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1. 发明申请

US20110253981A1 METHOD OF MANUFACTURING A VERTICAL TFET 有权
标题翻译：制造垂直TFET的方法
公开(公告)号：US20110253981A1
公开(公告)日：2011-10-20
申请号：US13083387
申请日：2011-04-08
申请人： Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
发明人： Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
IPC分类号： H01L27/092 , H01L21/8238 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/7391 , B82Y10/00 , H01L21/823885 , H01L29/0665 , H01L29/165 , H01L29/267 , H01L29/66356
摘要： The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.
摘要翻译：本公开提供了一种用于制造至少一个纳米线隧道场效应晶体管（TFET）半导体器件的方法。该方法包括提供包括沟道材料层的堆叠，其顶部具有牺牲材料层，从堆叠中去除材料，以便从沟道材料层和牺牲材料层形成至少一个纳米线，并且代替通过异质结材料在至少一个纳米线中的牺牲材料。根据本公开的实施例的方法是有利的，因为其能够容易地制造互补的TFET。

2. 发明授权

US08415209B2 Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device 有权
标题翻译：互补纳米线隧道场效应晶体管半导体器件的制造方法
公开(公告)号：US08415209B2
公开(公告)日：2013-04-09
申请号：US13083387
申请日：2011-04-08
申请人： Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
发明人： Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
IPC分类号： H01L21/84
CPC分类号： H01L29/7391 , B82Y10/00 , H01L21/823885 , H01L29/0665 , H01L29/165 , H01L29/267 , H01L29/66356
摘要： The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.
摘要翻译：本公开提供了一种用于制造至少一个纳米线隧道场效应晶体管（TFET）半导体器件的方法。该方法包括提供包括沟道材料层的堆叠，其顶部具有牺牲材料层，从堆叠中去除材料，以便从沟道材料层和牺牲材料层形成至少一个纳米线，并且代替通过异质结材料在至少一个纳米线中的牺牲材料。根据本公开的实施例的方法是有利的，因为其能够容易地制造互补的TFET。

3. 发明授权

US08576614B2 Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor 有权
标题翻译：隧道晶体管，包括晶体管的逻辑门，使用逻辑门的静态随机存取存储器和用于制造这样的隧道晶体管的方法
公开(公告)号：US08576614B2
公开(公告)日：2013-11-05
申请号：US13587733
申请日：2012-08-16
申请人： Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
发明人： Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
IPC分类号： G11C11/00
CPC分类号： H01L29/7391 , B82Y10/00 , H01L27/11 , H01L27/11803 , H01L29/0657 , H01L29/66977 , H01L29/7831 , H01L29/78648 , H01L29/78684
摘要： A tunnel transistor is provided including a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.
摘要翻译：提供隧道晶体管，其包括漏极，源极和至少第一栅极，用于控制漏极和源极之间的电流，其中分别地第一和第二栅极电介质材料的第一侧基本上沿着并基本上接触第一和第二半导体部件。

4. 发明申请

US20130064005A1 TUNNEL TRANSISTOR, LOGICAL GATE COMPRISING THE TRANSISTOR, STATIC RANDOM-ACCESS MEMORY USING THE LOGICAL GATE AND METHOD FOR MAKING SUCH A TUNNEL TRANSISTOR 有权
标题翻译：隧道晶体管，包含晶体管的逻辑门，使用逻辑门的静态随机存取存储器和制造这样的隧道晶体管的方法
公开(公告)号：US20130064005A1
公开(公告)日：2013-03-14
申请号：US13587733
申请日：2012-08-16
申请人： Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
发明人： Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
IPC分类号： H03K19/094 , H01L21/336 , G11C11/40 , H01L29/78
CPC分类号： H01L29/7391 , B82Y10/00 , H01L27/11 , H01L27/11803 , H01L29/0657 , H01L29/66977 , H01L29/7831 , H01L29/78648 , H01L29/78684
摘要： A tunnel transistor is provided comprising a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.
摘要翻译：提供隧道晶体管，其包括漏极，源极和至少第一栅极，用于控制漏极和源极之间的电流，其中分别地第一和第二栅极电介质材料的第一侧基本上沿着基本上接触并基本上接触第一和第二半导体部件。

5. 发明授权

US08404545B2 Tunnel field-effect transistor with gated tunnel barrier 有权
标题翻译：具有门控隧道势垒的隧道场效应晶体管
公开(公告)号：US08404545B2
公开(公告)日：2013-03-26
申请号：US13353607
申请日：2012-01-19
申请人： William G. Vandenberghe , Anne S. Verhulst
发明人： William G. Vandenberghe , Anne S. Verhulst
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/7391
摘要： A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced).
摘要翻译：公开了隧道场效应晶体管（TFET）。在一个方面，晶体管包括不与漏极对准的栅极，并且仅与至少延伸到源极沟道区域的界面的源重叠并且可选地与沟道的一部分重叠。由于较短的栅极，总栅极电容减小，这直接反映在器件的改进的开关速度。除了提高开关速度的优点之外，晶体管还具有处理优点（不需要栅极与漏极的对准），以及性能改善（TFET的双极性能降低）。

