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1. 发明申请

US20120256231A1 LOW VOLTAGE PNPN PROTECTION DEVICE 有权
标题翻译：低电压PNPN保护装置
公开(公告)号：US20120256231A1
公开(公告)日：2012-10-11
申请号：US13164690
申请日：2011-06-20
申请人： Richard Rodrigues , Johnny Chen , Ethan Kuo
发明人： Richard Rodrigues , Johnny Chen , Ethan Kuo
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L29/0661 , H01L29/0692 , H01L29/66121 , H01L29/861
摘要： A low voltage protection device that includes a silicon substrate comprises an inner layer of a first dopant type. The device also includes a first outer layer of a second dopant type disposed adjacent a first surface of the inner layer and a second outer layer of the second dopant type disposed adjacent a second surface of the inner layer opposite the first surface. The device further includes a first mesa region disposed in a peripheral region of a first side of the low voltage protection device. The first mesa region includes a first area that includes a peripheral portion of a cathode of the low voltage protection device, the cathode formed by diffusing a high concentration of dopant species of the first type on a first surface of the silicon substrate, and a second area comprising a high concentration of diffused dopant species of the second type.
摘要翻译：包括硅衬底的低电压保护器件包括第一掺杂剂类型的内层。该装置还包括邻近内层的第一表面设置的第二掺杂剂类型的第一外层和邻近内层的与第一表面相对的第二表面设置的第二掺杂剂类型的第二外层。该装置还包括设置在低压保护装置的第一侧的周边区域中的第一台面区域。第一台面区域包括第一区域，其包括低压保护装置的阴极的周边部分，阴极通过在硅衬底的第一表面上扩散高浓度的第一类型的掺杂物质形成;以及第二区域区域包括第二类型的高浓度扩散掺杂物种类。

2. 发明授权

US08384126B2 Low voltage PNPN protection device 有权
标题翻译：低压PNPN保护装置
公开(公告)号：US08384126B2
公开(公告)日：2013-02-26
申请号：US13164690
申请日：2011-06-20
申请人： Richard Rodrigues , Johnny Chen , Ethan Kuo
发明人： Richard Rodrigues , Johnny Chen , Ethan Kuo
IPC分类号： H01L29/74
CPC分类号： H01L29/0661 , H01L29/0692 , H01L29/66121 , H01L29/861
摘要： A low voltage protection device that includes a silicon substrate comprises an inner layer of a first dopant type. The device also includes a first outer layer of a second dopant type disposed adjacent a first surface of the inner layer and a second outer layer of the second dopant type disposed adjacent a second surface of the inner layer opposite the first surface. The device further includes a first mesa region disposed in a peripheral region of a first side of the low voltage protection device. The first mesa region includes a first area that includes a peripheral portion of a cathode of the low voltage protection device, the cathode formed by diffusing a high concentration of dopant species of the first type on a first surface of the silicon substrate, and a second area comprising a high concentration of diffused dopant species of the second type.
摘要翻译：包括硅衬底的低电压保护器件包括第一掺杂剂类型的内层。该装置还包括邻近内层的第一表面设置的第二掺杂剂类型的第一外层和邻近内层的与第一表面相对的第二表面设置的第二掺杂剂类型的第二外层。该装置还包括设置在低压保护装置的第一侧的周边区域中的第一台面区域。第一台面区域包括第一区域，其包括低压保护装置的阴极的周边部分，阴极通过在硅衬底的第一表面上扩散高浓度的第一类型的掺杂物质形成;以及第二区域区域包括第二类型的高浓度扩散掺杂物种类。

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