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1. 发明授权

US09539736B2 Mechanical method for producing micro- or nano-scale textures 有权
标题翻译：用于生产微米或纳米尺度纹理的机械方法
公开(公告)号：US09539736B2
公开(公告)日：2017-01-10
申请号：US13569153
申请日：2012-08-07
申请人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
发明人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
IPC分类号： B24B1/00 , B26D3/08 , B26D3/06
CPC分类号： B26D3/08 , B26D3/06 , H01L2251/105 , Y10T83/0333 , Y10T83/0341
摘要： A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).
摘要翻译：用于生产微尺度和纳米尺度织构的机械方法，其例如在大规模生产基片上，例如在薄膜太阳能电池的大规模生产过程中有助于例如成本有效地生产纳米结构。 “刮刀”（多点磨损机构）被保持在相对于目标基板的精确位置，使得从刮刀基部结构延伸的微米级特征（突起）被精确地定位成与目标基板的表面材料层接触以预定量的力，然后相对于基底（例如，通过输送机构）移动，同时保持挤压力，使得微米级特征限定细长的平行纳米级凹槽和/或形成纳米尺度表面材料层中的隆起（即，通过机械移位）表面材料层的部分以形成纳米尺度的沟槽/脊）。

2. 发明授权

US08673750B2 Single crystal silicon TFTs made by lateral crystallization from a nanowire seed 有权
标题翻译：由纳米线种子横向结晶制成的单晶硅TFT
公开(公告)号：US08673750B2
公开(公告)日：2014-03-18
申请号：US13330516
申请日：2011-12-19
申请人： Robert A. Street , Sourobh Raychaudhuri
发明人： Robert A. Street , Sourobh Raychaudhuri
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/66772
摘要： A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the metal island and form a metal droplet from the metal island. The method can also include growing a nanowire on the substrate using the metal droplet as a catalyst, depositing a thin film of a semiconductor material on the sample, annealing the sample to allow for lateral crystallization to form a crystal grain, and patterning the crystal grain to establish a crystal island. An electronic device can be fabricated using the crystal island.
摘要翻译：一种方法可以包括在样品的衬底上沉积薄金属膜，通过图案化薄金属膜在衬底上建立金属岛，并对样品退火以使金属岛脱湿并从金属岛形成金属液滴。该方法还可以包括使用金属液滴作为催化剂在衬底上生长纳米线，在样品上沉积半导体材料的薄膜，退火样品以允许横向结晶以形成晶粒，以及图案化晶粒建立一个水晶岛。可以使用晶体岛制造电子器件。

3. 发明申请

US20140041504A1 Mechanical Method For Producing Micro- Or Nano-Scale Textures 有权
标题翻译：用于生产微尺度或纳米尺度纹理的机械方法
公开(公告)号：US20140041504A1
公开(公告)日：2014-02-13
申请号：US13569153
申请日：2012-08-07
申请人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
发明人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
IPC分类号： B26D3/08
CPC分类号： B26D3/08 , B26D3/06 , H01L2251/105 , Y10T83/0333 , Y10T83/0341
摘要： A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).
摘要翻译：用于生产微尺度和纳米尺度织构的机械方法，其例如在大规模生产基片上，例如在薄膜太阳能电池的大规模生产过程中有助于例如成本有效地生产纳米结构。 “刮刀”（多点磨损机构）被保持在相对于目标基板的精确位置，使得从刮刀基部结构延伸的微米级特征（突起）被精确地定位成与目标基板的表面材料层接触以预定量的力，然后相对于基底（例如，通过输送机构）移动，同时保持挤压力，使得微米级特征限定细长的平行纳米级凹槽和/或形成纳米尺度表面材料层中的隆起（即，通过机械移位）表面材料层的部分以形成纳米尺度的沟槽/脊）。

4. 发明申请

US20130157447A1 SINGLE CRYSTAL SILICON TFTS MADE BY LATERAL CRYSTALLIZATION FROM A NANOWIRE SEED 有权
标题翻译：单晶硅片通过从南瓜籽的边缘结晶制成的单晶硅TFTS
公开(公告)号：US20130157447A1
公开(公告)日：2013-06-20
申请号：US13330516
申请日：2011-12-19
申请人： Robert A. Street , Sourobh Raychaudhuri
发明人： Robert A. Street , Sourobh Raychaudhuri
IPC分类号： H01L21/20
CPC分类号： H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/66772
摘要： A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the metal island and form a metal droplet from the metal island. The method can also include growing a nanowire on the substrate using the metal droplet as a catalyst, depositing a thin film of a semiconductor material on the sample, annealing the sample to allow for lateral crystallization to form a crystal grain, and patterning the crystal grain to establish a crystal island. An electronic device can be fabricated using the crystal island.
摘要翻译：一种方法可以包括在样品的衬底上沉积薄金属膜，通过图案化薄金属膜在衬底上建立金属岛，并对样品退火以使金属岛脱湿并从金属岛形成金属液滴。该方法还可以包括使用金属液滴作为催化剂在衬底上生长纳米线，在样品上沉积半导体材料的薄膜，退火样品以允许横向结晶以形成晶粒，以及图案化晶粒建立一个水晶岛。可以使用晶体岛制造电子器件。

5. 发明申请

US20110073840A1 RADIAL CONTACT FOR NANOWIRES 审中-公开
公开(公告)号：US20110073840A1
公开(公告)日：2011-03-31
申请号：US12571339
申请日：2009-09-30
申请人： Michael L. Chabinyc , William S. Wong , Sourobh Raychaudhuri
发明人： Michael L. Chabinyc , William S. Wong , Sourobh Raychaudhuri
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/41733 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/78696
摘要： An embodiment is a method and apparatus of radial contact using nanowires. An inner contact has a center. An outer contact surrounds the inner contact around the center and is spaced from the inner contact by a channel length. A nanowire connects the center of the inner contact and the outer contact in a rotationally invariant geometry.Another embodiment is a method and apparatus of a semiconductor device with bottom gate structure and having radial contact using nanowires. A gate electrode is deposited on a substrate. A dielectric layer is deposited on the substrate and the gate electrode. A source-drain assembly is deposited on the dielectric layer. The source-drain assembly has source and drain electrodes connected via a nanowire in a rotationally invariant geometry.Another embodiment is a method and apparatus of a semiconductor device with top gate structure and having radial contact using nanowires. An isolation barrier layer is deposited on a substrate. A source-drain assembly is deposited on the substrate and within the isolation barrier layer. The source-drain assembly has source and drain electrodes connected via a nanowire in a rotationally invariant geometry. A dielectric layer is deposited on the source-drain assembly. A gate electrode is deposited on the dielectric layer.Another embodiment is a method and apparatus of a semiconductor device having radial contact using nanowires of short lengths. Source and drain electrodes are fabricated having a contact structure with a rotationally invariant geometry. The contact structure has inner and outer contacts corresponding to the source and drain electrodes, respectively. The outer contact is spaced from the inner contact by a channel length. Wells are formed in vicinity of the contact structure. A suspension is placed in the wells. The suspension has single or multiple nanowires having a short length in a liquid. An alternating current (AC) source is applied to the contact structure to cause the single or multiple nanowires to align and connect the inner contact to the outer contact. The AC source has a first terminal connected to the inner contact and a second terminal not connected to the inner and outer contacts.

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