6. 发明申请

US20120115296A1 TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER 有权
标题翻译：隧道场效应晶体管与栅极隧道栅
公开(公告)号：US20120115296A1
公开(公告)日：2012-05-10
申请号：US13353607
申请日：2012-01-19
申请人： William G. Vandenderghe , Anne S. Verhulst
发明人： William G. Vandenderghe , Anne S. Verhulst
IPC分类号： H01L21/336 , B82Y40/00
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/7391
摘要： A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced).
摘要翻译：公开了隧道场效应晶体管（TFET）。在一个方面，晶体管包括不与漏极对准的栅极，并且仅与至少延伸至源极沟道区域的界面的源重叠，并且可选地与沟道的一部分重叠。由于较短的栅极，总栅极电容减小，这直接反映在器件的改进的开关速度。除了改进的开关速度的优点之外，晶体管还具有处理优点（不需要栅极与漏极的对准），以及性能改进（TFET的双极性特性降低）。

7. 发明申请

US20080224224A1 TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER 有权
标题翻译：隧道场效应晶体管与栅极隧道栅
公开(公告)号：US20080224224A1
公开(公告)日：2008-09-18
申请号：US12044719
申请日：2008-03-07
申请人： William G. Vandenderghe , Anne S. Verhulst
发明人： William G. Vandenderghe , Anne S. Verhulst
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/7391
摘要： A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced).
摘要翻译：公开了隧道场效应晶体管（TFET）。在一个方面，晶体管包括不与漏极对准的栅极，并且仅与至少延伸到源极沟道区域的界面的源重叠并且可选地与沟道的一部分重叠。由于较短的栅极，总栅极电容减小，这直接反映在器件的改进的开关速度。除了提高开关速度的优点之外，晶体管还具有处理优点（不需要栅极与漏极的对准），以及性能改善（TFET的双极性能降低）。

8. 发明授权

US08232517B2 Wavelength-sensitive detector comprising photoconductor units each having different types of elongated nanostructures 有权
标题翻译：波长敏感检测器包括各自具有不同类型的细长纳米结构的光电导体单元
公开(公告)号：US08232517B2
公开(公告)日：2012-07-31
申请号：US12574531
申请日：2009-10-06
申请人： Anne S. Verhulst , Wilfried Vandervorst
发明人： Anne S. Verhulst , Wilfried Vandervorst
IPC分类号： H01L31/00
CPC分类号： H01L31/0352 , H01L31/09 , Y10S977/954
摘要： A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.
摘要翻译：提供了一种基于细长纳米结构的波长敏感检测器，例如。纳米线细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极。添加电路以读取光电导体单元的电信号。每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

9. 发明申请

US20120045879A1 TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTRUCTURES HAVING A HETEROSTRUCTURE 有权
标题翻译：基于具有异构结构的直链单结构纳米结构的隧道效应晶体管
公开(公告)号：US20120045879A1
公开(公告)日：2012-02-23
申请号：US13286936
申请日：2011-11-01
申请人： Anne S. Verhulst , William G. Vandenberghe
发明人： Anne S. Verhulst , William G. Vandenberghe
IPC分类号： H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/7391
摘要： Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting material (e.g. germanium (Ge)) is used. An elongate monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the heterosection is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities.
摘要翻译：隧道场效应晶体管（TFET）被认为是金属氧化物半导体场效应晶体管（MOSFET）的后继者，但是硅基TFET通常具有低导通电流，这是与隧道势垒的大电阻相关的缺点。为了实现更高的导通电流，使用具有由不同半导体材料（例如锗（Ge））制成的异质结构的细长单晶纳米结构基TFET。引入由不同半导体材料制成的细长单晶纳米结构，其作为TFET的源（或者替代地，漏极）区域。杂交的引入使得硅与锗之间的晶格失配不会导致高度缺陷的界面。与常规MOSFET配置相比，可以实现动态功耗降低和静态功耗降低。因此可以用这些细长单晶纳米结构Si / Ge TFET来设想多层逻辑，从而产生超高的片上晶体管密度。

10. 发明授权

US07598482B1 Wavelength-sensitive detector with elongate nanostructures 有权
标题翻译：具有细长纳米结构的波长敏感检测器
公开(公告)号：US07598482B1
公开(公告)日：2009-10-06
申请号：US11475300
申请日：2006-06-26
申请人： Anne S. Verhulst , Wilfried Vandervorst
发明人： Anne S. Verhulst , Wilfried Vandervorst
IPC分类号： H01L31/00
CPC分类号： H01L31/0352 , H01L31/09 , Y10S977/954
摘要： A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.
摘要翻译：提供了一种基于细长纳米结构的波长敏感检测器，例如。纳米线细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极。添加电路以读取光电导体单元的电信号。每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

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