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1. 发明申请

US20140004465A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物和使用其形成电阻图案的方法
公开(公告)号：US20140004465A1
公开(公告)日：2014-01-02
申请号：US14003480
申请日：2012-03-08
申请人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
发明人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
IPC分类号： G03F7/09 , G03F7/38
CPC分类号： G03F7/09 , C08G59/1455 , C08G59/4223 , G03F7/11 , G03F7/38
摘要： A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
摘要翻译：用于光刻的抗蚀剂下层膜形成组合物包括：在聚合物链的末端包含下式（1）结构的聚合物; 交联剂; 促进交联反应的化合物; 和有机溶剂：（其中，R 1，R 2和R 3各自独立地为氢原子，碳原子数为1〜13的直链或支链烃基或羟基; R1，R2和 R3是烃基; m和n各自独立地为0或1;当n为1时，聚合物的主链与亚甲基结合，当n为0时，与-O - 表示的基团键合。

2. 发明授权

US09240327B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer 有权
标题翻译：用于含有缩聚物的EUV光刻的抗蚀下层成膜组合物
公开(公告)号：US09240327B2
公开(公告)日：2016-01-19
申请号：US14236719
申请日：2012-07-31
申请人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , Bangching Ho
发明人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , Bangching Ho
IPC分类号： G03F7/11 , H01L21/308 , H01L21/027 , C08G73/06 , G03F7/09
CPC分类号： H01L21/3081 , C08G73/06 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0274 , H01L21/3086
摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
摘要翻译：提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法用于EUV光刻的抗蚀剂下层膜组合物。一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

3. 发明申请

US20130209940A1 COMPOSITION FOR FORMING RESIST OVERLAYER FILM FOR EUV LITHOGRAPHY 审中-公开
标题翻译：用于形成抗紫外线膜的组合物用于EUV LITHOGRAPHY
公开(公告)号：US20130209940A1
公开(公告)日：2013-08-15
申请号：US13880470
申请日：2011-09-15
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： C09D5/00
CPC分类号： C09D5/00 , C08F12/24 , C08G8/08 , C08G8/24 , C08L61/06 , C09D161/06 , G03F7/091 , G03F7/11 , C08F212/32 , C08F212/14 , C08F220/06
摘要： There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.
摘要翻译：提供了用于形成EUV抗蚀剂覆盖膜的组合物，其用于EUV光刻工艺中，其不与EUV抗蚀剂混合，其阻挡用于EUV曝光的不利曝光光，例如UV光和DUV光，并选择性透射 EUV灯单独使用，并且可以在曝光后用显影剂开发。用于形成EUV抗蚀剂覆盖膜的组合物，其用于EUV光刻工艺，其包括在主链或侧链中含有萘环的树脂和溶剂，其中所述树脂可以包括羟基，羧基，或这些基团中的至少一个作为亲水基团的一价有机基团。

4. 发明授权

US11675269B2 Composition for forming resist overlayer film for EUV lithography 有权
公开(公告)号：US11675269B2
公开(公告)日：2023-06-13
申请号：US13880470
申请日：2011-09-15
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： G03F7/11 , C08L61/06 , C08G8/08 , C09D161/06 , G03F7/09 , C08G8/24 , C09D5/00 , C08F12/24 , C08F212/14
CPC分类号： G03F7/11 , C08G8/08 , C08G8/24 , C08L61/06 , C09D5/00 , C09D161/06 , G03F7/091 , C08F12/24 , C08F212/24 , C08F212/32 , C08F212/24 , C08F220/06
摘要： There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

5. 发明申请

US20130230809A1 RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物，以及使用其形成电阻图案的方法
公开(公告)号：US20130230809A1
公开(公告)日：2013-09-05
申请号：US13884132
申请日：2011-11-11
申请人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
发明人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
IPC分类号： G03F7/00 , C08L67/04
CPC分类号： G03F7/00 , C08L67/04 , G03F7/11
摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

