSFET晶体管以雪崩模式操作。