6. 发明申请

US20110230058A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM WITH REDUCED OUTGASSING 审中-公开
标题翻译：用于形成抗降水膜的组合物
公开(公告)号：US20110230058A1
公开(公告)日：2011-09-22
申请号：US13131474
申请日：2009-11-19
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： H01L21/31 , G03F7/20 , C08G73/06 , C08F224/00 , C09D179/04 , C09D163/00
CPC分类号： G03F7/091 , G03F7/093
摘要： There is provided underlayer films of high-energy radiation resists that are applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation. A composition for forming an underlayer film of a high-energy radiation resist, the composition comprising a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained preferably in a film at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.
摘要翻译：在用于制造半导体器件的光刻工艺中提供施加到半导体衬底上的高能量辐射抗蚀剂的下层膜，其用于防止反射，静电带电和显影缺陷，并且在抗蚀剂层的曝光期间抑制除气高能辐射。一种用于形成高能量辐射抗蚀剂的下层膜的组合物，该组合物包含具有芳环结构或杂环结构的膜组分。具有芳环结构或杂环结构的膜组分优选以5-85质量％的比例包含在膜中。膜组分可以是具有芳环结构或杂环结构的化合物，并且该化合物可以是包含特定重复单元的聚合物或聚合物前体。芳环可以是苯环或稠合苯环，杂环结构可以是三嗪三酮环。

7. 发明申请

US20110059404A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND FORMING METHOD OF RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物和形成使用它的耐蚀图案的方法
公开(公告)号：US20110059404A1
公开(公告)日：2011-03-10
申请号：US12866831
申请日：2009-02-19
申请人： Rikimaru Sakamoto , Takafumi Endo
发明人： Rikimaru Sakamoto , Takafumi Endo
IPC分类号： G03F7/20 , G02F1/361
CPC分类号： G03F7/091 , C08G59/1455 , C08G63/20 , C08G63/42 , C08G63/668 , C08G63/6854
摘要： It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.
摘要翻译：本发明的目的是提供一种抗蚀剂下层膜形成组合物，其具有大的干蚀刻速率选择比，并且在诸如ArF准分子激光器的短波长处具有k值和n值，这两者都表现出期望的值。提供一种抗蚀剂下层膜形成组合物，其含有通过使至少具有脂环结构或脂肪族结构的四羧酸二酐和具有两个环氧基的二环氧化合物与含有具有OH基的醇系化合物的有机溶剂反应而获得的聚合物，和溶剂。

8. 发明授权

US10437150B2 Composition for forming resist underlayer film with reduced outgassing 有权
公开(公告)号：US10437150B2
公开(公告)日：2019-10-08
申请号：US13131474
申请日：2009-11-19
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： G03F7/09
摘要： Underlayer films of high-energy radiation resists applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation are prepared from compositions including a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.

9. 发明申请

US20140170567A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER 有权
标题翻译：用于含有凝聚聚合物的EUV光刻胶的膜下膜成膜组合物
公开(公告)号：US20140170567A1
公开(公告)日：2014-06-19
申请号：US14236719
申请日：2012-07-31
申请人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , Bangching Ho
发明人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , Bangching Ho
IPC分类号： H01L21/308
CPC分类号： H01L21/3081 , C08G73/06 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0274 , H01L21/3086
摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
摘要翻译：提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法用于EUV光刻的抗蚀剂下层膜组合物。一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

10. 发明授权

US08722840B2 Resist underlayer film forming composition, and method for forming resist pattern using the same 有权
标题翻译：抗蚀剂下层膜形成组合物，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US08722840B2
公开(公告)日：2014-05-13
申请号：US13884132
申请日：2011-11-11
申请人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
发明人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
IPC分类号： G03F7/11 , C08L67/04
CPC分类号： G03F7/00 , C08L67/04 , G03F7/11
摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

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